公开(公告)号：US20110036394A1

公开(公告)日：2011-02-17

申请号：US12866011

申请日：2009-02-06

申请人： Koichiro Niira ,  Takehiro Nishimura ,  Norikazu Ito ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Takehiro Nishimura ,  Norikazu Ito ,  Shinichiro Inaba

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/03921 ,  C23C16/4488 ,  C23C16/50 ,  H01L21/2257 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a superstrate type a-Si:H thin film solar cell of which the device characteristics are improved as compared with conventional ones. The solar cell device is manufactured by a process comprising depositing phosphorus on a transparent conductive film formed on a transparent substrate and sequentially forming a p-type layer, an i-type layer, and an n-type layer which are formed of a-Si:H on the transparent conductive film by a plasma CVD method. The phosphorus is deposited, for example, by plasmatization of phosphorus-containing gas. Alternatively, the phosphorus is deposited by etching a phosphorus source provided in a margin region where a plasma excitation voltage is applied but no transparent substrate is placed, with hydrogen plasma at the start of the formation of the p-type layer by the plasma CVD method. Preferably, the deposition of phosphorus is controlled so that the arithmetic average value (ΔCav) of the concentration difference between boron and phosphorus within a range of diffusion of boron in the i-type layer may be 1.1×1017(cm−3)≦ΔCav≦1.6×1017(cm−3) or less.

摘要翻译： 提供与常规的相比，器件特性得到改善的覆盖型a-Si：H薄膜太阳能电池。 太阳能电池器件通过以下工艺制造，该方法包括在形成于透明衬底上的透明导电膜上沉积磷并依次形成由a-Si形成的p型层，i型层和n型层 ：H通过等离子体CVD法在透明导电膜上。 磷例如通过含磷气体的等离子体化而沉积。 或者，通过蚀刻在施加等离子体激发电压的边缘区域而不设置透明衬底的磷源，通过等离子体CVD法形成p型层开始时的氢等离子体来沉积磷 。 优选地，控制磷的沉积，使得在i型层中的硼扩散范围内的硼和磷之间的浓度差的算术平均值（＆Dgr; C av）可以是1.1×10 17（cm -3） ＆nlE;＆Dgr; Cav＆nlE; 1.6×1017（cm-3）以下。

公开(公告)号：US20090014839A1

公开(公告)日：2009-01-15

申请号：US12223785

申请日：2007-02-08

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara

IPC分类号： H01L29/20

CPC分类号： H01L33/305 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/3063 ,  H01S5/32341

摘要： A nitride-based semiconductor device includes: an n-GaN layer 103; an active layer 104 formed on the n-GaN layer 103; a first AlGaN layer 105 formed on the active layer 104 at a growth temperature ranging from 900 to 1200° C. and by doping of Mg at a doping concentration ranging from 5×1019 to 2×1020/cm3; a second AlGaN layer 106 formed on the first AlGaN layer 105 at a growth temperature ranging from 900 to 1200° C.; and a p-GaN layer 107 formed on the second AlGaN layer 106.

摘要翻译： 氮化物类半导体器件包括：n-GaN层103; 形成在n-GaN层103上的有源层104; 在900〜1200℃的生长温度下在有源层104上形成的第一AlGaN层105，并以5×10 19〜2×10 20 / cm 3的掺杂浓度掺杂Mg; 在900〜1200℃的生长温度下形成在第一AlGaN层105上的第二AlGaN层106。 以及形成在第二AlGaN层106上的p-GaN层107。

公开(公告)号：US20050067934A1

公开(公告)日：2005-03-31

申请号：US10670476

申请日：2003-09-26

申请人： Masashi Ueda ,  Tomoko Takagi ,  Norikazu Ito ,  Yoshimi Watabe

发明人： Masashi Ueda ,  Tomoko Takagi ,  Norikazu Ito ,  Yoshimi Watabe

IPC分类号： H01J17/26 ,  H01J37/32 ,  H01J61/28 ,  H01L31/20 ,  H05H1/24

CPC分类号： H01L31/202 ,  H01J37/32091 ,  H01J2237/3132 ,  H01J2237/3137 ,  H01J2237/3142 ,  H05H1/46 ,  H05H2001/463 ,  Y02E10/50 ,  Y02P70/521

