公开(公告)号：US20170256701A1

公开(公告)日：2017-09-07

申请号：US15600828

申请日：2017-05-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO

IPC: H01L41/332 ,  H01L41/18 ,  H01L41/09 ,  H01L41/04 ,  H01L41/337 ,  H01L41/27 ,  H01L41/08

CPC classification number: H01L41/332 ,  H01L41/04 ,  H01L41/0805 ,  H01L41/0906 ,  H01L41/18 ,  H01L41/27 ,  H01L41/337 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/25 ,  H03H2003/021

Abstract: A piezoelectric resonator includes a piezoelectric thin film including a functional conductor, a fixing layer provided on a principal surface of the piezoelectric thin film to define a void that overlaps a functional portion region, and a support substrate on a principal surface of the fixing layer. A sacrificial layer is provided on a principal surface of a piezoelectric substrate and the fixing layer is provided on the principal surface of the piezoelectric substrate to cover the sacrificial layer. The support substrate is attached to a surface of the fixing layer and the piezoelectric thin film is peeled from the piezoelectric substrate. The functional conductor is provided on the piezoelectric thin film, a through hole is provided in the piezoelectric thin film to straddle a boundary between the fixing layer and the sacrificial layer, and the sacrificial layer is removed by wet etching using the through hole to form the void.

公开(公告)号：US20170250671A1

公开(公告)日：2017-08-31

申请号：US15593498

申请日：2017-05-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masashi OMURA ,  Tetsuya KIMURA ,  Yutaka KISHIMOTO

IPC: H03H9/145 ,  H03H3/08 ,  H03H9/25

CPC classification number: H03H9/14541 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02047 ,  H03H9/02228 ,  H03H9/25 ,  H03H2003/021

Abstract: In an elastic wave device, a piezoelectric substrate is laminated on a support substrate including a recess. On one of a first principal surface and a second principal surface of the piezoelectric substrate, a functional electrode including an IDT electrode is provided. Passing-through sections are provided in the piezoelectric substrate and connected to a hollow section enclosed by the recess and the piezoelectric substrate. In a plan view of the piezoelectric substrate seen from the first principal surface, at least a portion of the passing-through sections is inside a minimum rectangular or substantially rectangular region encompassing an outer circumference of a region including the functional electrode.

公开(公告)号：US20240056051A1

公开(公告)日：2024-02-15

申请号：US18383924

申请日：2023-10-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Masashi OMURA ,  Katsumi SUZUKI ,  Kazunori INOUE

IPC: H03H9/17 ,  H03H9/13

CPC classification number: H03H9/17 ,  H03H9/131

Abstract: An acoustic wave device includes a first layer including a support substrate, a second layer on the first layer and including a piezoelectric film, and a first excitation electrode on the second layer. A cavity is between the first and second layers, and the first excitation electrode at least partially overlaps the cavity in a stacking direction of the first and second layers. A surface roughness of a major surface of the first layer facing the cavity is different from a surface roughness of a major surface of the second layer facing the cavity.

公开(公告)号：US20220038073A1

公开(公告)日：2022-02-03

申请号：US17503415

申请日：2021-10-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO

IPC: H03H9/17 ,  H03H9/13

Abstract: An elastic wave device includes a piezoelectric layer including a first main surface and a second main surface facing the first main surface, an acoustically reflective layer stacked on the first main surface of the piezoelectric layer, an excitation electrode disposed on the piezoelectric layer, and a support layer. The acoustically reflective layer overlaps at least the excitation electrode in a plan view of the piezoelectric layer from the side of the second main surface. The support layer surrounds the acoustically reflective layer in a plan view of the piezoelectric layer from the side of the second main surface.

