公开(公告)号：US20240063275A1

公开(公告)日：2024-02-22

申请号：US18495292

申请日：2023-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hoon Lee ,  Chang Woo Sohn ,  Keun Hwi Cho ,  Sang Won Baek

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L29/41733 ,  H01L29/66742 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/775 ,  H01L29/78391 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02603 ,  H01L21/28518 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/823475 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6684 ,  H01L27/088

Abstract: A semiconductor device includes first and second isolation regions, a first active region extending in a first direction between the first and second isolation regions, a first fin pattern on the first active region, nanowires on the first fin pattern, a gate electrode in a second direction on the first fin pattern, the gate electrode surrounding the nanowires, a first source/drain region on a side of the gate electrode, the first source/drain region being on the first active region and in contact with the nanowires, and a first source/drain contact on the first source/drain region, the first source/drain contact including a first portion on a top surface of the first source/drain region, and a second portion extending toward the first active region along a sidewall of the first source/drain region, an end of the first source/drain contact being on one of the first and second isolation regions.

公开(公告)号：US11837638B2

公开(公告)日：2023-12-05

申请号：US17335413

申请日：2021-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hoon Lee ,  Chang Woo Sohn ,  Keun Hwi Cho ,  Sang Won Baek

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/02603 ,  H01L21/28518 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/6684 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78391 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device includes first and second isolation regions, a first active region extending in a first direction between the first and second isolation regions, a first fin pattern on the first active region, nanowires on the first fin pattern, a gate electrode in a second direction on the first fin pattern, the gate electrode surrounding the nanowires, a first source/drain region on a side of the gate electrode, the first source/drain region being on the first active region and in contact with the nanowires, and a first source/drain contact on the first source/drain region, the first source/drain contact including a first portion on a top surface of the first source/drain region, and a second portion extending toward the first active region along a sidewall of the first source/drain region, an end of the first source/drain contact being on one of the first and second isolation regions.

公开(公告)号：US11769946B2

公开(公告)日：2023-09-26

申请号：US16344172

申请日：2017-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyung Kim ,  Kyung Bae Ko ,  Tae Gyu Kim ,  Je Sun Moon ,  Jin Kyu Bang ,  Sang Hoon Lee

IPC: H01Q5/30 ,  H05K7/14 ,  H05K5/00 ,  H05K5/02 ,  H04B1/3827 ,  H01Q5/364 ,  H01Q1/24 ,  H01Q13/10 ,  H01Q1/38

CPC classification number: H01Q5/30 ,  H01Q1/24 ,  H01Q1/38 ,  H01Q5/364 ,  H01Q13/10 ,  H04B1/3827 ,  H05K5/0086 ,  H05K5/0226 ,  H05K7/1427

Abstract: An electronic device according to an embodiment may comprise: a housing including a first slit having a length corresponding to a first frequency and a second slit extending from one point of the first slit in a different direction from the first slit and having a length corresponding to a second frequency, and configured to resonate at the first frequency and the second frequency by the first slit and the second slit; a printed circuit board disposed in the housing and at least partially made of a non-conductive material in regions corresponding to the first slit and the second slit; and a power supply unit for supplying power through one point of the housing, adjacent to the first slit or the second slit. Various other embodiments recognized from the specification are also possible.

公开(公告)号：US11710741B2

公开(公告)日：2023-07-25

申请号：US17243943

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Noh ,  Myung Gil Kang ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang ,  Sang Hoon Lee

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/033 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/0924 ,  H01L21/0337 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823864 ,  H01L21/823871 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/66545 ,  H01L29/785 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

公开(公告)号：US11541144B2

公开(公告)日：2023-01-03

申请号：US16750312

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hoon Lee ,  Jee Yong Kim ,  Joo Yeon Park ,  Myung Ju Shin ,  Hong Kwan Cho

IPC: A61L9/18 ,  F25D17/04

Abstract: A refrigerator includes a deodorizer installed on an upper surface of a storage compartment. The deodorizer includes a housing in which a flow path is provided, a suction port provided on a lower surface of the housing to suck air, a discharge port provided in the front of the suction port to discharge air, a photocatalytic deodorizing filter disposed at an inner side of the suction port, and a filter light source configured to irradiate light to the photocatalytic deodorizing filter, the flow path is configured to guide air from a rear lower side where the suction port is positioned to a front lower side where the discharge port is positioned, and the filter light source is disposed above the photocatalytic deodorizing filter to face the photocatalytic deodorizing filter in a state of being spaced apart from each other, and positioned above air passing through the flow path.

公开(公告)号：US20210407508A1

公开(公告)日：2021-12-30

申请号：US17459327

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chakladar Subhojit ,  Sang Hoon Lee ,  Ji Min Lee

IPC: G10L15/22 ,  G10L15/065 ,  G10L15/06

Abstract: Disclosed is a portable communication device, including a display, at least one microphone, a memory, and a processor operably connected to the display, the at least one microphone and the memory, wherein the processor is configured to display guide information, via the display, in response to a user input, the guide information including a first display object related to guide a user voice input for generation of a new voice command and a second display object related to at least one application executed by the new voice command via the portable communication device, receive audio data corresponding to the first display object from a user through the at least one microphone, generate the new voice command corresponding to the audio data, and store, in the memory, the new voice command corresponding to the received audio data and mapping information indicating that the new voice command and the at least one application are mapped.

公开(公告)号：US10734273B2

公开(公告)日：2020-08-04

申请号：US16035906

申请日：2018-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Dae Suk ,  Sang Hoon Lee ,  Masuoka Sadaaki ,  Han Su Oh

IPC: H01L21/00 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes: a pair of wire patterns configured to extend in a first direction and formed on a substrate to be spaced apart from each other in a second direction, the pair of wire patterns disposed closest to each other in the second direction; a gate electrode configured to extend in the second direction on the substrate, the gate electrode configured to surround the wire patterns; and first isolation layers configured to extend in the first direction between the substrate and the gate electrode and formed to be spaced apart from each other in the second direction, the first isolation layers overlapping the pair of wire patterns in a third direction perpendicular to the first and second directions.

公开(公告)号：US20200091152A1

公开(公告)日：2020-03-19

申请号：US16405174

申请日：2019-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Noh ,  Myung Gil Kang ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang ,  Sang Hoon Lee

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/033 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/08

Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

公开(公告)号：US10168190B2

公开(公告)日：2019-01-01

申请号：US14681732

申请日：2015-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hoon Lee

IPC: G01D7/00 ,  G01N33/00 ,  H04M1/725

Abstract: A method and an electronic device for providing environment information are provided. The electronic device includes a sensor configured to measure an environmental factor and obtain first data based on the measured environmental factor, a communication module configured to receive, from at least one external electronic device, second data obtained by the at least one external device, a processor configured to generate environment information based on the first data and the received second data received, and an output module configured to display the environment information.

公开(公告)号：US10156891B2

公开(公告)日：2018-12-18

申请号：US15176261

申请日：2016-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hoon Lee ,  Jeong Il Kang

IPC: G06F1/26 ,  G06F1/32 ,  G06F3/0482 ,  G09G3/20 ,  H02J9/00 ,  H02M1/10

Abstract: A display apparatus, a power supply and a power control method thereof are provided. The display apparatus includes: a display configured to display an image; a power supply comprising: a voltage supplier configured to receive input voltage and supply operation voltage for the display; and a voltage selector configured to selectively supply the operation voltage according to a level of the input voltage; and a processor configured to output a configuration signal to activate or deactivate the voltage selector.