Acoustic wave device, transmission apparatus, and acoustic wave device manufacturing method
    31.
    发明授权
    Acoustic wave device, transmission apparatus, and acoustic wave device manufacturing method 有权
    声波装置,传输装置和声波装置的制造方法

    公开(公告)号:US08354896B2

    公开(公告)日:2013-01-15

    申请号:US12511162

    申请日:2009-07-29

    IPC分类号: H03H9/00 H01L41/08

    CPC分类号: H03H9/0222 H03H3/08 Y10T29/42

    摘要: An acoustic wave device includes a plurality of acoustic wave devices each including a substrate made of a piezoelectric material, a pair of interdigital electrodes formed on the substrate, each of the interdigital electrodes including a plurality of electrode fingers, and an adjustment medium. The adjustment medium includes at least a single layer and is formed on at least a part of the pair of the interdigital electrodes. The adjustment medium further includes at least one thick portion and a thin portion, the thin portion being null or thinner than the thick portion, a total area of the at least one thick portion in a region covering the pair of interdigital electrodes being determined according to a predetermined characteristic value, wherein the plurality of acoustic wave devices include at least two acoustic wave devices that differ from each other with respect to the size of the total area of the at least one thick portion of the adjustment medium.

    摘要翻译: 声波装置包括多个声波装置,每个声波装置包括由压电材料制成的基板,形成在基板上的一对叉指电极,每个叉指电极包括多个电极指和调节介质。 调节介质至少包括单层,并且形成在该对叉指电极的至少一部分上。 所述调整介质还包括至少一个厚部分和薄部分,所述薄部分比所述厚部分零或更薄,覆盖所述一对叉指电极的区域中的所述至少一个厚部分的总面积根据 预定特性值,其中所述多个声波装置包括至少两个声波装置,所述至少两个声波装置相对于所述调节介质的所述至少一个较厚部分的总面积的大小彼此不同。

    ELASTIC BOUNDARY WAVE DEVICE
    32.
    发明申请
    ELASTIC BOUNDARY WAVE DEVICE 有权
    弹性边界波装置

    公开(公告)号:US20100141088A1

    公开(公告)日:2010-06-10

    申请号:US12705565

    申请日:2010-02-12

    IPC分类号: H01L41/04

    摘要: An elastic boundary wave device of the present invention includes a plurality of elastic boundary wave elements. The elastic boundary wave elements each include a piezoelectric material layer, an electrode disposed over the piezoelectric material layer, a first dielectric layer formed over the piezoelectric material layer so as to cover the electrode, and a second dielectric layer formed over the first dielectric layer. An acoustic velocity of the second dielectric layers is faster than an acoustic velocity of the first dielectric layers, and the acoustic velocity of the second dielectric layer of at least one elastic boundary wave element from among the plurality of elastic boundary wave elements is different from the acoustic velocity of the second dielectric layer of another of the elastic boundary wave elements. This enables improving the degree of suppression in use as a filter in the elastic boundary wave device.

    摘要翻译: 本发明的弹性边界波装置包括多个弹性边界波元件。 弹性边界波元件各自包括压电材料层,设置在压电材料层上的电极,形成在压电材料层上以覆盖电极的第一电介质层,以及形成在第一介电层上的第二电介质层。 第二电介质层的声速比第一电介质层的声速更快,并且多个弹性边界波元件中的至少一个弹性边界波元件的第二电介质层的声速不同于 另一弹性边界波元件的第二电介质层的声速。 由此,能够提高弹性边界波装置中的滤波器的使用抑制度。

    BOUNDARY ACOUSTIC WAVE DEVICE AND COMMUNICATION EQUIPMENT
    33.
    发明申请
    BOUNDARY ACOUSTIC WAVE DEVICE AND COMMUNICATION EQUIPMENT 有权
    边界声波设备和通信设备

    公开(公告)号:US20110204994A1

    公开(公告)日:2011-08-25

    申请号:US12711965

    申请日:2010-02-24

    IPC分类号: H03H9/72 H01L41/04 H03H9/64

    摘要: A boundary acoustic waves device includes a piezoelectric substrate (16) having piezoelectricity, interdigitated electrodes (14a, 14b) formed on the piezoelectric substrate, a first medium (17) formed on the piezoelectric substrate so as to cover the interdigitated electrode, and a second medium (18) formed on the first medium. The interdigitated electrodes include a plurality of electrode fingers (13a, 13b) and bus bars (12a, 12b) that connect ends of the plurality of electrode fingers. A third medium (19a) is formed on the first medium. The second medium and the third medium are in contact with the first medium. The first medium, the second medium, and the third medium are formed of different materials. The first medium, the second medium, and the third medium are different in a ratio in length of a part with the third medium formed with respect to a length of a propagation path of boundary acoustic waves in a cross-section perpendicular to a longitudinal direction of the electrode fingers, in the longitudinal direction of the electrode fingers.

    摘要翻译: 声界面波装置包括具有压电性的压电基板(16),形成在压电基板上的交错电极(14a,14b),形成在压电基板上以覆盖交叉指状电极的第一介质(17) 介质(18)形成在第一介质上。 交叉电极包括连接多个电极指的端部的多个电极指(13a,13b)和母线(12a,12b)。 在第一介质上形成第三介质(19a)。 第二介质和第三介质与第一介质接触。 第一介质,第二介质和第三介质由不同的材料形成。 第一介质,第二介质和第三介质在与纵向方向垂直的截面中相对于边界声波的传播路径的长度形成的部分的长度的比例不同 的电极指的长度方向。

    ACOUSTIC WAVE DEVICE AND METHOD OF PRODUCING THE SAME
    34.
    发明申请
    ACOUSTIC WAVE DEVICE AND METHOD OF PRODUCING THE SAME 有权
    声波装置及其制造方法

    公开(公告)号:US20100244624A1

    公开(公告)日:2010-09-30

    申请号:US12647071

    申请日:2009-12-24

    摘要: A method of producing an acoustic wave device includes: forming an interdigital electrode 3 on a piezoelectric substrate 2; forming a barrier film 4 so as to cover the interdigital electrode 3; forming a medium 5 on the barrier film 4; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode 3; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film 4 or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.

