摘要:
The present invention is directed to a photothermographic element comprising at least one imaging layer with a pyrrolotriazole coupler and a developing agent, or precursor thereof, the combination of which is capable of forming an image record in the infrared region of the light spectrum in response to a selected hue of visible light. This expedient leads to the formation of high quality images, especially when scanning photothermographic elements in which the silver halide, metallic silver, and/or any organic silver salts have not been removed. Also disclosed is a method for photothermographically forming a developed image comprising an infrared image record.
摘要:
This invention relates to a photothermographic color element containing a mixture of blocked developers in the same emulsion layers. By having different blocked developers or mixtures of at least two blocked developers in different color layers, it is possible to manipulate the image discrimination (at the processing temperature) in each layer and to balance the density formation or color in the different color layers. Different mixtures of blocked developers can be used in different imaging layers, to balance the Gamma, the Dmin and the Latitude in different imaging layers or color units.
摘要:
The present invention is directed to a method of scanning silver-halide-containing color photographic and photothermographic film. In particular, the present invention comprises a photographic element comprising at least one infrared imaging dye-forming agent in a blue-sensitive color layer of the element, thereby forming at least one image record in the infrared region of the imagewise exposed and developed element. This expedient leads to the formation of high quality images when scanning photographic elements in which the silver halide, metallic silver, and/or any organic silver salts have not been removed.
摘要:
This invention relates to an imaging element comprising an imaging layer having associated therewith a compound of Structure I: wherein PUG is a residue of removing a hydrogen from wherein X, Y, and Z represent substituents selected independently from the groups hydrogen, alkyl group of 1 to 6 carbon atoms, cyclopropyl, aryl, arylalkyl, and heterocyclic groups, wherein at least one of X, Y, and Z is an aryl group and one of X, Y, Z, which may or may not be an aryl group, is attached in the direction of the backbone, and the other substituents are as defined in the specification. Such compounds have good reactivity and can by used to block photographically useful compounds such as developing agents until thermally activated under preselected conditions. Compounds according to the present invention are especially useful in color photothermographic imaging elements.
摘要:
Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.
摘要:
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要:
A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer has a second pattern. A semiconductor layer is in contact with and has the same pattern as the second inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
摘要:
A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.
摘要:
Producing a vertical transistor includes providing a substrate including a gate material layer stack with a reentrant profile. A patterned deposition inhibiting material is deposited over a portion of the gate material layer stack and over a portion of the substrate. An electrically insulating material layer is deposited over a portion of the gate material layer stack and over a portion of the substrate using a selective area deposition process in which the electrically insulating material layer is not deposited over the patterned deposition inhibiting material. A semiconductor material layer is deposited over the electrically insulating material layer.
摘要:
A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.