摘要： The object of this invention is to realize the new configuration of antenna and the electric power feeding method which substantially suppress the generation of standing wave and consequently to provide a discharge apparatus to generate plasma having an excellent uniformity, a plasma processing method for large-area substrate, and a solar cell manufactured with a high productivity. The present invention is composed of a plurality of U-shaped antenna elements having a power feeding end and a grounded end which are arranged to form an array antenna in such a way that the grounded end and the power feeding end are alternately placed in parallel at regular intervals on a plane, wherein the alternating current electric powers with the same excitation frequency are simultaneously fed to the power feeding ends with the phase shift of 180 degrees between adjacent power feeding ends, the excitation frequency of the alternating current power is 10 MHz-2 GHz, and the length of the conductor is set so that the measured ratio of reflected wave to incident wave is 0.1 or less at the power feeding end. It is also possible to determine the length La of straight conductor to hold the inequality: 0.5(1/α)

摘要翻译： 本发明的目的是实现基本上抑制驻波产生的天线的新配置和馈电方法，从而提供具有均匀性优异的等离子体的放电装置，大面积等离子体处理方法 基板和以高生产率制造的太阳能电池。 本发明由具有供电端和接地端的多个U形天线元件组成，这些U形天线元件被布置成形成阵列天线，使得接地端和馈电端交替地平行放置在 其中具有相同激励频率的交流电功率在相邻供电端之间以180度的相移同时馈送到馈电端，交流功率的激励频率为10MHz- 2GHz，并且设定导体的长度，使得测得的反射波与入射波的比例在馈电端为0.1或更小。 也可以确定直线导体的长度La以保持不等式：0.5（1 /α）

公开(公告)号：US06693303B2

公开(公告)日：2004-02-17

申请号：US10166048

申请日：2002-06-11

申请人： Hiroyuki Ota ,  Masayuki Sonobe ,  Norikazu Ito ,  Tetsuo Fujii

发明人： Hiroyuki Ota ,  Masayuki Sonobe ,  Norikazu Ito ,  Tetsuo Fujii

IPC分类号： H01L2713

CPC分类号： H01L33/02 ,  H01L33/08 ,  H01L33/145 ,  H01L33/32

摘要： A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.

摘要翻译： 氮化物半导体器件由III族氮化物半导体组成。 该器件包括有源层和由预定材料制成并邻近有源层提供的阻挡层。 阻挡层具有比有源层更大的带隙。 该装置还包括由预定材料形成的阻挡部分，用于围绕有源层中的穿透位错。 阻挡部分具有顶点。 该器件还包括其中放置顶点的​​杂质浓度范围为1E16 / cc至1E17 / cc的半导体层。

公开(公告)号：US06680959B2

公开(公告)日：2004-01-20

申请号：US09906698

申请日：2001-07-18

申请人： Tetsuhiro Tanabe ,  Norikazu Ito

发明人： Tetsuhiro Tanabe ,  Norikazu Ito

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/3202

摘要： When a laminated semiconductor portion of nitride based compound semiconductor is formed so as to constitute a portion forming a light emitting layer forming portion on a sapphire substrate, the sapphire substrate has an off orientation angle having a tilt relative to an A axis or a M axis in such a way that 0.2°≦&thgr;={&thgr;a2+&thgr;m2}1/2≦0.3°, wherein 0°≦&thgr;a≦0.3°, 0°≦&thgr;m≦0.3°, when taking the angle tilted relative to the A axis as &thgr;a and to the M axis as &thgr;m, and the foregoing nitride based compound semiconductor layers are laminated onto the surface of the off-oriented C plane. Therefore, it is possible to attain a semiconductor light emitting device having the superior characteristic of light emitting by growing the nitride based compound semiconductor on a sapphire substrate with the degree of flatness high and furthermore to attain a semiconductor laser of a small threshold current by forming a cleavage surface finely while improving the degree of flatness by off-orienting a sapphire substrate.

