公开(公告)号：US20120217511A1

公开(公告)日：2012-08-30

申请号：US13503861

申请日：2009-11-19

申请人： Philippe Renaud ,  Bruce Green

发明人： Philippe Renaud ,  Bruce Green

IPC分类号： H01L21/20 ,  H01L29/205

CPC分类号： H01L29/7786 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/66462 ,  H01L29/7788

摘要： A vertical power transistor device comprises: a substrate formed from a III-V semiconductor material and a multi-layer stack at least partially accommodated in the substrate. The multi-layer stack comprises: a semi-insulating layer disposed adjacent the substrate and a first layer formed from a first III-V semiconductor material and disposed adjacent the semi-insulating layer. The multi-layer stack also comprises a second layer formed from a second III-V semiconductor material disposed adjacent the first layer and a heterojunction is formed at an interface of the first and second layers.

摘要翻译： 垂直功率晶体管器件包括：由III-V半导体材料形成的衬底和至少部分地容纳在衬底中的多层堆叠。 多层堆叠包括：邻近衬底设置的半绝缘层和由第一III-V半导体材料形成并邻近半绝缘层设置的第一层。 多层堆叠还包括由邻近第一层设置的第二III-V半导体材料形成的第二层，并且在第一层和第二层的界面处形成异质结。

公开(公告)号：US08071162B2

公开(公告)日：2011-12-06

申请号：US11815190

申请日：2005-01-31

申请人： Philippe Renaud ,  Celine Desvaux ,  Catherine Amiens ,  Bruno Chaudret

发明人： Philippe Renaud ,  Celine Desvaux ,  Catherine Amiens ,  Bruno Chaudret

IPC分类号： B05D3/02

CPC分类号： C23C18/08 ,  B82Y30/00 ,  C23C18/06 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/1279 ,  C23C18/1295 ,  Y10T428/31504

摘要： Known techniques for forming nanoparticles require a multiple-step process to coat a surface with nanoparticles. The present invention provides a single-step process that requires the deposition of a substrate in a mixture of a solvent, ligands and organometallic precursors. The mixture containing the substrate is heated under pressure in a dihydrogen environment for a predetermined period of time, during which supercrystals of nanoparticles form on the substrate.

摘要翻译： 用于形成纳米颗粒的已知技术需要用纳米颗粒涂覆表面的多步法。 本发明提供了需要将底物沉积在溶剂，配体和有机金属前体的混合物中的单步方法。 将含有底物的混合物在二氢环境中在压力下加热预定的时间，在此期间纳米颗粒在基底上形成。

公开(公告)号：US08022505B2

公开(公告)日：2011-09-20

申请号：US12282486

申请日：2006-03-13

申请人： Philippe Renaud ,  Patrice Besse ,  Amaury Gendron

发明人： Philippe Renaud ,  Patrice Besse ,  Amaury Gendron

IPC分类号： H01L27/082 ,  H01L23/62 ,  H01L29/76 ,  H01L31/062 ,  H01L29/94

CPC分类号： H01L27/0259 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.

摘要翻译： 半导体器件结构包括多个垂直层和多个导电元件，其中垂直层和多个导电元件协同工作以起到至少两个并联的有源器件的作用。 半导体器件结构还可以包括多个水平导电元件，其中该结构被布置成支撑至少两个并流电流，使得第一电流流过多个垂直导电元件，并且第二电流跨越多个 的水平导电元件。

公开(公告)号：US20100187569A1

公开(公告)日：2010-07-29

申请号：US12668097

申请日：2008-05-16

申请人： Philippe Renaud

发明人： Philippe Renaud

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/02

CPC分类号： H01L29/7787 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7788

摘要： A hetero-structure field effect transistor (HFET). The HFET may include a first contact and a second contact and a hetero-junction structure. The hetero-junction structure may include a first layer made from a first semiconductor material and a second layer made from a second semiconductor material. An interface at which the first layer and the second layer are in contact with each other may be provided, along which a two dimensional electron gas (2DEG) is formed in a part of the first layer directly adjacent to the interface, for propagating of electrical signals from the first contact to the second contact or vice versa. The transistor may further include a gate structure for controlling a conductance of the channel; a substrate layer made from a substrate semiconductor material, and a dielectric layer separating the first layer from the substrate layer. The second contact may include an electrical connection between the substrate layer and the first layer. The electrical connection may include a passage through the dielectric layer filled with an electrically conducting material which is electrically connected to the first layer.

