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1.发明授权公开(公告)号：US08476644B2
公开(公告)日：2013-07-02
申请号：US12597682
申请日：2008-04-25
CPC分类号： H01L33/382 , H01L33/20 , H01L33/46 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.
摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。
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2.发明申请公开(公告)号：US20100117111A1
公开(公告)日：2010-05-13
申请号：US12597682
申请日：2008-04-25
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/46 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.
摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。
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3.发明授权公开(公告)号：US08314430B2
公开(公告)日：2012-11-20
申请号：US12597682
申请日：2008-04-25
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.
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4.发明申请公开(公告)号：US20090065800A1
公开(公告)日：2009-03-12
申请号：US10588167
申请日：2005-02-18
申请人： Ralf Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
发明人： Ralf Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
IPC分类号： H01L33/00 , H01L31/0203 , H01L31/18
CPC分类号： H01L31/022408 , H01L31/022416 , H01L33/0079 , H01L33/0095 , H01L33/382 , H01L2224/16225
摘要： Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.
摘要翻译： 公开了一种光电子部件（1），其包括具有有源区（400）和横向主延伸方向的半导体功能区（2），所述半导体功能区包括至少一个开口（9,27,29） 并且在所述开口的区域中设置有至少在所述开口的一个子区域中与所述活性区电隔离（10）的连接导体材料（8）。 进一步公开的是制造这种光电子部件的方法和包括多个光电子部件的器件。 组件和设备可以完全在晶片上生产。
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5.发明授权公开(公告)号：US08946761B2
公开(公告)日：2015-02-03
申请号：US13811847
申请日：2011-07-15
申请人： Dieter Eissler , Andreas Ploessl
发明人： Dieter Eissler , Andreas Ploessl
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.
摘要翻译： 辐射发射半导体芯片具有基板和布置在基板上的半导体本体，并具有半导体层序列，该半导体层序列包括设置用于产生辐射的有源区，n型区和覆盖层， 远离所述有源区域的n型区域。 存在用于n型区域的外部电接触的覆盖层上的接触结构。 覆盖层具有至少一个凹部，接触结构通过该凹槽延伸到n型区域。
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6.发明申请Radiation-Emitting Semiconductor Chip and Method for Producing a Radiation-Emitting Semiconductor Chip 有权辐射发射半导体芯片及产生辐射发射半导体芯片的方法公开(公告)号：US20130214322A1
公开(公告)日：2013-08-22
申请号：US13811847
申请日：2011-07-15
申请人： Dieter Eissler , Andreas Ploessl
发明人： Dieter Eissler , Andreas Ploessl
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.
摘要翻译： 辐射发射半导体芯片具有基板和布置在基板上的半导体本体，并具有半导体层序列，该半导体层序列包括设置用于产生辐射的有源区，n型区和覆盖层， 远离所述有源区域的n型区域。 存在用于n型区域的外部电接触的覆盖层上的接触结构。 覆盖层具有至少一个凹部，接触结构通过该凹槽延伸到n型区域。
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7.发明授权公开(公告)号：US08835937B2
公开(公告)日：2014-09-16
申请号：US10588167
申请日：2005-02-18
申请人： Ralph Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
发明人： Ralph Wirth , Herbert Brunner , Stefan Illek , Dieter Eissler
IPC分类号： H01L33/00 , H01L31/0224 , H01L33/38
CPC分类号： H01L31/022408 , H01L31/022416 , H01L33/0079 , H01L33/0095 , H01L33/382 , H01L2224/16225
摘要： Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.
