Method of manufacturing semiconductor devices and corresponding semiconductor device

    公开(公告)号:US12165880B2

    公开(公告)日:2024-12-10

    申请号:US17550747

    申请日:2021-12-14

    Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

    Semiconductor device and corresponding method

    公开(公告)号:US11626355B2

    公开(公告)日:2023-04-11

    申请号:US17470269

    申请日:2021-09-09

    Abstract: Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

    Integrated capacitors on lead frame in semiconductor devices

    公开(公告)号:US10593614B2

    公开(公告)日:2020-03-17

    申请号:US16398022

    申请日:2019-04-29

    Abstract: In an embodiment, a semiconductor device includes: a lead-frame including one or more electrically conductive areas, one or more dielectric layers over the electrically conductive area or areas, one or more electrically conductive layer over the one or more dielectric layers thus forming one or more capacitors each including the dielectric layer sandwiched between an electrically conductive area and the electrically conductive layer. The semiconductor device also includes a semiconductor die on the lead-frame electrically connected to the one or more electrically conductive layers.

    Magnetic inertial sensor and method for operating the same
    38.
    发明授权
    Magnetic inertial sensor and method for operating the same 有权
    磁惯性传感器及其操作方法

    公开(公告)号:US09322839B2

    公开(公告)日:2016-04-26

    申请号:US13854782

    申请日:2013-04-01

    Abstract: An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.

    Abstract translation: 惯性传感器,其具有带有激励线圈的主体和沿着第一轴线延伸的第一感测线圈。 悬挂质量体包括磁场集中器,位于对应于激励线圈的位置,并且构造成用于沿沿着第一轴线的平面中的惯性移位。 供电和感测电路电耦合到激励线圈和第一感测线圈,并且被配置为产生在励磁线圈中流动的时间流的电流,以便产生与磁场相互作用的磁场 感应线圈中的电压/电流。 集成电路被配置为测量在第一感测线圈中感应的电压/电流的值,以便检测与悬挂质量沿着第一轴的位移相关联的量。

    Shielded encapsulating structure and manufacturing method thereof
    40.
    发明授权
    Shielded encapsulating structure and manufacturing method thereof 有权
    屏蔽封装结构及其制造方法

    公开(公告)号:US09060227B2

    公开(公告)日:2015-06-16

    申请号:US13659753

    申请日:2012-10-24

    Abstract: One or more embodiments are directed to encapsulating structure comprising: a substrate having a first surface and housing at least one conductive pad, which extends facing the first surface and is configured for being electrically coupled to a conduction terminal at a reference voltage; a cover member, set at a distance from and facing the first surface of the substrate; and housing walls, which extend between the substrate and the cover member. The substrate, the cover member, and the housing walls define a cavity, which is internal to the encapsulating structure and houses the conductive pad. Moreover present inside the cavity is at least one electrically conductive structure, which extends between, and in electrical contact with, the cover member and the conductive pad for connecting the cover member electrically to the conduction terminal.

    Abstract translation: 一个或多个实施例涉及封装结构,包括:具有第一表面并且容纳至少一个导电焊盘的衬底,所述至少一个导电焊盘面向第一表面延伸并且被配置为在参考电压下电耦合到导通端子; 盖构件,其设置在离基板的第一表面一定距离处; 以及在基板和盖构件之间延伸的壳体壁。 衬底,盖构件和壳体壁限定空腔,其在封装结构内部并容纳导电垫。 此外,在腔内部还存在至少一个导电结构,其在盖构件和导电垫之间延伸并与之电接触,用于将盖构件电连接到导电端子。

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