公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5394425A

公开(公告)日：1995-02-28

申请号：US201342

申请日：1994-02-24

申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

公开(公告)号：US07957447B2

公开(公告)日：2011-06-07

申请号：US12189564

申请日：2008-08-11

申请人： Kazuyuki Matsushita ,  Nobuaki Ueki

发明人： Kazuyuki Matsushita ,  Nobuaki Ueki

IPC分类号： H01S5/00

CPC分类号： H01S5/423 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S2301/176

摘要： Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a longitudinal direction. Plural mesa portions are formed on the substrate by selectively removing at least a portion of the first multilayer reflective film, active layer, and second multilayer reflective film. A selectively oxidized region is formed in at least one of the first multilayer reflective film and the second multilayer reflective film. The VCSEL array device further includes an interlayer insulating film that covers at least a side portion and a bottom portion of the mesa portions, and a surface protecting film that covers the interlayer insulating film. The surface protecting film has plural grooves formed along a longitudinal direction of the substrate in which at least a portion of the surface protecting film is removed.

摘要翻译： 提供了一种VCSEL阵列器件，其至少包括形成在沿纵向方向延伸的衬底上的第一多层反射膜，有源层和第二多层反射膜。 通过选择性地去除第一多层反射膜，有源层和第二多层反射膜的至少一部分，在基板上形成多个台面部分。 在第一多层反射膜和第二多层反射膜中的至少一个中形成选择性氧化区域。 VCSEL阵列器件还包括覆盖台面部分的至少一个侧部和底部的层间绝缘膜，以及覆盖该层间绝缘膜的表面保护膜。 表面保护膜具有沿着基板的纵向方向形成的多个凹槽，其中至少一部分表面保护膜被去除。

公开(公告)号：US07672352B2

公开(公告)日：2010-03-02

申请号：US11728482

申请日：2007-03-26

申请人： Nobuaki Ueki ,  Yasuaki Miyamoto ,  Jun Sakurai ,  Terutaka Inoue

发明人： Nobuaki Ueki ,  Yasuaki Miyamoto ,  Jun Sakurai ,  Terutaka Inoue

IPC分类号： H01S5/42

CPC分类号： H01S5/423 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/4075 ,  H01L2924/00

摘要： A surface-emitting semiconductor array device includes a substrate, a plurality of light-emitting portions, an electrode pad portion formed on the substrate and disposed through the plurality of light-emitting portions and a dividing groove, and having a plurality of electrode pads formed on an insulating film, and a plurality of metal wirings for connecting each of the plurality of light-emitting portions to a corresponding electrode pad through the dividing groove, the dividing groove has a wave-shaped side wall formed on the substrate.

摘要翻译： 表面发射半导体阵列器件包括衬底，多个发光部分，形成在衬底上并设置在多个发光部分上的电极焊盘部分和分隔槽，并且形成有多个电极焊盘 在绝缘膜上形成多个金属布线，并且通过分隔槽将多个发光部分中的每一个连接到相应的电极焊盘的多个金属布线，分隔槽具有形成在基板上的波形侧壁。

公开(公告)号：US07580133B2

公开(公告)日：2009-08-25

申请号：US11447164

申请日：2006-06-06

申请人： Nobuaki Ueki ,  Hidenori Takahashi

发明人： Nobuaki Ueki ,  Hidenori Takahashi

IPC分类号： G01N21/84 ,  G01B11/02

CPC分类号： G01N21/45 ,  G01B11/0675

摘要： A moving-object measuring interferometric apparatus comprises: a light beam output section outputting a measuring beam; an interference optical system obtaining interference light by projecting the measuring beam onto an object and by allowing light reflected from the object or transmitted light having passed through the object to interfere with reference light; an image pickup section obtaining image information by receiving the interference light on an image pickup surface; and an image pickup timing control section setting a momentary image pickup period during which the object is regarded as being stationary to be contained in a light reception acceptable period of the image pickup surface and controlling the interference light to enter the image pickup surface only during the momentary image pickup period.

摘要翻译： 移动物体测量干涉仪包括：输出测量光束的光束输出部分; 干涉光学系统通过将测量光束投射到物体上并且允许从物体反射的光或穿过物体的透射光干涉参考光来获得干涉光; 图像拾取部分，通过在图像拾取表面上接收干涉光来获得图像信息; 以及图像拾取定时控制部分，其设置将所述对象视为静止的瞬时图像拾取周期，以被包含在所述图像拾取表面的光接收可接受周期中，并且仅在所述摄像表面期间控制所述干涉光进入所述图像拾取表面 瞬间图像拾取期。

公开(公告)号：US20090129419A1

公开(公告)日：2009-05-21

申请号：US12189564

申请日：2008-08-11

申请人： Kazuyuki Matsushita ,  Nobuaki Ueki

发明人： Kazuyuki Matsushita ,  Nobuaki Ueki

IPC分类号： H01S5/183 ,  H01L21/02

CPC分类号： H01S5/423 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S2301/176

摘要： Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a longitudinal direction. Plural mesa portions are formed on the substrate by selectively removing at least a portion of the first multilayer reflective film, active layer, and second multilayer reflective film. A selectively oxidized region is formed in at least one of the first multilayer reflective film and the second multilayer reflective film. The VCSEL array device further includes an interlayer insulating film that covers at least a side portion and a bottom portion of the mesa portions, and a surface protecting film that covers the interlayer insulating film. The surface protecting film has plural grooves formed along a longitudinal direction of the substrate in which at least a portion of the surface protecting film is removed.