公开(公告)号：US20210202824A1

公开(公告)日：2021-07-01

申请号：US17205062

申请日：2021-03-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Fumiya KUROKAWA ,  Shinsuke IKEUCHI ,  Yoichi MOCHIDA ,  Seiji UMEZAWA ,  Nobuyoshi ADACHI ,  Yutaka KISHIMOTO

IPC: H01L41/09 ,  H01L41/053 ,  H01L41/113 ,  H01L41/187

Abstract: A piezoelectric transducer includes beam portions each with a fixed end portion and extending in a direction away from the fixed end portion. A base portion is connected to the fixed end portion of each of the beam portions. The beam portions extends in a same plane, and respective extending directions of at least two beam portions are different from each other. The beam portions each include a single crystal piezoelectric layer having a polarization axis in a same direction, an upper electrode layer, and a lower electrode layer. A polarization axis has a polarization component in the plane. An axial direction of an orthogonal axis that is orthogonal to the polarization axis and extends in the above-described plane intersects with an extending direction of each of the plurality of beam portions.

公开(公告)号：US20210146402A1

公开(公告)日：2021-05-20

申请号：US17161726

申请日：2021-01-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Shinsuke IKEUCHI ,  Katsumi FUJIMOTO ,  Tetsuya KIMURA ,  Fumiya KUROKAWA

IPC: B06B1/06 ,  H01L41/047 ,  H01L41/08 ,  H01L41/09

Abstract: A MEMS device includes a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in a membrane portion. The first electrode is covered with the first layer and includes a recess. The piezoelectric layer includes a through hole that passes through the piezoelectric layer between a surface of the piezoelectric layer, which is opposite to the first direction, and the recess at a position corresponding to at least a portion of the first electrode.

公开(公告)号：US20210143315A1

公开(公告)日：2021-05-13

申请号：US17153916

申请日：2021-01-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Shinsuke IKEUCHI

IPC: H01L41/113 ,  H01L41/18 ,  H01L41/047 ,  H01L41/09

Abstract: A piezoelectric device includes a base portion and a membrane portion. The membrane portion is indirectly supported by the base portion, and is located on the upper side relative to the base portion. The membrane portion includes a plurality of layers. The membrane portion does not overlap with the base portion, and includes a single crystal piezoelectric layer, an upper electrode layer, and a lower electrode layer. The membrane portion is provided with a through-groove penetrating in the up-down direction. The through-groove includes a first step portion provided in the thickest layer among the plurality of layers defining the membrane portion. The width of the through-groove is narrower on a lower side than on an upper side with the first step portion as a boundary.

公开(公告)号：US20200321937A1

公开(公告)日：2020-10-08

申请号：US16906096

申请日：2020-06-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yuzo KISHI ,  Yutaka KISHIMOTO ,  Makoto SAWAMURA ,  Seiji KAI

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25 ,  H03F3/21 ,  H04B1/40

Abstract: An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.

公开(公告)号：US20200321933A1

公开(公告)日：2020-10-08

申请号：US16906097

申请日：2020-06-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Seiji KAI ,  Makoto SAWAMURA ,  Yuzo KISHI

IPC: H03H3/08 ,  H01L41/338 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25 ,  H03F3/21 ,  H04B1/40

Abstract: An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.

公开(公告)号：US20200168787A1

公开(公告)日：2020-05-28

申请号：US16777926

申请日：2020-01-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke IKEUCHI ,  Tetsuya KIMURA ,  Katsumi FUJIMOTO ,  Yutaka KISHIMOTO ,  Fumiya KUROKAWA

IPC: H01L41/09 ,  H01L41/257 ,  H01L41/047 ,  H01L41/083 ,  H01L41/08 ,  H01L41/053

Abstract: A piezoelectric device includes a piezoelectric single crystal body with a homogeneous polarization state and of which at least a portion flexurally vibrates, an upper electrode on an upper surface of the piezoelectric single crystal body, a lower electrode on a lower surface of the piezoelectric single crystal body, and a supporting substrate below the piezoelectric single crystal body. A recess extends from a lower surface of the supporting substrate toward the lower surface of the piezoelectric single crystal body.