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31.
公开(公告)号:US11581960B2
公开(公告)日:2023-02-14
申请号:US17366329
申请日:2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungmin Jin , Younghoon Son , Hyunyoon Cho , Youngdon Choi , Junghwan Choi
Abstract: A translation device, a test system, and a memory system are provided. The translation device includes plural first input/output (I/O) circuits that respectively transmit and receive first signals through plural pins based on a pulse amplitude modulation (PAM)-M mode, a second I/O circuit that transmits and receives a second signal through one or more pins based on a PAM-N mode, and a translation circuit that translates the first signals into the second signal and translates the second signal into the first signals. M and N are different integers of 2 or more.
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公开(公告)号:US11574662B2
公开(公告)日:2023-02-07
申请号:US17347998
申请日:2021-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sucheol Lee , Younghoon Son , Hyunyoon Cho , Youngdon Choi , Junghwan Choi
IPC: G11C7/10 , G06F13/16 , H03K7/02 , H03K19/017
Abstract: A memory device as provided may apply a pulse amplitude modulation method to data (DQ) signal transmission/reception and may scale a DQ signal according to an operating frequency condition, so as to improve data transmission performance and effectively improve power consumption. The memory device includes a memory cell array, and a data input/output circuit configured to scale a DQ signal that includes data read from the memory cell array and output the scaled DQ signal. The data input/output circuit is configured to scale the DQ signal based on an n-level pulse amplitude modulation (PAMn) (where n is 4 or a greater integer) with a DQ parameter that corresponds an operating frequency condition and output the DQ signal. Other aspects include memory controllers that communicate with the memory devices, and memory systems that include the memory devices and memory controllers.
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33.
公开(公告)号:US20220076716A1
公开(公告)日:2022-03-10
申请号:US17385002
申请日:2021-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngdo Um , Younghoon Son , Youngdon Choi , Jindo Byun , Hyunyoon Cho , Junghwan Choi
IPC: G11C7/10
Abstract: A memory device includes a memory cell array and a transmitter, wherein the transmitter includes a pulse amplitude modulation (PAM) encoder configured to generate a PAM-n first input signal (where n is an integer greater than or equal to 4) from data read from the memory cell array; a pre-driver configured to generate a second input signal based on the first input signal and based on a calibration code signal, and output the second input signal using a first power voltage; and a driver configured to output a PAM-n DQ signal using a second power voltage lower than the first power voltage in response to the second input signal.
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公开(公告)号:US20220068359A1
公开(公告)日:2022-03-03
申请号:US17228943
申请日:2021-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangseob Shin , Jaewoo Park , Younghoon Son , Youngdon Choi , Junghwan Choi
IPC: G11C11/4093 , G11C11/4091 , G11C11/4074 , G11C11/4076 , G06F13/16
Abstract: A multi-level signal receiver includes a data sampler having (M−1) sense amplifiers therein, which are configured to compare a multi-level signal having one of M voltage levels with (M−1) reference voltages, to thereby generate (M−1) comparison signals. The data sampler is further configured to generate a target data signal including N bits, where M is an integer greater than two and N is an integer greater than one. An equalization controller is provided, which is configured to train the (M−1) sense amplifiers by: (i) adjusting at least one of (M−1) voltage intervals during a first training mode, and (ii) adjusting levels of the (M−1) reference voltages during a second training mode, based on equalized values of the (M−1) comparison signals, where each of the (M−1) voltage intervals represents a difference between two adjacent voltage levels from among the M voltage levels.
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公开(公告)号:US20250036520A1
公开(公告)日:2025-01-30
申请号:US18420877
申请日:2024-01-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinsoo Lim , Changkyu Seol , Myoungbo Kwak , Daewook Kim , Dongjin Park , Hyoungbae Ahn , Youngdon Choi , Junghwan Choi
IPC: G06F11/10
Abstract: An electronic device may include a reception circuit configured to generate a plurality of reception data bits based on a voltage level of an analog signal received through a link, and to generate a plurality of bit reliability values indicating probabilities of error occurrence of the plurality of reception data bits based on the voltage level of the analog signal, an alignment circuit configured to group the plurality of reception data bits into a plurality of error correction code (ECC) symbols, and to generate a plurality of symbol reliability values indicating probabilities of error occurrence of the plurality of ECC symbols based on the plurality of bit reliability values, and a decoding circuit configured to correct errors of the plurality of ECC symbols based on the plurality of symbol reliability values.
