公开(公告)号：US11289487B2

公开(公告)日：2022-03-29

申请号：US15903964

申请日：2018-02-23

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US11251261B2

公开(公告)日：2022-02-15

申请号：US16415487

申请日：2019-05-17

Applicant: Micron Technology, Inc.

Inventor： Sanket S Kelkar ,  An-Jen B. Cheng ,  Dojun Kim ,  Christopher W. Petz ,  Matthew N. Rocklein ,  Brenda D. Kraus

IPC: H01L27/108 ,  H01L21/768 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to forming a barrier material on an electrode are described. An example method includes forming a top electrode of a storage node on a dielectric material in a semiconductor fabrication sequence and forming, in-situ in a semiconductor fabrication apparatus, a barrier material on the top electrode to reduce damage to the dielectric material when ex-situ of the semiconductor fabrication apparatus.

公开(公告)号：US20210358919A1

公开(公告)日：2021-11-18

申请号：US16874260

申请日：2020-05-14

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Anthony J. Kanago ,  Brenda D. Kraus ,  Soichi Sugiura

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/24

Abstract: Methods for forming microelectronic devices include forming a titanium nitride (TiN) material over a precursor structure. Forming the TiN material comprises repeating cycles of flowing a titanium-including gas adjacent the precursor structure; flowing a reducing gas over the precursor structure; flowing a nitrogen-including gas over the precursor structure; and, before and after flowing the nitrogen-including gas, purging gas. Related microelectronic device and related electronic systems are also described.

公开(公告)号：US20210343732A1

公开(公告)日：2021-11-04

申请号：US17377665

申请日：2021-07-16

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L27/11507 ,  H01L21/02 ,  H01L49/02

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.

公开(公告)号：US11127745B2

公开(公告)日：2021-09-21

申请号：US16906718

申请日：2020-06-19

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20210175072A1

公开(公告)日：2021-06-10

申请号：US16708141

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Richard L. Elliott ,  Christopher W. Petz

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/34

Abstract: A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.

公开(公告)号：US10916564B2

公开(公告)日：2021-02-09

申请号：US16866236

申请日：2020-05-04

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  John Mark Meldrim ,  Haoyu Li ,  Yongjun Jeff Hu ,  Christopher W. Petz ,  Daniel Billingsley ,  Everett A. McTeer

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L21/311 ,  H01L27/11565 ,  H01L21/768 ,  H01L27/1157

Abstract: Some embodiments include an assembly which has channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure has doped semiconductor material in direct contact with bottom regions of the channel material pillars. One or more of magnesium, scandium, yttrium and lanthanide elements is along the bottom regions of the channel material pillars. Some embodiments include methods of forming assemblies. A structure is formed, and a mass is formed against an upper surface of the structure. Plugs are formed within openings in the mass. The plugs comprise a second material over a first material. The first material includes one or more of magnesium, scandium, yttrium and lanthanide elements. Openings are formed to terminate on the first material, and are then extended through the first material. Channel material pillars are formed within the openings.

公开(公告)号：US20210013213A1

公开(公告)日：2021-01-14

申请号：US16504681

申请日：2019-07-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Christopher W. Petz ,  Sanket S. Kelkar ,  Hidekazu Nobuto

IPC: H01L27/108 ,  G11C5/06

Abstract: An apparatus comprising a memory array comprising access lines. Each of the access lines comprises an insulating material adjacent a bottom surface and sidewalls of a base material, a first conductive material adjacent the insulating material, a second conductive material adjacent the first conductive material, and a barrier material between the first conductive material and the second conductive material. The barrier material is configured to suppress migration of reactive species from the second conductive material. Methods of forming the apparatus and electronic systems are also disclosed.

公开(公告)号：US20200266210A1

公开(公告)日：2020-08-20

申请号：US16866236

申请日：2020-05-04

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  John Mark Meldrim ,  Haoyu Li ,  Yongjun Jeff Hu ,  Christopher W. Petz ,  Daniel Billingsley ,  Everett A. McTeer

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/768 ,  H01L27/11565 ,  H01L21/311 ,  H01L27/11519 ,  H01L27/11556

Abstract: Some embodiments include an assembly which has channel material pillars, and which has memory cells along the channel material pillars. A conductive structure is under the channel material pillars. The conductive structure has doped semiconductor material in direct contact with bottom regions of the channel material pillars. One or more of magnesium, scandium, yttrium and lanthanide elements is along the bottom regions of the channel material pillars. Some embodiments include methods of forming assemblies. A structure is formed, and a mass is formed against an upper surface of the structure. Plugs are formed within openings in the mass. The plugs comprise a second material over a first material. The first material includes one or more of magnesium, scandium, yttrium and lanthanide elements. Openings are formed to terminate on the first material, and are then extended through the first material. Channel material pillars are formed within the openings.

公开(公告)号：US20190362785A1

公开(公告)日：2019-11-28

申请号：US16417320

申请日：2019-05-20

Applicant: Micron Technology, Inc.

Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Christopher W. Petz ,  Everett Allen McTeer

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24

Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.