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    THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS
    1.
    发明申请
    THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS 有权
    用于改进间断接触点和用于填充半导体金属氧化物颗粒层中的相互作用的热可塑前体化合物

    公开(公告)号：US20120086002A1

    公开(公告)日：2012-04-12

    申请号：US13378765

    申请日：2010-06-15

    申请人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L29/22 ,  H01L21/20

    CPC分类号： H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:(A) applying a porous layer of at least one semiconductive metal oxide to a substrate,(B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and(C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide,wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。

    Process for producing semiconductive layers
    2.
    发明授权
    Process for producing semiconductive layers 有权
    生产半导体层的工艺

    公开(公告)号：US08877657B2

    公开(公告)日：2014-11-04

    申请号：US13266935

    申请日：2010-04-26

    申请人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L21/31 ,  H01L29/786 ,  C23C18/12 ,  H01L21/02 ,  H01L29/66

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。

    PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS
    3.
    发明申请
    PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS 有权
    生产半导体层的工艺

    公开(公告)号：US20120043537A1

    公开(公告)日：2012-02-23

    申请号：US13266935

    申请日：2010-04-26

    申请人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Andrey Karpov ,  Friederike Fleischhaker ,  Imme Domke ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L29/22 ,  H01L21/16 ,  C01B21/00

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。

    Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers
    4.
    发明授权
    Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers 有权
    用于改善晶间接触部位并填充半导体金属氧化物颗粒层间隙的热不稳定前体化合物

    公开(公告)号：US09129801B2

    公开(公告)日：2015-09-08

    申请号：US13378765

    申请日：2010-06-15

    申请人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/02 ,  H01L29/10 ,  H01L29/12

    CPC分类号： H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。

    Method and device for fabricating insulated joints for railroad tracks
    8.
    发明授权
    Method and device for fabricating insulated joints for railroad tracks 失效
    铁轨用绝缘接头的方法和装置

    公开(公告)号：US4464831A

    公开(公告)日：1984-08-14

    申请号：US347420

    申请日：1982-02-10

    申请人： Lothar Weber ,  Friedhelm Wojtek ,  Horst Schwarzbach

    发明人： Lothar Weber ,  Friedhelm Wojtek ,  Horst Schwarzbach

    IPC分类号： E01B11/44 ,  E01B11/54 ,  E01B29/24 ,  E01B31/18 ,  H01R43/00 ,  B23P19/00

    CPC分类号： E01B11/44 ,  E01B11/54 ,  E01B29/24 ,  E01B31/18 ,  Y10T29/49117 ,  Y10T29/532

    摘要： A method of fabricating an insulating joint between a pair of end abutting rail sections of a railroad track includes the suspension of a pair of opposed fishplates at the rail joint at spaced distances outwardly of the rail sides, and simultaneously heating the rail sections and the fishplates to a predetermined temperature for activating a heat-activatable adhesive provided in fabric cuffs which are disposed between the fish surfaces and the fishplates. The fishplates are shifted along guide rods of their support assemblies inwardly toward one another into place against opposed fish surfaces of the rail sections, and are thereafter bolted in place. A device for fabricating the joint includes a box-like hood on which heaters are mounted, or a shear assembly supporting the heaters and being clamped onto the rail head. The heaters may be adjusted to accommodate various rail profiles.

    摘要翻译： 一种在铁路轨道的一对端部邻接轨道部分之间制造绝缘接头的方法包括一对相对的鱼板在轨道接头处的间隔距离在轨道侧的间隔处的悬挂，同时加热轨道部分和鱼板 达到预定温度，用于激活设置在鱼面和鱼板之间的织物袖口中提供的可热激活的粘合剂。 鱼板沿其支撑组件的导杆朝向彼此向内彼此移动到位于轨道部分的相对的鱼表面上的位置，并且此后被螺栓固定就位。 用于制造接头的装置包括：其上安装有加热器的箱状罩，或支撑加热器并夹紧在轨头上的剪切组件。 可以调节加热器以适应各种轨道轮廓。

    Oxygen content exhaust gas sensor, and method of its manufacture
    9.
    发明授权
    Oxygen content exhaust gas sensor, and method of its manufacture 失效
    含氧废气传感器及其制造方法

    公开(公告)号：US4347113A

    公开(公告)日：1982-08-31

    申请号：US133811

    申请日：1980-03-25

    申请人： Hermann Fischer ,  Karl-Hermann Friese ,  Hans-Ulrich Gruber ,  Wolfgang Heinemann ,  Gunter Knoll ,  Ernst Linder ,  Helmut Maurer ,  Rainer Noack ,  Leo Steinke ,  Lothar Weber ,  Helmut Weyl

