公开(公告)号：US20070182284A1

公开(公告)日：2007-08-09

申请号：US11731942

申请日：2007-04-02

Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

IPC: H01L41/04

CPC classification number: H03H9/175

Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

Abstract translation: 声谐振器组件包括高声阻抗材料层和由低电容率材料制成的低声阻抗材料层。 该组件可以在互连层上支撑谐振器或者用作谐振器的两个有源元件之间的去耦组件。 组件可以替代地包括三个低声阻抗层。 或者，组件可以包括三个声阻抗层，其中两个层是低声阻抗层，并且第三层具有比前两个更高的声阻抗，或者备选地是高声阻抗层。

公开(公告)号：US20070087513A1

公开(公告)日：2007-04-19

申请号：US11512731

申请日：2006-08-30

Applicant: Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

Inventor： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

IPC: H01L21/76 ,  H01L21/20

CPC classification number: H01G5/16 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T83/0476 ,  Y10T83/0505 ,  Y10T83/051 ,  Y10T83/0577

Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

Abstract translation: 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。

公开(公告)号：US20050199970A1

公开(公告)日：2005-09-15

申请号：US10895616

申请日：2004-07-21

Applicant: Stephane Monfray ,  Pascal Ancey ,  Thomas Skotnicki ,  Karim Segueni

Inventor： Stephane Monfray ,  Pascal Ancey ,  Thomas Skotnicki ,  Karim Segueni

IPC: B81B3/00 ,  H03H9/24 ,  H01L27/14

CPC classification number: H03H9/2405 ,  H03H2009/02511

Abstract: An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).

Abstract translation: 机电谐振器包括设置有由绝缘区限定的有源区（ZA）的单晶硅衬底（S），由绝缘区上的至少一个自由端锚定的振动束（10），并且包括单晶硅衬底 硅振动中心部分（12）和布置在梁的上方并且承载在活动区上的控制电极（E）。 光束的中心部分（12）与有源区（ZA）和控制电极（E）分离。

公开(公告)号：US20050168104A1

公开(公告)日：2005-08-04

申请号：US11009688

申请日：2004-12-10

Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

IPC: H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H01L41/08

CPC classification number: H03H9/587 ,  H03H9/564

Abstract: Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.

Abstract translation: 声谐振器装置（1）包括有源元件（6）和具有膜（5）的支撑件。 有源元件（6）设置有至少一个压电层（10），并被多层叠层（12）所覆盖。 多层堆叠（12）设置有至少三层，包括至少一层高声阻抗层（15）和至少一层低声阻抗层（13）。 还公开了包括至少一个这样的声谐振器装置的集成电路。

公开(公告)号：US20120313874A1

公开(公告)日：2012-12-13

申请号：US13490347

申请日：2012-06-06

Applicant: Cedrick Chappaz ,  Pascal Ancey ,  Yves Gilot ,  Serge Laffont ,  Olivier Girard

Inventor： Cedrick Chappaz ,  Pascal Ancey ,  Yves Gilot ,  Serge Laffont ,  Olivier Girard

IPC: G06F3/041 ,  H01L41/22 ,  H05K3/42 ,  G08B6/00 ,  H05K3/30

CPC classification number: G06F3/041 ,  G06F3/016 ,  G08B6/00 ,  H01L41/0805 ,  H01L41/318 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.

Abstract translation: 本发明涉及一种制造振动元件的方法，包括通过集成电路制造方法在基板上形成多层结构，所述多层结构包括当受到电信号时易于振动的元件，以及用于传输电气的电极 信号到振动元件，振动元件包括机械耦合面，其能够传递到用户可感知的控制元件振动。

公开(公告)号：US08159109B2

公开(公告)日：2012-04-17

申请号：US12850126

申请日：2010-08-04

Applicant: Nicolas Abelé ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stéphane Monfray ,  Fabrice Casset

Inventor： Nicolas Abelé ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stéphane Monfray ,  Fabrice Casset

IPC: H01L21/00

CPC classification number: H03H9/2405 ,  H03H3/0072 ,  H03H2009/02496

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract translation: 一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中 并在开幕式的水平。

公开(公告)号：US20120074527A1

公开(公告)日：2012-03-29

申请号：US13230035

申请日：2011-09-12

Applicant: Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laúrent-Lüc Chapelon ,  Yacine Felk ,  Pascal Ancey

Inventor： Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laúrent-Lüc Chapelon ,  Yacine Felk ,  Pascal Ancey

IPC: H01L29/06 ,  H01L21/283

CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2203/0353 ,  B81B2207/012 ,  B81C1/005 ,  G01P15/125 ,  G01P2015/082 ,  H01L2924/0002 ,  H03H3/0073 ,  H03H9/2426 ,  H01L2924/00

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract translation: 集成电路包括具有相对的第一和第二主表面的支撑基板。 空腔通过支撑基板并连接第一和第二主表面。 集成电路包括具有移动元件的装置，移动元件和一对相关联的电极包括在空腔中。 移动元件的锚定节点位于第一主表面的水平面上。 集成电路包括布置在第一主表面的电平处的第一基本芯片，并与移动元件电连接到该装置。

公开(公告)号：US07960900B2

公开(公告)日：2011-06-14

申请号：US11629586

申请日：2005-06-13

Applicant: Grégory Caruyer ,  Guillaume Bouche ,  Pascal Ancey

Inventor： Grégory Caruyer ,  Guillaume Bouche ,  Pascal Ancey

IPC: H01L41/08

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0315 ,  B81B2203/04 ,  H01H57/00 ,  H01H2057/006 ,  H03H9/172 ,  H03H2009/241 ,  Y10T29/49105

Abstract: The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.

Abstract translation: 本发明涉及由包括移动光束（2）的机电微型开关组成的装置。 根据本发明，梁的至少一部分（14）形成压电致动器的压电元件。

公开(公告)号：US20100295416A1

公开(公告)日：2010-11-25

申请号：US12850126

申请日：2010-08-04

Applicant: Nicolas Abelé ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stéphane Monfray ,  Fabrice Casset

Inventor： Nicolas Abelé ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stéphane Monfray ,  Fabrice Casset

IPC: H02N1/08

CPC classification number: H03H9/2405 ,  H03H3/0072 ,  H03H2009/02496

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract translation: 一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中 并在开幕式的水平。

公开(公告)号：US07804383B2

公开(公告)日：2010-09-28

申请号：US11845268

申请日：2007-08-27

Applicant: Alexandre Volatier ,  Pascal Ancey ,  Bertrand Dubus

Inventor： Alexandre Volatier ,  Pascal Ancey ,  Bertrand Dubus

IPC: H03H9/54 ,  H03H9/56

CPC classification number: H03H9/02228 ,  Y10T29/42

Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.

Abstract translation: 耦合兰姆波谐振滤波器包括第一和第二兰姆波谐振器。 第一兰姆波谐振器包括第一谐振层，以及在第一谐振层的相对侧上的第一和第二电极。 第二兰姆波谐振器包括第二谐振层，第二谐振层的相对侧上的第三和第四电极。 第一共振层的一个侧面属于平行于与第二共振层的一个侧面相对应的平面的平面。 两个平面通过第二兰姆波谐振器的第三和第四电极。 周期性晶格声耦合第一和第二谐振层。