摘要翻译： 提供了一种VCSEL阵列器件，其至少包括形成在沿纵向方向延伸的衬底上的第一多层反射膜，有源层和第二多层反射膜。 通过选择性地去除第一多层反射膜，有源层和第二多层反射膜的至少一部分，在基板上形成多个台面部分。 在第一多层反射膜和第二多层反射膜中的至少一个中形成选择性氧化区域。 VCSEL阵列器件还包括覆盖台面部分的至少一个侧部和底部的层间绝缘膜，以及覆盖该层间绝缘膜的表面保护膜。 表面保护膜具有沿着基板的纵向方向形成的多个凹槽，其中至少一部分表面保护膜被去除。

公开(公告)号：US20070146724A1

公开(公告)日：2007-06-28

申请号：US11634897

申请日：2006-12-07

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01B11/02

CPC分类号： G01J9/02 ,  G01B11/2441

摘要： A half mirror 4 divides a luminous flux emitted from a low-coherence light source 1 into two luminous fluxes, a secondary reference plate 6 is held integrally with a reference plate 16, and a secondary sample 8 is held integrally with a sample 17. A first luminous flux which is obtained through dividing by the half mirror 4 is reflected at a mirror 5 and which reaches a secondary reference surface 6a, is reflected at the secondary reference surface 6a, returns along the same optical path, and is transmitted through the half mirror 4. The second luminous flux reaches a secondary sample surface 8a, is reflected at the secondary sample surface 8a, returns along the same optical path, and is combined with the first luminous flux at the half mirror 4. The optical path length difference between the first luminous flux and the second luminous flux coincides with approximately twice the optical distance between a reference surface 16a and a sample surface 17a.

摘要翻译： 半反射镜4将从低相干光源1发射的光束分成两个光束，二次参考板6与参考板16一体地保持，并且二次样品8与样品17一体地保持。 通过被半反射镜4分割而获得的第一光束在反射镜5处被反射，并且到达第二参考表面6a在第二参考表面6a被反射，沿着相同的光路返回，并且被传送 通过半反射镜4。 第二光通量到达次级样品表面8a，在次级样品表面8a反射，沿相同的光路返回，并与半反射镜4的第一光通量组合。 第一光通量和第二光通量之间的光程长度差大约是参考表面16a和样品表面1a之间的光学距离的两倍。

公开(公告)号：US20060285566A1

公开(公告)日：2006-12-21

申请号：US11261671

申请日：2005-10-31

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18325 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/18397 ,  H01S5/3095 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2302/00

摘要： A surface emitting semiconductor laser diode includes a semiconductor substrate, a first reflective film provided on the semiconductor substrate, a second reflective film provided above the first reflective film, an active region, a tunnel junction region, and a current funneling layer. The active region, the tunnel junction region, and the current funneling layer are provided in series between the first and second reflective films, the active region being interposed by the tunnel junction region and the current funneling layer.

摘要翻译： 表面发射半导体激光二极管包括半导体衬底，设置在半导体衬底上的第一反射膜，设置在第一反射膜上方的第二反射膜，有源区，隧道结区域和电流漏斗层。 活性区域，隧道结区域和电流漏斗层串联设置在第一和第二反射膜之间，有源区域被隧道结区域和电流漏斗层插入。

公开(公告)号：US20060227835A1

公开(公告)日：2006-10-12

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US20060044567A1

公开(公告)日：2006-03-02

申请号：US11204177

申请日：2005-08-16

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01B11/02

CPC分类号： G01B11/2441

摘要： The light source is a low-coherence light source, and the optical path is regulated so that the reflected light from the upper surface of each metal wire and that from the reference surface interfere with each other during the first measuring operation, and so that the reflected light from the small regional surface of the conductive layer and that from the reference surface interfere with each other during the second measuring operation. The light detecting surface is divided into a plurality of detecting unit regions, and obtains interference fringe information corresponding to the upper surfaces of the metal wires or the general shape of the first or second virtual contact surface engaged with the small regional surfaces of the conductive layer on the basis of the light intensity averaged and detected with respect to the detecting unit regions.

摘要翻译： 光源是低相干光源，并且调整光路，使得来自每个金属线的上表面的反射光和来自参考表面的反射光在第一测量操作期间彼此干涉，并且使得 在第二测量操作期间，来自导电层的小区域表面的反射光和来自参考表面的反射光彼此干涉。 光检测表面被分成多个检测单元区域，并且获得与金属线的上表面相对应的干涉条纹信息或与导电层的小区域表面接合的第一或第二虚拟接触表面的大致形状 基于相对于检测单元区域平均和检测的光强度。