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214 条记录 (耗时 0.028 秒)

    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME
    33.
    发明申请
    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME 审中-公开

    公开(公告)号：US20100123117A1

    公开(公告)日：2010-05-20

    申请号：US12273691

    申请日：2008-11-19

    申请人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    发明人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A non volatile memory cell that includes a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including dielectric material and metal atoms; and a second electrode. In other embodiments, a memory array is disclosed that includes a plurality of non volatile memory cells, each non volatile memory cell including a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including clusters of a first electrically conductive atomic component interspersed in an oxidized second atomic component; and a second electrode; at least one word line; and at least one bit line, wherein the word line is orthogonal to the bit line and each of the plurality of non volatile memory cells are operatively coupled to a word line and a bit line. In still other embodiments, methods are disclosed that include forming a non volatile memory cell include forming a first electrode; forming a variable resistive layer on the first electrode; depositing a two phase alloy layer on the variable resistive layer; converting the two phase alloy layer to a filament growth layer; and depositing a second electrode on the filament growth layer, thereby forming a non volatile memory cell.

    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME
    36.
    发明申请
    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME 审中-公开
    非挥发性记忆细胞，包括纤维生长层及其形成方法

    公开(公告)号：US20100285633A1

    公开(公告)日：2010-11-11

    申请号：US12841212

    申请日：2010-07-22

    申请人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    发明人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC分类号： H01L21/02

    CPC分类号： H01L45/085 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A non volatile memory cell that includes a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including dielectric material and metal atoms; and a second electrode. In other embodiments, a memory array is disclosed that includes a plurality of non volatile memory cells, each non volatile memory cell including a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including clusters of a first electrically conductive atomic component interspersed in an oxidized second atomic component; and a second electrode; at least one word line; and at least one bit line, wherein the word line is orthogonal to the bit line and each of the plurality of non volatile memory cells are operatively coupled to a word line and a bit line. In still other embodiments, methods are disclosed that include forming a non volatile memory cell include forming a first electrode; forming a variable resistive layer on the first electrode; depositing a two phase alloy layer on the variable resistive layer; converting the two phase alloy layer to a filament growth layer; and depositing a second electrode on the filament growth layer, thereby forming a non volatile memory cell.

    摘要翻译： 一种非易失性存储单元，包括第一电极; 设置在所述第一电极上的可变电阻层; 设置在可变电阻层上的长丝生长层，细丝生长层包括介电材料和金属原子; 和第二电极。 在其他实施例中，公开了一种存储器阵列，其包括多个非易失性存储器单元，每个非易失性存储单元包括第一电极; 设置在所述第一电极上的可变电阻层; 设置在可变电阻层上的长丝生长层，所述长丝生长层包括散布在氧化的第二原子组分中的第一导电原子组分的簇; 和第二电极; 至少一个字线; 以及至少一个位线，其中所述字线与所述位线正交，并且所述多个非易失性存储器单元中的每一个可操作地耦合到字线和位线。 在其他实施例中，公开了包括形成非易失性存储单元的方法，包括形成第一电极; 在所述第一电极上形成可变电阻层; 在可变电阻层上沉积两相合金层; 将两相合金层转变成长丝生长层; 以及在所述长丝生长层上沉积第二电极，由此形成非易失性存储单元。

    MAGNETIC RECORDING HEAD
    38.
    发明申请
    MAGNETIC RECORDING HEAD 有权
    磁记录头

    公开(公告)号：US20090237837A1

    公开(公告)日：2009-09-24

    申请号：US12051332

    申请日：2008-03-19

    申请人： Nurul Amin ,  Ibro Tabakovic ,  Eric S. Linville ,  Ming Sun

    发明人： Nurul Amin ,  Ibro Tabakovic ,  Eric S. Linville ,  Ming Sun

    IPC分类号： G11B5/33 ,  B05D1/36 ,  C23C16/40

    CPC分类号： G11B5/3163 ,  G11B5/3133 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member.

    摘要翻译： 制造记录头的方法包括将绝缘体材料沉积在第一构件的至少一部分上，其中绝缘体材料形成具有膜厚度的绝缘膜。 该方法还包括将写入极材料沉积到绝缘膜上，其中写极极材料形成写极极部件，并且其中绝缘膜位于写磁极部件和接触层之间。 此外，在一些实施例中，膜厚决定了写入器极构件和第一接触构件之间的距离，并且还确定了写入器极构件和第二接触构件之间的距离。

    Non-volatile memory cell with programmable unipolar switching element
    39.
    发明授权
    Non-volatile memory cell with programmable unipolar switching element 有权
    具有可编程单极开关元件的非易失性存储单元

    公开(公告)号：US07974117B2

    公开(公告)日：2011-07-05

    申请号：US12497964

    申请日：2009-07-06

    申请人： Wei Tan ,  Nurul Amin ,  Insik Jim ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

    发明人： Wei Tan ,  Nurul Amin ,  Insik Jim ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/76

    摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

    摘要翻译： 公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。 在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。 通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程 通过在相反的第二方向上的写入电流。 开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

    THREE-DIMENSIONAL MAGNETIC STRUCTURE FOR MICROASSEMBLY
    40.
    发明申请
    THREE-DIMENSIONAL MAGNETIC STRUCTURE FOR MICROASSEMBLY 审中-公开
    微分三维磁结构

    公开(公告)号：US20100219156A1

    公开(公告)日：2010-09-02

    申请号：US12396074

    申请日：2009-03-02

    申请人： Roger Lee Hipwell, JR. ,  Nurul Amin ,  Jun Zheng ,  Ming Sun ,  Haiwen Xi

    发明人： Roger Lee Hipwell, JR. ,  Nurul Amin ,  Jun Zheng ,  Ming Sun ,  Haiwen Xi

    IPC分类号： B44C1/22 ,  B05D5/12

    CPC分类号： H01F1/06 ,  B81C1/00031 ,  B81C3/005 ,  B81C2203/057

    摘要： Micro structures and methods for creating complex, 3-dimensional magnetic micro components and their application for batch-level microassembly. Included is a method for making complex, 3-dimensional magnetic structures by depositing a first photoimageable magnet/polymer material on a substrate and patterning to form at least one first active magnetic area and at least one first sacrificial area, then depositing a second photoimageable magnet/polymer material and patterning to form at least one second active magnetic area and at least one second sacrificial area, and then removing the first sacrificial area and the second sacrificial area. Also included is a micro structure self assembly method, the method including providing a substrate having at least one magnetic receptor site, and engaging a 3-dimensional magnetic micro structure having a magnetic micro component with the substrate by aligning the magnetic micro component with the magnetic receptor site.

    摘要翻译： 用于制造复杂的三维磁性微型组件的微观结构和方法及其在批量级微组装中的应用。 包括的方法是通过将第一可光成像磁体/聚合物材料沉积在衬底上并图案化以形成至少一个第一有效磁性区域和至少一个第一牺牲区域来制造复杂的三维磁性结构，然后沉积第二可光成像磁体 /聚合物材料并且被图案化以形成至少一个第二有效磁性区域和至少一个第二牺牲区域，然后去除第一牺牲区域和第二牺牲区域。 还包括微结构自组装方法，该方法包括提供具有至少一个磁性受体部位的衬底，并通过将磁性微成分与磁性体对准而将具有磁性微成分的3维磁性微结构与衬底接合 受体位点。