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    Display device and method for manufacturing the same
    33.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08879011B2

    公开(公告)日：2014-11-04

    申请号：US14196236

    申请日：2014-03-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

    IPC: G02F1/136 ,  H01L29/66

    CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

    Abstract translation: 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

    Semiconductor device and method for manufacturing the same
    34.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08872175B2

    公开(公告)日：2014-10-28

    申请号：US13945323

    申请日：2013-07-18

    Applicant: Semiconductor Energy Laboratory, Co., Ltd.

    Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/10

    CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

    Abstract translation: 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。

    Light emitting device and electronic appliance using the same
    35.
    发明授权
    Light emitting device and electronic appliance using the same 有权
    发光装置及使用其的电子设备

    公开(公告)号：US08815419B2

    公开(公告)日：2014-08-26

    申请号：US13964161

    申请日：2013-08-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuji Iwaki ,  Satoshi Seo ,  Takahiro Kawakami ,  Hisao Ikeda ,  Junichiro Sakata ,  Tomoya Aoyama

    IPC: H05B33/12

    CPC classification number: H01L51/0052 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5052 ,  H01L51/5088 ,  H05B33/22 ,  Y10S428/917

    Abstract: A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As the organic compound, an aromatic hydrocarbon having an anthracene skeleton is preferably used. As such an aromatic hydrocarbon, t-BuDNA, DPAnth, DPPA, DNA, DMNA, t-BuDBA, and the like are listed. As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used. Further, the mixed layer preferably shows absorbance per 1 μm of 1 or less or does not show a distinct absorption peak in a spectrum of 450 to 650 nm when an absorption spectrum is measured.

    Abstract translation: 发光器件包括一对电极和设置在该对电极之间的混合层。 混合层含有不含氮原子的有机化合物即不具有芳胺骨架的有机化合物和金属氧化物。 作为有机化合物，优选使用具有蒽骨架的芳香族烃。 作为这样的芳烃，列举了t-BuDNA，DPAnth，DPPA，DNA，DMNA，t-BuDBA等。 作为金属氧化物，优选使用氧化钼，氧化钒，氧化钌，氧化铼等。 此外，当测量吸收光谱时，混合层优选显示每1μm的吸光度为1或更小，或者在450至650nm的光谱中不显示不同的吸收峰。

    Semiconductor device and method for manufacturing the same
    37.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US08779421B2

    公开(公告)日：2014-07-15

    申请号：US13945323

    申请日：2013-07-18

    Applicant: Semiconductor Energy Laboratory, Co., Ltd.

    Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/10

    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

    Semiconductor device including oxide semiconductor
    39.
    发明授权
    Semiconductor device including oxide semiconductor 有权
    半导体器件包括氧化物半导体

    公开(公告)号：US08735884B2

    公开(公告)日：2014-05-27

    申请号：US13632709

    申请日：2012-10-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

    IPC: H01L29/10 ,  H01L29/12

    CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

    Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

    Abstract translation: 目的在于提供一种利用具有稳定电特性的晶体管稳定工作的显示装置。 在使用其中使用氧化物半导体层作为沟道形成区域的晶体管的显示装置的制造中，栅电极进一步设置在至少施加到驱动电路的晶体管上。 在将氧化物半导体层用于沟道形成区域的晶体管的制造中，对氧化物半导体层进行热处理以脱水或脱氢; 因此，存在于氧化物半导体层和栅极绝缘层之间的界面处的杂质，其存在于氧化物半导体层下方并与氧化物半导体层接触，以及氧化物半导体层与设置在该氧化物半导体层上的与保护绝缘层接触的界面 可以减少氧化物半导体层。

    Method for manufacturing semiconductor device
    40.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08623698B2

    公开(公告)日：2014-01-07

    申请号：US13783672

    申请日：2013-03-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

    IPC: H01L21/16

    CPC classification number: H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

    Abstract translation: 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。

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