    发明人： Hermann Fischer ,  Karl-Hermann Friese ,  Hans-Ulrich Gruber ,  Wolfgang Heinemann ,  Gunter Knoll ,  Ernst Linder ,  Helmut Maurer ,  Rainer Noack ,  Leo Steinke ,  Lothar Weber ,  Helmut Weyl

    IPC分类号： G01N27/409 ,  G01N27/407 ,  G01N27/413 ,  H01M4/88 ,  H01M8/12 ,  G01N27/58

    CPC分类号： G01N27/4075 ,  G01N27/4078 ,  H01M4/881 ,  H01M4/8885 ,  H01M4/9066 ,  H01M8/1213 ,  H01M4/905 ,  Y02P70/56

    摘要： To improve operation and output voltage, particularly at 400.degree. C. and less, an oxygen sensor, especially adapted to determine oxygen content of automotive exhaust gases, is constructed by utilizing two electrodes applied on a body of stabilized zirconium dioxide, for example a closed tube, by making an electrode exposed to the exhaust gases in form of a mixture of finely dispersed ceramic material and a platinum-rhodium alloy, the ceramic material being present at about 40% (by volume) and 60% (by volume) platinum-rhodium alloy of 50-94% platinum and 50-6% rhodium (by weight). The second electrode, exposed to a reference gas comprises an alloy of palladium and another noble metal in a ratio of about 19-90% (by weight) Pd and 81-10% (by weight) noble metal. This electrode may also contain up to 40% (by volume) finely dispersed ceramic material. The electrode exposed to the exhaust gases is covered with a porous coating. The electrodes can be applied as aqueous or organic solutions of soluble noble metal compounds or suspensions, colloidal suspensions, with organic solvents, and the like, and subsequent sintering.

    摘要翻译： 为了提高操作和输出电压，特别是在400℃以下，特别适用于测定汽车废气氧含量的氧气传感器是通过利用施加在稳定二氧化锆体上的两个电极构成的，例如封闭的 通过使电极以细分散的陶瓷材料和铂 - 铑合金的混合物的形式暴露于废气，陶瓷材料以约40％（体积）和60％（体积）的铂 - 铑合金为50-94％铂和50-6％铑（重量）。 暴露于参考气体的第二电极包括钯和另一贵金属的合金，其比例为约19-90％（重量）的Pd和81-10％（重量）的贵金属。 该电极还可以含有高达40％（体积）的细分散的陶瓷材料。 暴露于废气的电极被多孔涂层覆盖。 电极可以作为可溶性贵金属化合物或悬浮液，胶体悬浮液，有机溶剂等的水溶液或有机溶液，以及随后的烧结。

    DEVICE AND METHOD FOR CONNECTING IN A SWITCHABLE MANNER
    10.
    发明申请
    DEVICE AND METHOD FOR CONNECTING IN A SWITCHABLE MANNER 审中-公开
    用于连接可切换的手机的装置和方法

    公开(公告)号：US20150158058A1

    公开(公告)日：2015-06-11

    申请号：US14359384

    申请日：2012-11-20

    申请人： Michael Saier ,  Lothar Weber

    发明人： Michael Saier ,  Lothar Weber

    IPC分类号： B08B9/032 ,  F16K11/085

    摘要： The invention relates, among other items, to a device (10) with a plurality of inlets (27a, 27b, 27c, 27d, 27e, 27f) and one outlet (19), wherein each of the inlets (27a, 27b, 27c, 27d, 27e, 27f) can be connected to a material supply container (13a, 13b, 13c, 13d, 13e, 13f). An actuator (12) that can be displaced relative to the inlets and has a through-channel (42) is furnished in order to provide a switchable connection between one of the plurality of inlets and the outlet. A communicative connection can be created between the through-channel and one of the various inlets in order to allow various materials to be successively supplied to the outlet. One of the characteristic features is that at least one of the inlets (28) is designed as a flushing medium inlet of a flushing device (47) and that, as a result of the actuator (12) being displaced, a communicative connection can be created between the through-channel (42) and the flushing medium inlet for the purposes of flushing the through channel.

    摘要翻译： 本发明还涉及具有多个入口（27a，27b，27c，27d，27e，27f）和一个出口（19）的装置（10），其中每个入口（27a，27b，27c ，27d，27e，27f）可以连接到材料供给容器（13a，13b，13c，13d，13e，13f）。 为了在多个入口中的一个和出口之间提供可切换的连接，可以相对于入口移动并具有通道（42）的致动器（12）被设置。 可以在通道和各种入口之一之间形成交流连接，以便允许将各种材料依次提供给出口。 其中一个特征是入口（28）中的至少一个被设计为冲洗装置（47）的冲洗介质入口，并且由于致动器（12）的移动，通信连接可以是 在通道（42）和冲洗介质入口之间产生用于冲洗通道的目的。