摘要翻译： 当形成氮化物系化合物半导体的叠层半导体部分以形成蓝宝石衬底上形成发光层形成部分的部分时，蓝宝石衬底具有相对于A轴或M轴倾斜的偏离取向角度 以这样的方式使得0.2°<θ> 2t + 2t2} 1/2 <= 0.3°，其中0°<= THETAa <= 0.3°，0°<= THETAm = 0.3°时，当将相对于A轴倾斜的角度取为θa，并将M轴作为立方体，并且将前述氮化物基化合物半导体层层压到脱离取向C平面的表面上时。 因此，可以通过在蓝宝石衬底上生长氮化物基化合物半导体而获得具有优异的发光特性的半导体发光器件，其平坦度高，此外，通过形成具有小阈值电流的半导体激光器 精细地切割表面，同时通过偏转蓝宝石衬底来改善平坦度。

公开(公告)号：US5239628A

公开(公告)日：1993-08-24

申请号：US395189

申请日：1989-08-18

申请人： Atsushi Hasebe ,  Atsushi Kikuchi ,  Ryohei Kato ,  Norikazu Ito

发明人： Atsushi Hasebe ,  Atsushi Kikuchi ,  Ryohei Kato ,  Norikazu Ito

IPC分类号： G06T1/20

CPC分类号： G06T1/20

摘要： An information processing system including an input/output section, a memory section, and a data processing section for communicating data via the memory section in block units between the input/output section and the data processing section to effect a processing characterized in that a signal indicating an end of the processing in block units is supplied from the data processing section to the input/output section and that a processing start timing signal formed depending on the signal indicating the processing end delivered from the output section is delivered to the data processing section, the processing start timing signal being synchronized with a data block period.

摘要翻译： 一种信息处理系统，包括输入/​​输出部分，存储部分和数据处理部分，用于在输入/输出部分和数据处理部分之间以块为单位经由存储部分传送数据，以进行处理，其特征在于，信号 指示以块为单位的处理结束从数据处理部分提供给输入/输出部分，并且根据从输出部分传送的指示处理结束的信号形成的处理开始定时信号被传送到数据处理部分 处理开始定时信号与数据块周期同步。

公开(公告)号：US08405064B2

公开(公告)日：2013-03-26

申请号：US13067042

申请日：2011-05-04

申请人： Atsushi Yamaguchi ,  Norikazu Ito ,  Shinya Takado

发明人： Atsushi Yamaguchi ,  Norikazu Ito ,  Shinya Takado

IPC分类号： H01L29/06

CPC分类号： H01L29/155 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787

摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1

摘要翻译： 本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1

公开(公告)号：US20120171849A1

公开(公告)日：2012-07-05

申请号：US13390927

申请日：2010-09-24

申请人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

发明人： Norikazu Ito ,  Shinichiro Inaba ,  Hiroshi Matsui ,  Koichiro Niira

IPC分类号： H01L21/203 ,  C23C16/50

CPC分类号： C23C16/5096 ,  H01L31/18

摘要： In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.

摘要翻译： 为了形成高质量的膜而不会导致膜质量的平面不均匀，根据本发明的一个方面的沉积膜形成装置包括：室; 位于所述腔室中的第一电极; 位于所述腔室中的与所述第一电极具有预定间隔的第二电极，并且包括构造成供应材料气体的多个供应部件; 连接到供应部件的引入路径，通过该引入路径引入材料气体; 位于引入路径中的加热器; 以及构造成冷却第二电极的冷却机构。

公开(公告)号：US20110297089A1

公开(公告)日：2011-12-08

申请号：US13211901

申请日：2011-08-17

申请人： Masashi UEDA ,  Tomoko Takagi ,  Norikazu Ito

发明人： Masashi UEDA ,  Tomoko Takagi ,  Norikazu Ito

IPC分类号： H01L31/18 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  B05C9/08 ,  B05C13/00

CPC分类号： C23C16/509 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.

摘要翻译： 形成有多个天线元件，每个天线元件具有第一和第二线性导体，其第一端电互连。 天线元件布置在平面中，使得第一和第二线性导体以规则的间隔彼此交替和分离，从而形成设置在腔室中的一个或多个阵列天线。 第一线性导体的第二端连接到高频电源，第二线性导体的第二端连接到地。 多个基板平行地放置在阵列天线的两侧，距离线性导体之间的距离近似。 通过将成分气体引入室中形成膜。

公开(公告)号：US20110272665A1

公开(公告)日：2011-11-10

申请号：US13067042

申请日：2011-05-04

申请人： Atsushi Yamaguchi ,  Norikazu Ito ,  Shinya Takado

发明人： Atsushi Yamaguchi ,  Norikazu Ito ,  Shinya Takado

IPC分类号： H01L29/15

CPC分类号： H01L29/155 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787

摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1

摘要翻译： 本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1