    摘要翻译: 制造声波器件的方法包括:在压电基片2上形成叉指电极3; 形成阻挡膜4以覆盖叉指电极3; 在阻挡膜4上形成介质5; 测量由叉指电极3激发的声波的频率特性; 以及通过对阻挡膜4进行图案化或进一步提供调整膜,在激励区域中形成具有与其它部分不同的厚度的调节区域。 在形成调整区域时,根据测定的频率特性调整调整区域的面积T.

    Method and manufacturing surface acoustic wave device
    35.
    发明授权
    Method and manufacturing surface acoustic wave device 有权
    表面声波装置的制造方法

    公开(公告)号:US07331092B2

    公开(公告)日:2008-02-19

    申请号:US10806148

    申请日:2004-03-23

    IPC分类号: H04R17/10

    摘要: A method of manufacturing a surface acoustic device that has a surface acoustic wave filter including comb-like electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate and a supporting substrate to each other. This method includes the steps of: activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face each other.

    摘要翻译: 一种表面声学装置的制造方法,其具有包括梳状电极,电极焊盘和布线图案的表面声波滤波器,所述梳状电极,电极焊盘和布线图案形成在通过将压电基板和支撑基板彼此接合而制成的接合基板上。 该方法包括以下步骤:激活压电衬底和支撑衬底的至少一个接合表面; 以及使活化的接合面彼此面对的方式接合压电基板和支撑基板。

    Surface acoustic wave device with lithium tantalate on a sapphire substrate and filter using the same
    36.
    发明授权
    Surface acoustic wave device with lithium tantalate on a sapphire substrate and filter using the same 失效
    在蓝宝石衬底上使用钽酸锂的表面声波器件和使用其的滤波器

    公开(公告)号:US06933810B2

    公开(公告)日:2005-08-23

    申请号:US10724577

    申请日:2003-12-01

    CPC分类号: H03H9/02834 H03H9/02559

    摘要: A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes are formed, and a second surface, and a support substrate joined to the second surface of the piezoelectric substrate. The piezoelectric substrate is made of lithium, tantalate, and the support substrate is made of sapphire. The following expressions being satisfied: T/t 10  (2) where T is a thickness of the piezoelectric substrate, t is a thickness of the support substrate, and λ is a wavelength of a surface acoustic filter, propagated along the first surface of the piezoelectric substrate.

    摘要翻译: 表面声波装置包括具有形成有梳状电极的第一表面和第二表面的压电基板和连接到压电基板的第二表面的支撑基板。 压电基板由钽酸锂制成,支撑基板由蓝宝石制成。 满足以下表达式:<?in-line-formula description =“In-line Formulas”end =“lead”?> T / t <1/3(1)<?in-line-formula description =“In- 行公式“end =”tail“?> <?in-line-formula description =”In-line Formulas“end =”lead“?> T / lambda> 10(2)<?in-line-formula description = 在线公式“end =”tail“?>其中T是压电基板的厚度,t是支撑基板的厚度,λ是表面声滤波器的波长,沿着压电的第一表面传播 基质。

    Surface acoustic wave device and method of manufacturing the same
    37.
    发明授权
    Surface acoustic wave device and method of manufacturing the same 有权
    表面声波装置及其制造方法

    公开(公告)号:US07202590B2

    公开(公告)日:2007-04-10

    申请号:US10840632

    申请日:2004-05-07

    IPC分类号: H03H9/25

    摘要: A surface acoustic wave device includes: a piezoelectric substrate that has two or more resonators formed on a surface; and a supporting substrate that is joined to another surface of the piezoelectric substrate. In this surface acoustic wave device, at least two of the resonators have exciting portions that overlap each other in the direction of propagating surface acoustic waves, and at least a part of the piezoelectric substrate is removed or modified to have different properties between at least one pair of overlapping resonators among the resonators having the overlapping portions.

    摘要翻译: 表面声波装置包括:压电基板,其在表面上形成有两个以上的谐振器; 以及与压电基板的另一表面接合的支撑基板。 在该声表面波装置中,至少两个谐振器具有在传播表面声波的方向上彼此重叠的激励部分,并且压电基板的至少一部分被去除或修改为在至少一个 具有重叠部分的谐振器中的一对重叠谐振器。

    Bonded substrate, surface acoustic wave chip, and surface acoustic wave device
    39.
    发明授权
    Bonded substrate, surface acoustic wave chip, and surface acoustic wave device 有权
    粘结基板,表面声波芯片和表面声波装置

    公开(公告)号:US07208859B2

    公开(公告)日:2007-04-24

    申请号:US11069048

    申请日:2005-03-02

    IPC分类号: H03H9/25 H01L41/053

    摘要: A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.

    摘要翻译: 键合衬底包括钽酸锂衬底和键合有钽酸锂衬底的蓝宝石衬底,钽酸锂和蓝宝石衬底的键合界面包括厚度为0.3nm至2.5nm的非晶状态的接合区域。 无定形状态的键合区域是通过使中和的原子束,离子束或惰性气体或氧气的等离子体在键合界面上活化至少一种钽酸锂基板和蓝宝石基板而形成的。 可以将压电基板与不具有高温热处理的不同晶格常数的支撑基板结合,实现具有优异的接合强度且翘曲变小的接合基板。