摘要翻译： 公开了一种光电子部件（1），其包括具有有源区（400）和横向主延伸方向的半导体功能区（2），所述半导体功能区包括至少一个开口（9,27,29） 并且在所述开口的区域中设置有至少在所述开口的一个子区域中与所述活性区电隔离（10）的连接导体材料（8）。 进一步公开的是制造这种光电子部件的方法和包括多个光电子部件的器件。 组件和设备可以完全在晶片上生产。
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8.发明申请公开(公告)号：US20100171215A1
公开(公告)日：2010-07-08
申请号：US12663669
申请日：2008-05-07
申请人： Helmut Fischer , Dieter Eissler , Alexander Heindl
发明人： Helmut Fischer , Dieter Eissler , Alexander Heindl
CPC分类号： H01L25/0753 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L23/3114 , H01L24/12 , H01L24/81 , H01L24/83 , H01L24/90 , H01L24/95 , H01L24/97 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/44 , H01L2221/68322 , H01L2221/68354 , H01L2221/68363 , H01L2221/68377 , H01L2224/05568 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/13111 , H01L2224/13124 , H01L2224/13144 , H01L2224/13155 , H01L2224/13169 , H01L2224/16225 , H01L2224/29144 , H01L2224/2919 , H01L2224/81001 , H01L2224/81801 , H01L2224/83851 , H01L2224/90 , H01L2224/95001 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10158 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2924/01032 , H01L2924/0105 , H01L2224/81 , H01L2924/00014 , H01L2924/00
摘要： A method of producing optoelectronic components is indicated, in which a plurality of semiconductor bodies, each with a semiconductor layer sequence, are provided. In addition, a component carrier assembly with a plurality of connection pads is provided. The semiconductor bodies are positioned relative to the component carrier assembly. An electrically conductive connection is produced between the connection pads and the associated semiconductor bodies and the semiconductor bodies are attached to the component carrier assembly. The optoelectronic components are finished in that one component carrier (30) is formed from the component carrier assembly, to which the semiconductor bodies are attached, for each optoelectronic component.
摘要翻译： 表示制造光电子部件的方法，其中提供了各自具有半导体层序列的多个半导体本体。 另外，提供具有多个连接焊盘的部件载体组件。 半导体本体相对于分量载体组件定位。 在连接焊盘和相关的半导体主体之间产生导电连接，并且半导体主体附接到部件载体组件。 光电子部件的完成是，对于每个光电子部件，单分量载体（30）由与半导体主体相连的分量载体组件形成。
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公开(公告)号：US07906352B2
公开(公告)日：2011-03-15
申请号：US12064556
申请日：2006-07-20
申请人： Herbert Brunner , Dieter Eissler , Helmut Fischer , Ewald Karl Michael Guenther , Alexander Heindl
发明人： Herbert Brunner , Dieter Eissler , Helmut Fischer , Ewald Karl Michael Guenther , Alexander Heindl
CPC分类号： H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.
摘要翻译： 公开了一种方法，其中准备了包括用于LED芯片并适于发射电磁辐射的层序列的基体。 盖层施加到基体的至少一个主表面。 空腔被引入盖层中，并且被完全或部分地填充有发光转换材料。 发光转换材料包括至少一种荧光体。 还公开了一种方法，其中盖层包括光可固化材料和至少一种磷光体，使得其能够用作发光转换材料并且可以直接光致结构化。 还描述了可通过该方法生产的LED芯片。
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公开(公告)号：US20090212308A1
公开(公告)日：2009-08-27
申请号：US12064556
申请日：2006-07-20
申请人： Herbert Brunner , Dieter Eissler , Helmut Fischer , Ewald Karl Michael Guenther , Alexander Heindl
发明人： Herbert Brunner , Dieter Eissler , Helmut Fischer , Ewald Karl Michael Guenther , Alexander Heindl
CPC分类号： H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.
摘要翻译： 公开了一种方法，其中准备了包括用于LED芯片并适于发射电磁辐射的层序列的基体。 盖层施加到基体的至少一个主表面。 空腔被引入盖层中，并且被完全或部分地填充有发光转换材料。 发光转换材料包括至少一种荧光体。 还公开了一种方法，其中盖层包括光可固化材料和至少一种磷光体，使得其能够用作发光转换材料并且可以直接光致结构化。 还描述了可通过该方法生产的LED芯片。
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