公开(公告)号：US08823024B2

公开(公告)日：2014-09-02

申请号：US12920313

申请日：2009-02-25

申请人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

发明人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

IPC分类号： H01L29/207

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.

摘要翻译： 光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。 此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。 布置在第二主侧上的第一和第二连接层用于与活性部分层接触。 在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

公开(公告)号：US08569079B2

公开(公告)日：2013-10-29

申请号：US13322662

申请日：2010-05-03

申请人： Elmar Baur ,  Alexander Heindl ,  Bernd Bohm ,  Patrick Rode ,  Heribert Zull

发明人： Elmar Baur ,  Alexander Heindl ,  Bernd Bohm ,  Patrick Rode ,  Heribert Zull

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L33/005 ,  H01L33/20

摘要： A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

摘要翻译： 一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片，其中所述图案化表面至少在具有第一和第二高度的高度的位置形成，其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中，将光致抗蚀剂的表面图案化为远离第二晶片，其中，将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面，其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。

公开(公告)号：US20110272728A1

公开(公告)日：2011-11-10

申请号：US12991864

申请日：2009-04-17

申请人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

发明人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

IPC分类号： H01L33/36

CPC分类号： H01L25/167 ,  H01L33/0079 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

摘要翻译： 提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。 半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。 载体（5）包括面向半导体本体（2）的主表面（51）。 第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。 第二半导体层（22）可通过第二接触件（36）电接触。 保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

公开(公告)号：US08643034B2

公开(公告)日：2014-02-04

申请号：US12920317

申请日：2009-02-25

申请人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

发明人： Karl Engl ,  Frank Singer ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

IPC分类号： H01L29/207

CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.

摘要翻译： 光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。 半导体层序列在每个子区域中具有活性层。 此外，提供至少三个电接触垫。 第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。 第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。 第三线路电平将两个子段彼此连接并与第三接触焊盘接触。 此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

公开(公告)号：US08476644B2

公开(公告)日：2013-07-02

申请号：US12597682

申请日：2008-04-25

申请人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

发明人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。

公开(公告)号：US20120086026A1

公开(公告)日：2012-04-12

申请号：US12920313

申请日：2009-02-25

申请人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

发明人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Martin Strassburg

IPC分类号： H01L33/08

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.

摘要翻译： 光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。 此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。 布置在第二主侧上的第一和第二连接层用于与活性部分层接触。 在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

公开(公告)号：US20100171135A1

公开(公告)日：2010-07-08

申请号：US12596170

申请日：2008-04-24

申请人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sahathil

发明人： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sahathil

IPC分类号： H01L33/10

CPC分类号： H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.

摘要翻译： 本发明涉及一种具有半导体层序列（2）的光电子半导体本体，该半导体层序列（2）包括适于产生电磁辐射的有源层（23）和第一和第二电连接层（4,6），其中半导体本体是 用于从前侧发射电磁辐射，第一和第二电连接层位于与前侧相对的后侧并且通过分离层（5）彼此电绝缘，第一电连接层 （4），第二电连接层（6）和分离层（5）横向重叠，并且第二电连接层（6）的从后侧穿过穿透（3）延伸穿过的部分区域 活性层（23）。 本发明还涉及一种用于制造这种光电半导体本体的方法。

公开(公告)号：US20100117111A1

公开(公告)日：2010-05-13

申请号：US12597682

申请日：2008-04-25

申请人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

发明人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。

公开(公告)号：US20130221369A1

公开(公告)日：2013-08-29

申请号：US13825842

申请日：2011-09-26

申请人： Werner Bergbauer ,  Patrick Rode ,  Martin Strassburg

发明人： Werner Bergbauer ,  Patrick Rode ,  Martin Strassburg

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  B82Y40/00 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48463

摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack consisting of a nitride compound semiconductor material on a carrier substrate, wherein the carrier substrate includes a surface containing silicon. The semiconductor layer stack includes a recess extending from a back of the semiconductor layer stack through an active layer to a layer of a first conductivity type. The layer of the first conductivity type connects electrically to a first electrical connection layer which covers at least a portion of the back through the recess. The layer of a second conductivity type connects electrically to a second electrical connection layer arranged at the back.

摘要翻译： 光电子半导体芯片包括由载体衬底上的氮化物化合物半导体材料组成的半导体层堆叠，其中载体衬底包括含硅的表面。 半导体层堆叠包括从半导体层堆叠的背面通过有源层延伸到第一导电类型的层的凹部。 第一导电类型的层电连接到通过凹部覆盖背部的至少一部分的第一电连接层。 第二导电类型的层电连接到布置在后面的第二电连接层。

公开(公告)号：US08319250B2

公开(公告)日：2012-11-27

申请号：US12991864

申请日：2009-04-17

申请人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

发明人： Patrick Rode ,  Lutz Hoeppel ,  Karl Engl ,  Tony Albrecht

IPC分类号： H01L33/38

CPC分类号： H01L25/167 ,  H01L33/0079 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

摘要翻译： 提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。 半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。 载体（5）包括面向半导体本体（2）的主表面（51）。 第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。 第二半导体层（22）可通过第二接触件（36）电接触。 保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。