摘要翻译： 异质结场效应晶体管（HFET）。 HFET可以包括第一接触和第二接触以及异质结结构。 异质结结构可以包括由第一半导体材料制成的第一层和由第二半导体材料制成的第二层。 可以提供第一层和第二层彼此接触的界面，沿着该界面在与界面直接相邻的第一层的一部分中形成二维电子气（2DEG），用于传播电 从第一接触到第二接触的信号，反之亦然。 晶体管可以进一步包括用于控制沟道的电导的栅极结构; 由衬底半导体材料制成的衬底层，以及将第一层与衬底层分开的电介质层。 第二接触可以包括在基底层和第一层之间的电连接。 电连接可以包括穿过电介质层的通道，其填充有电连接到第一层的导电材料。

公开(公告)号：US07432792B2

公开(公告)日：2008-10-07

申请号：US10596044

申请日：2004-11-29

申请人： Philippe Renaud ,  Ramamurthy Ramprasad

发明人： Philippe Renaud ,  Ramamurthy Ramprasad

IPC分类号： H01F5/00

CPC分类号： H01F17/0006 ,  H01F10/06 ,  H01F41/042

摘要： An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0.001 and 0.5 and is preferably between 0.01 and 0.1. This range of aspect ratio has a high ferromagnetic resonance frequency.The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.

摘要翻译： 一种电感器电路元件，包括细长的电导体，其与沿导体上方和下方的导体的至少一部分延伸的薄层磁性材料磁耦合。 每个磁性材料层的厚度与其横向尺寸的纵横比在0.001和0.5之间，优选在0.01和0.1之间。 该宽高比范围具有高铁磁共振频率。 电感器优选地包括在导体旁边延伸的磁互连，并且在由沿着导体流动的电流产生的磁通横向于层的位置处将磁性材料层互连。

公开(公告)号：US20080229742A1

公开(公告)日：2008-09-25

申请号：US11689339

申请日：2007-03-21

申请人： Philippe Renaud ,  Thomas Dubois ,  Hua Chen

发明人： Philippe Renaud ,  Thomas Dubois ,  Hua Chen

IPC分类号： F02G5/00 ,  F01D5/00

CPC分类号： F04D29/284 ,  F04D29/30 ,  F05D2240/303

摘要： A turbocharger system having a compressor housing containing a rotating compressor wheel with a plurality of main blades that define an impeller passageway from an inducer to an exducer. Each main blade has a leading edge characterized by an extension forming a non-planar, conical inducer leading edge, and a trailing edge characterized by a reverse-clip-extension forming a non-cylindrical, conical exducer trailing edge.

摘要翻译： 一种涡轮增压器系统，其具有压缩机壳体，该压缩机壳体包含旋转的压缩机叶轮，所述旋转压缩机叶轮具有多个主叶片，所述多个主叶片限定了从诱导器到施放器的叶轮通道。 每个主叶片具有前缘，其特征在于延伸部形成非平面的圆锥形诱导器前缘，后缘的特征在于形成非圆柱形的锥形驱除器后缘的反夹延伸。

公开(公告)号：US07294249B2

公开(公告)日：2007-11-13

申请号：US10355320

申请日：2003-01-31

申请人： Shady Gawad ,  Martin Wüthrich ,  Philippe Renaud

发明人： Shady Gawad ,  Martin Wüthrich ,  Philippe Renaud

IPC分类号： G01N27/02 ,  G01F1/64

CPC分类号： G01N15/1056 ,  B01L3/502761 ,  B01L3/502784 ,  B01L2200/0636 ,  B01L2200/0647 ,  B01L2400/0415 ,  B03C5/026 ,  G01N15/1031 ,  G01N27/02 ,  G01N2015/1006

摘要： Microtechnologically prepared component as a flow cytometer. The component contains a preparation area to specifically influence and separate the particles, preferably by dielectrophoresis, a measuring channel area for characterizing the particles, and a sorting area for sorting the particles identified in the measuring channel area by dielectrophoresis. The sorting includes switching elements which permit active guidance of the particles into two or more subchannels corresponding to the criteria which have been registered in the measuring channel area. With a component configured in this way for the use of a flow cytometer, quick and precise sorting of particles, in particular biological cells in a suspension, can be implemented.

摘要翻译： 微技术制备的组分作为流式细胞仪。 组分包含用于特别影响和分离颗粒的制备区域，优选通过介电电泳，用于表征颗粒的测量通道区域和用于通过介电电泳分选在测量通道区域中识别的颗粒的分选区域。 排序包括允许主动地将颗粒引导到对应于已经登记在测量通道区域中的标准的两个或更多个子通道中的开关元件。 通过以这种方式配置以使用流式细胞仪的组件，可以实现对悬浮液中的颗粒，特别是生物细胞的快速和精确的分选。

公开(公告)号：US20070159285A1

公开(公告)日：2007-07-12

申请号：US10596044

申请日：2004-11-29

申请人： Philippe Renaud ,  Ramamurthy Ramprasad

发明人： Philippe Renaud ,  Ramamurthy Ramprasad

IPC分类号： H01F5/00

CPC分类号： H01F17/0006 ,  H01F10/06 ,  H01F41/042

摘要： An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0.001 and 0.5 and is preferably between 0.01 and 0.1. This range of aspect ratio has a high ferromagnetic resonance frequency. The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.

