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    CROSS TALK REDUCTION FOR HIGH DYNAMIC RANGE IMAGE SENSORS
    32.
    发明申请
    CROSS TALK REDUCTION FOR HIGH DYNAMIC RANGE IMAGE SENSORS 审中-公开

    公开(公告)号：US20180286895A1

    公开(公告)日：2018-10-04

    申请号：US15478085

    申请日：2017-04-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/378 ,  H04N9/045

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    Blue enhanced image sensor
    33.
    发明授权
    Blue enhanced image sensor 有权
    蓝色增强图像传感器

    公开(公告)号：US09455291B2

    公开(公告)日：2016-09-27

    申请号：US14601010

    申请日：2015-01-20

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

    IPC: H01L31/00 ,  H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

    Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

    LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS
    34.
    发明申请
    LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS 有权
    增加图像传感器性能的层次

    公开(公告)号：US20140299956A1

    公开(公告)日：2014-10-09

    申请号：US13856993

    申请日：2013-04-04

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

    IPC: H01L31/0216 ,  H01L27/146

    CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

    Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

    Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

    BACKSIDE DEEP TRENCH ISOLATION STRUCTURE FOR LEAKAGE SUPPRESSION
    35.
    发明申请
    BACKSIDE DEEP TRENCH ISOLATION STRUCTURE FOR LEAKAGE SUPPRESSION 有权

    公开(公告)号：US20240387567A1

    公开(公告)日：2024-11-21

    申请号：US18318482

    申请日：2023-05-16

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung

    IPC: H01L27/146

    Abstract: A pixel array substrate includes a semiconductor substrate including a pixel array, a first side, and a second side opposite the first side, a guard ring region in the semiconductor substrate, formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the first side, and a peripheral region in the semiconductor substrate and enclosing the guard ring region. The peripheral region includes at least one device and a deep trench isolation (DTI) structure region disposed between the guard ring region and the at least one device and proximate to the second side of the semiconductor substrate. The DTI structure region is configured to block an electric current path between a P-N junction in the guard ring region and the at least one device.

    Cross talk reduction for high dynamic range image sensors
    36.
    发明授权
    Cross talk reduction for high dynamic range image sensors 有权

    公开(公告)号：US10204951B2

    公开(公告)日：2019-02-12

    申请号：US15882925

    申请日：2018-01-29

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Hsin-Chih Tai ,  Lindsay Alexander Grant

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    Cross talk reduction for high dynamic range image sensors
    37.
    发明授权
    Cross talk reduction for high dynamic range image sensors 有权

    公开(公告)号：US10181490B2

    公开(公告)日：2019-01-15

    申请号：US15478085

    申请日：2017-04-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

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