摘要:
An acoustic wave device includes a plurality of acoustic wave devices each including a substrate made of a piezoelectric material, a pair of interdigital electrodes formed on the substrate, each of the interdigital electrodes including a plurality of electrode fingers, and an adjustment medium. The adjustment medium includes at least a single layer and is formed on at least a part of the pair of the interdigital electrodes. The adjustment medium further includes at least one thick portion and a thin portion, the thin portion being null or thinner than the thick portion, a total area of the at least one thick portion in a region covering the pair of interdigital electrodes being determined according to a predetermined characteristic value, wherein the plurality of acoustic wave devices include at least two acoustic wave devices that differ from each other with respect to the size of the total area of the at least one thick portion of the adjustment medium.
摘要:
An elastic boundary wave device of the present invention includes a plurality of elastic boundary wave elements. The elastic boundary wave elements each include a piezoelectric material layer, an electrode disposed over the piezoelectric material layer, a first dielectric layer formed over the piezoelectric material layer so as to cover the electrode, and a second dielectric layer formed over the first dielectric layer. An acoustic velocity of the second dielectric layers is faster than an acoustic velocity of the first dielectric layers, and the acoustic velocity of the second dielectric layer of at least one elastic boundary wave element from among the plurality of elastic boundary wave elements is different from the acoustic velocity of the second dielectric layer of another of the elastic boundary wave elements. This enables improving the degree of suppression in use as a filter in the elastic boundary wave device.
摘要:
A boundary acoustic waves device includes a piezoelectric substrate (16) having piezoelectricity, interdigitated electrodes (14a, 14b) formed on the piezoelectric substrate, a first medium (17) formed on the piezoelectric substrate so as to cover the interdigitated electrode, and a second medium (18) formed on the first medium. The interdigitated electrodes include a plurality of electrode fingers (13a, 13b) and bus bars (12a, 12b) that connect ends of the plurality of electrode fingers. A third medium (19a) is formed on the first medium. The second medium and the third medium are in contact with the first medium. The first medium, the second medium, and the third medium are formed of different materials. The first medium, the second medium, and the third medium are different in a ratio in length of a part with the third medium formed with respect to a length of a propagation path of boundary acoustic waves in a cross-section perpendicular to a longitudinal direction of the electrode fingers, in the longitudinal direction of the electrode fingers.
摘要:
A method of producing an acoustic wave device includes: forming an interdigital electrode 3 on a piezoelectric substrate 2; forming a barrier film 4 so as to cover the interdigital electrode 3; forming a medium 5 on the barrier film 4; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode 3; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film 4 or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.
摘要:
A method of manufacturing a surface acoustic device that has a surface acoustic wave filter including comb-like electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate and a supporting substrate to each other. This method includes the steps of: activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face each other.
摘要:
A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes are formed, and a second surface, and a support substrate joined to the second surface of the piezoelectric substrate. The piezoelectric substrate is made of lithium, tantalate, and the support substrate is made of sapphire. The following expressions being satisfied: T/t 10 (2) where T is a thickness of the piezoelectric substrate, t is a thickness of the support substrate, and λ is a wavelength of a surface acoustic filter, propagated along the first surface of the piezoelectric substrate.
摘要翻译:表面声波装置包括具有形成有梳状电极的第一表面和第二表面的压电基板和连接到压电基板的第二表面的支撑基板。 压电基板由钽酸锂制成,支撑基板由蓝宝石制成。 满足以下表达式:<?in-line-formula description =“In-line Formulas”end =“lead”?> T / t <1/3(1)<?in-line-formula description =“In- 行公式“end =”tail“?> <?in-line-formula description =”In-line Formulas“end =”lead“?> T / lambda> 10(2)<?in-line-formula description = 在线公式“end =”tail“?>其中T是压电基板的厚度,t是支撑基板的厚度,λ是表面声滤波器的波长,沿着压电的第一表面传播 基质。
摘要:
A surface acoustic wave device includes: a piezoelectric substrate that has two or more resonators formed on a surface; and a supporting substrate that is joined to another surface of the piezoelectric substrate. In this surface acoustic wave device, at least two of the resonators have exciting portions that overlap each other in the direction of propagating surface acoustic waves, and at least a part of the piezoelectric substrate is removed or modified to have different properties between at least one pair of overlapping resonators among the resonators having the overlapping portions.
摘要:
A surface acoustic wave device includes a piezoelectric substrate on which resonators having comb-like electrodes are formed; and a silicon substrate that is directly bonded to the piezoelectric substrate and is less expansive than the piezoelectric substrate, a cavity being formed in the silicon substrate and being located below at least one of the resonators.
摘要:
A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.
摘要:
A surface acoustic wave device includes, a first substrate, a surface acoustic wave chip attached to the first substrate, and a second substrate that hermetically seals the surface acoustic wave chip. At least one of the first and second substrates includes. The first and second substrates have respective joining surfaces. An electric circuit is formed on a surface area of the first substrate other than the joining surfaces.