公开(公告)号：US09905586B2

公开(公告)日：2018-02-27

申请号：US14487336

申请日：2014-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka

IPC: H01L27/108 ,  H01L29/94 ,  H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1225

Abstract: An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

公开(公告)号：US09905579B2

公开(公告)日：2018-02-27

申请号：US15451540

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Hiroyuki Miyake ,  Kengo Akimoto ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with a reduced layout area of transistors is provided. The semiconductor device includes a first transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film over a substrate. When the oxide semiconductor films are subjected to electron diffraction, the ratio of the integrated intensity of luminance of a diffraction spot derived from c-axis alignment to the integrated intensity of luminance of a diffraction spot derived from alignment in any direction in the first oxide semiconductor film is higher than that in the second oxide semiconductor film. In addition, part of the first transistor is located between the second transistor and the substrate.

公开(公告)号：US09842938B2

公开(公告)日：2017-12-12

申请号：US15074043

申请日：2016-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/34 ,  H01L29/26 ,  H01L29/04 ,  H01L29/24 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor which includes a first gate electrode, a first insulating film, an oxide semiconductor film, source and drain electrodes, a second insulating film, and a second gate electrode. The oxide semiconductor film includes a first oxide semiconductor film in contact with the first insulating film, a second oxide semiconductor film in contact with the first oxide semiconductor film, and a third oxide semiconductor film in contact with the second oxide semiconductor film. The first to third oxide semiconductor films each contain In, Zn, and M (M represents Al, Ga, Y, or Sn). The third oxide semiconductor film includes a region in contact with a side surface of the second oxide semiconductor film and a region in contact with the second insulating film. The third oxide semiconductor film includes a region where the content of M is greater than or equal to that of In.

公开(公告)号：US09831325B2

公开(公告)日：2017-11-28

申请号：US15204085

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/40

CPC classification number: H01L29/66969 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

公开(公告)号：US09437741B2

公开(公告)日：2016-09-06

申请号：US14272759

申请日：2014-05-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kenichi Okazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda

IPC: H01L29/786 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film.

Abstract translation: 提供了包括具有优异电特性的晶体管的半导体器件。 或者，提供具有高开口率并且包括能够增加电容的电容器的半导体器件。 半导体器件包括栅电极，与栅电极重叠的氧化物半导体膜，与氧化物半导体膜接触的氧化物绝缘膜，栅电极和氧化物半导体膜之间的第一氧阻隔膜，以及第二氧阻隔膜 与第一氧阻隔膜接触。 氧化物半导体膜和氧化物绝缘膜设置在第一氧阻隔膜和第二氧阻隔膜的内侧。

公开(公告)号：US09320111B2

公开(公告)日：2016-04-19

申请号：US13900907

申请日：2013-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Shunpei Yamazaki

IPC: G09G3/10 ,  H05B37/02 ,  G09G3/32

CPC classification number: H05B37/02 ,  G09G3/3258 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045 ,  Y02B20/42

Abstract: A light-emitting device that is less influenced by variations in threshold voltage of a transistor is provided. Further, a light-emitting device in which variations in luminance due to variations in threshold voltage of a transistor can be reduced is provided. Further, influences due to variations in threshold voltage of a transistor are corrected in a short time. A light-emitting element, a transistor functioning as a switch supplying current to the light-emitting element, and a circuit in which threshold voltage of the transistor is obtained and voltage between a gate and a source (gate voltage) of the transistor is corrected in accordance with the obtained threshold voltage are included. An n-channel transistor in which threshold voltage changes in a positive direction and the amount of the change is small is used. When the threshold voltage of the transistor is obtained, the gate voltage of the transistor is adjusted as appropriate.

Abstract translation: 提供了较少受到晶体管的阈值电压变化影响的发光器件。 此外，提供了可以减少由于晶体管的阈值电压的变化引起的亮度变化的发光装置。 此外，由于晶体管的阈值电压的变化引起的影响在短时间内被校正。 发光元件，用作向发光元件提供电流的开关的晶体管和获得晶体管的阈值电压并且校正晶体管的栅极和源极（栅极电压）之间的电压的电路 根据获得的阈值电压。 使用其中阈值电压在正方向上变化并且变化量小的n沟道晶体管。 当获得晶体管的阈值电压时，适当调整晶体管的栅极电压。

公开(公告)号：US09281410B2

公开(公告)日：2016-03-08

申请号：US13794085

申请日：2013-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Seiji Yasumoto ,  Shun Mashiro ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/00 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, forming a gate insulating film provided over the oxide semiconductor film, forming a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and forming a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.

Abstract translation: 一种制造包括氧化物半导体的半导体器件的方法包括以下步骤：形成氧化物半导体膜，形成设置在氧化物半导体膜上的栅极绝缘膜，形成与栅极绝缘膜接触的栅电极， 与栅电极接触，形成与氧化物半导体膜接触的源电极和漏电极。 在该方法中，在氧化物半导体膜中包含的氧被抑制的温度下，优选在低于氧化物半导体膜中所含的氧的温度的温度下形成栅极绝缘膜和侧壁绝缘膜 被淘汰。

公开(公告)号：US09159837B2

公开(公告)日：2015-10-13

申请号：US13875499

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

Abstract translation: 提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。 提供一种半导体器件，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的氧化物绝缘层，氧化物半导体层，其与氧化物绝缘层在上方并与其接触 栅极电极层以及与氧化物半导体层电连接的源极电极层和漏极电极层。 栅绝缘层包括含氮的硅膜。 氧化物绝缘层含有选自氧化物半导体层的构成元素的一种以上的金属元素。 栅极绝缘层的厚度大于氧化物绝缘层的厚度。

公开(公告)号：US20150171116A1

公开(公告)日：2015-06-18

申请号：US14567205

申请日：2014-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Takashi Hamochi ,  Yukinori Shima ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.

Abstract translation: 半导体器件包括：氧化物半导体膜，与氧化物半导体膜重叠的第一栅电极，氧化物半导体膜与第一栅电极之间的栅极绝缘膜，氧化物半导体膜上的第一绝缘膜，一对 在第一绝缘膜之上并电连接到氧化物半导体膜的电极，在第一绝缘膜和一对电极上的第二绝缘膜，以及位于第二绝缘膜之上并与氧化物重叠的第二栅电极 半导体膜。 第一绝缘膜包括厚度为1nm以上且50nm以下的区域，该一对电极包括电极间距离为1μm以上且6μm以下的区域。

公开(公告)号：US08957411B2

公开(公告)日：2015-02-17

申请号：US13950404

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L29/08 ,  H01L51/00 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract translation: 目的在于提高发光装置的可靠性。 发光装置具有包括用于驱动电路的晶体管和包括用于一个衬底上的像素的晶体管的像素部分的驱动器电路部分。 用于驱动电路的晶体管和用于像素的晶体管是反向交错晶体管，每个晶体管包括与氧化物绝缘层的一部分接触的氧化物半导体层。 在像素部分中，在氧化物绝缘层上设置滤色器层和发光元件。 在用于驱动电路的晶体管中，在氧化物绝缘层上设置与栅电极层和氧化物半导体层重叠的导电层。 使用金属导电膜形成栅极电极层，源极电极层和漏极电极层。