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    Method for producing an optoelectronic semiconductor component
    1.
    发明授权
    Method for producing an optoelectronic semiconductor component 有权
    光电半导体元件的制造方法

    公开(公告)号：US08569079B2

    公开(公告)日：2013-10-29

    申请号：US13322662

    申请日：2010-05-03

    申请人： Elmar Baur ,  Alexander Heindl ,  Bernd Bohm ,  Patrick Rode ,  Heribert Zull

    发明人： Elmar Baur ,  Alexander Heindl ,  Bernd Bohm ,  Patrick Rode ,  Heribert Zull

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L33/005 ,  H01L33/20

    摘要： A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

    摘要翻译： 一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片，其中所述图案化表面至少在具有第一和第二高度的高度的位置形成，其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中，将光致抗蚀剂的表面图案化为远离第二晶片，其中，将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面，其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。

    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    2.
    发明申请
    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
    生产光电半导体元件的方法

    公开(公告)号：US20120070927A1

    公开(公告)日：2012-03-22

    申请号：US13322662

    申请日：2010-05-03

    申请人： Elmar Baur ,  Alexander Heindl ,  Bernd Böhm ,  Patrick Rode ,  Heribert Zull

    发明人： Elmar Baur ,  Alexander Heindl ,  Bernd Böhm ,  Patrick Rode ,  Heribert Zull

    IPC分类号： H01L33/48

    CPC分类号： H01L33/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L33/005 ,  H01L33/20

    摘要： A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

    摘要翻译： 一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片，其中所述图案化表面至少在具有第一和第二高度的高度的位置形成，其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中，将光致抗蚀剂的表面图案化为远离第二晶片，其中，将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面，其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。

    Method for Patterning a Semiconductor Surface, and Semiconductor Chip
    3.
    发明申请
    Method for Patterning a Semiconductor Surface, and Semiconductor Chip 审中-公开
    半导体表面图案化方法和半导体芯片

    公开(公告)号：US20120032306A1

    公开(公告)日：2012-02-09

    申请号：US13148631

    申请日：2010-01-22

    申请人： Elmar Baur ,  Bernd Böhm ,  Alexander Heindl ,  Patrick Rode ,  Matthias Sabathil

    发明人： Elmar Baur ,  Bernd Böhm ,  Alexander Heindl ,  Patrick Rode ,  Matthias Sabathil

    IPC分类号： H01L29/12 ,  H01L21/312

    CPC分类号： H01L33/22 ,  H01L33/0062

    摘要： A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer.

    摘要翻译： 规定了图案化半导体表面的方法。 光致抗蚀剂被施加到第二半导体晶片的外部区域。 通过将第一晶片的图案化表面压印到光致抗蚀剂中，使光刻胶远离第二半导体晶片的表面被图案化。 将图案化方法应用于光致抗蚀剂的表面，其中施加在光致抗蚀剂上的结构至少在第二半导体晶片的外部区域被转移。

    Method for activating or deactivating data stored in a memory arrangement of a microcomputer system
    7.
    发明授权
    Method for activating or deactivating data stored in a memory arrangement of a microcomputer system 失效
    用于激活或去激活存储在微计算机系统的存储装置中的数据的方法

    公开(公告)号：US06948071B2

    公开(公告)日：2005-09-20

    申请号：US10159214

    申请日：2002-05-31

    申请人： Klaus Schneider ,  Ralf Angerbauer ,  Alexander Heindl

    发明人： Klaus Schneider ,  Ralf Angerbauer ,  Alexander Heindl

    IPC分类号： G06F12/14 ,  G06F21/57 ,  G06F21/72 ,  G06F21/74 ,  G06F21/79 ,  G06F13/00

    CPC分类号： G06F21/79 ,  G06F21/575 ,  G06F21/72 ,  G06F21/74 ,  G06F2221/2105 ,  G06F2221/2129 ,  G06F2221/2141 ,  G06F2221/2147 ,  H04L9/3247 ,  H04L2209/84

    摘要： A method is for activating or deactivating at least one part of data stored in a memory arrangement of a microcomputer system, in particular one part of a program stored there. In the event of a manipulation of data stored in the memory arrangement by unauthorized third parties, a method having the following method steps may prevent utilization of the manipulated data reliably and effectively:a microcomputer-individual identifier is stored in a signed or encoded fashion a specifiable memory area of the memory arrangement;when the microcomputer system is started up, the signature of the identifier is checked or the identifier is decoded; andas a function of the result of the identifier, one part of the data is activated or deactivated.

    摘要翻译： 一种用于激活或去激活存储在微计算机系统的存储器装置中的数据的至少一部分的方法，特别是存储在其中的程序的一部分。 在由未授权的第三方对存储在存储装置中的数据进行操作的情况下，具有以下方法步骤的方法可以有效地防止对被操纵的数据的利用：将微型计算机单独标识符以有符号或编码的方式存储 存储器布置的可指定存储区; 当微型计算机系统启动时，检查标识符的签名或解码标识符; 并且根据标识符的结果，数据的一部分被激活或去激活。

    Chip and method for producing a chip
    9.
    发明授权
    Chip and method for producing a chip 有权
    用于制造芯片的芯片和方法

    公开(公告)号：US07906352B2

    公开(公告)日：2011-03-15

    申请号：US12064556

    申请日：2006-07-20

    申请人： Herbert Brunner ,  Dieter Eissler ,  Helmut Fischer ,  Ewald Karl Michael Guenther ,  Alexander Heindl

    发明人： Herbert Brunner ,  Dieter Eissler ,  Helmut Fischer ,  Ewald Karl Michael Guenther ,  Alexander Heindl

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    摘要： A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

    摘要翻译： 公开了一种方法，其中准备了包括用于LED芯片并适于发射电磁辐射的层序列的基体。 盖层施加到基体的至少一个主表面。 空腔被引入盖层中，并且被完全或部分地填充有发光转换材料。 发光转换材料包括至少一种荧光体。 还公开了一种方法，其中盖层包括光可固化材料和至少一种磷光体，使得其能够用作发光转换材料并且可以直接光致结构化。 还描述了可通过该方法生产的LED芯片。

    METHOD FOR PRODUCING AN LED CHIP AND LED CHIP
    10.
    发明申请
    METHOD FOR PRODUCING AN LED CHIP AND LED CHIP 有权
    生产LED芯片和LED芯片的方法

    公开(公告)号：US20090212308A1

    公开(公告)日：2009-08-27

    申请号：US12064556

    申请日：2006-07-20

    申请人： Herbert Brunner ,  Dieter Eissler ,  Helmut Fischer ,  Ewald Karl Michael Guenther ,  Alexander Heindl

    发明人： Herbert Brunner ,  Dieter Eissler ,  Helmut Fischer ,  Ewald Karl Michael Guenther ,  Alexander Heindl

    IPC分类号： H01L33/00 ,  H01L21/56

    CPC分类号： H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    摘要： A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

    摘要翻译： 公开了一种方法，其中准备了包括用于LED芯片并适于发射电磁辐射的层序列的基体。 盖层施加到基体的至少一个主表面。 空腔被引入盖层中，并且被完全或部分地填充有发光转换材料。 发光转换材料包括至少一种荧光体。 还公开了一种方法，其中盖层包括光可固化材料和至少一种磷光体，使得其能够用作发光转换材料并且可以直接光致结构化。 还描述了可通过该方法生产的LED芯片。