摘要翻译： 一种电感器电路元件，包括细长的电导体，其与沿导体上方和下方的导体的至少一部分延伸的薄层磁性材料磁耦合。 每个磁性材料层的厚度与其横向尺寸的纵横比在0.001和0.5之间，优选在0.01和0.1之间。 该宽高比范围具有高铁磁共振频率。 电感器优选地包括在导体旁边延伸的磁互连，并且在由沿着导体流动的电流产生的磁通横向于层的位置处将磁性材料层互连。

公开(公告)号：US07229594B2

公开(公告)日：2007-06-12

申请号：US10240031

申请日：2001-04-03

申请人： Philippe Renaud ,  Alain Donzel

发明人： Philippe Renaud ,  Alain Donzel

IPC分类号： B01L3/02 ,  G01N1/10 ,  B65D83/00

CPC分类号： B01L3/0265 ,  B01J2219/00315 ,  B01J2219/00351 ,  B01J2219/00369 ,  B01L3/0241 ,  B01L2200/0605 ,  B01L2400/0644 ,  B01L2400/065 ,  C40B60/14 ,  Y10T436/118339 ,  Y10T436/2575

摘要： The invention provides a device for dispensing accurately-controlled small quantities of at least one liquid, comprising a liquid supply (L); a gas supply (G), arranged to selectively supply a gas pressure; and a capillary duct (20) adapted to be filled with liquid to be dispensed, and to eject the liquid. The device has a filling configuration wherein liquid from the supply is in contact with an end (20a) of the capillary duct to fill the capillary duct with liquid; and a liquid separation and ejection configuration, in which liquid remaining in the liquid supply is separated from liquid that fills the capillary duct to form a discrete quantity (V) of liquid filling the capillary duct (20) out of contact with the remaining liquid of the liquid supply. The capillary duct, filled with this discrete quantity (V) of liquid then has one end in contact with the gas supply and another end in contact with the atmosphere. The discrete quantity of liquid (V), forming an exact dose of liquid to be dispensed, is ejectable from the second end (20b) of the capillary duct by the application of gas pressure.

摘要翻译： 本发明提供一种用于分配精确控制的少量至少一种液体的装置，包括液体供应源（L）; 设置成选择性地供应气体压力的气体供应源（G）; 和适于填充待分配液体的毛细管道（20），并喷射液体。 该装置具有填充构造，其中来自供应的液体与毛细管的端部（20a）接触，以用液体填充毛细管; 以及液体分离和喷射构造，其中残留在液体供应中的液体与填充毛细管的液体分离，以形成填充毛细管（20）的液体的离散量（V），与液体的剩余液体不接触 液体供应。 填充有这种离散量（V）的液体的毛细管具有一端与气体供应接触，另一端与大气接触。 形成待分配液体的精确剂量的液体（V）的离散量可以通过施加气体压力从毛细管的第二端（20b）喷射出来。

公开(公告)号：US20160035822A1

公开(公告)日：2016-02-04

申请号：US14447157

申请日：2014-07-30

申请人： Philippe Renaud ,  Zihao M. Gao

发明人： Philippe Renaud ,  Zihao M. Gao

IPC分类号： H01L29/06 ,  H01L21/266 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/66575 ,  H01L29/66659

摘要： Semiconductor devices include: (a) a semiconductor substrate containing a source region and a drain region; (b) a gate structure supported by the semiconductor substrate between the source region and the drain region; (c) a composite drift region in the semiconductor substrate, the composite drift region extending laterally from the drain region to at least an edge of the gate structure, the composite drift region including dopant having a first conductivity type, wherein at least a portion of the dopant is buried beneath the drain region at a depth exceeding an ion implantation range; and (d) a well region in the semiconductor substrate, wherein the well region has a second conductivity type and wherein the well region is configured to form a channel therein under the gate structure during operation of the semiconductor device. Methods for the fabrication of semiconductor devices are described.

摘要翻译： 半导体器件包括：（a）含有源极区和漏极区的半导体衬底; （b）在源极区域和漏极区域之间由半导体衬底支撑的栅极结构; （c）所述半导体衬底中的复合漂移区，所述复合漂移区从所述漏极区域横向延伸到所述栅极结构的至少一个边缘，所述复合漂移区域包括具有第一导电类型的掺杂剂，其中至少一部分 掺杂剂以超过离子注入范围的深度埋在漏极区之下; 和（d）半导体衬底中的阱区，其中所述阱区具有第二导电类型，并且其中所述阱区被配置为在所述半导体器件的操作期间在所述栅极结构下方形成沟道。 描述了制造半导体器件的方法。