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公开(公告)号:US12080379B2
公开(公告)日:2024-09-03
申请号:US17939016
申请日:2022-09-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Baek Jin Lim , Youngchul Cho , Seungjin Park , Doobock Lee , Youngdon Choi , Junghwan Choi
CPC classification number: G11C7/222 , G11C7/06 , G11C7/1096
Abstract: A semiconductor device according to an embodiment includes a plurality of sampler circuits configured to receive a plurality of offset clock signals or a plurality of divided clock signals and to sample a data signal in response to each of a plurality of divided clock signals. A calibration circuit applies a first offset clock signal to a first sampler circuit, applies a second offset clock signal having an opposite phase to the first offset clock signal to a second sampler circuit, and generates a first offset adjustment signal for adjusting an offset of the first sampler circuit based on an output of the first sampler circuit that is output in response to the first offset clock signal.
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公开(公告)号:US20240178863A1
公开(公告)日:2024-05-30
申请号:US18511740
申请日:2023-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinsoo Lim , Changkyu Seol , Myoungbo Kwak , Daewook Kim , Dongjin Park , Youngdon Choi
CPC classification number: H03M13/1595 , H03M13/2778 , H03M13/2927
Abstract: A device includes a receiver configured to receive a plurality of Error Correction Code (ECC) codewords transmitted from an external device through a channel including one or more lanes; an ECC decoder configured to generate a plurality of post ECC codewords by performing error correction with respect to the plurality of ECC codewords and generating a first cyclic redundancy check (CRC) codeword based on the plurality of post ECC codewords; a CRC checker configured to determine whether an error exists in the first CRC codeword; and a post ECC decoder configured to, when it is determined that the error exists in the first CRC codeword, generate a second CRC codeword by estimating a remaining error position based on error correction result information received from the ECC decoder and performing remaining error correction with respect to the plurality of post ECC codewords based on the remaining error position.
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公开(公告)号:US11789879B2
公开(公告)日:2023-10-17
申请号:US17903240
申请日:2022-09-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G06F13/1668 , H04L25/4917
Abstract: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.
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公开(公告)号:US11657860B2
公开(公告)日:2023-05-23
申请号:US17361780
申请日:2021-06-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joohwan Kim , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
CPC classification number: G11C7/1084 , G06F3/0656 , G06F3/0679 , G11C7/222
Abstract: A memory package includes a package substrate including a redistribution layer and bonding pads connected to the redistribution layer, the redistribution layer including a plurality of signal paths; a buffer chip mounted on the package substrate and including a plurality of chip pads corresponding to a plurality of memory channels; and a plurality of memory chips stacked on the package substrate and divided into a plurality of groups corresponding to the plurality of memory channels, wherein memory chips of a first group, among the plurality of memory chips, are connected to first chip pads of the plurality of chip pads through first wires, and wherein memory chips of a second group, among the plurality of memory chips, are connected to second chip pads of the plurality of chip pads through second wires and at least a portion of the plurality of signal paths.
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公开(公告)号:US20230110301A1
公开(公告)日:2023-04-13
申请号:US17806827
申请日:2022-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsub Rie , Eunseok Shin , Youngdon Choi , Junyoung Park , Hyunyoon Cho , Junghwan Choi
Abstract: A delay circuit for a clock signal includes a first signal generator, a first inverting circuit, a second signal generator and a second inverting circuit. The first signal generator is configured to generate a plurality of first switching signals based on a delay code. The first inverting circuit includes a plurality of first inverters that are selectively turned on in response to the plurality of first switching signals, respectively, and is configured to adjust a first delay time for both of a first edge and a second edge of the clock signal. The second signal generator is configured to generate a plurality of second switching signals based on a duty code. The second inverting circuit includes a plurality of second pull-up units and a plurality of second pull-down units, respective ones of the plurality of second pull-up units or respective ones of the plurality of second pull-down units are selectively turned on in response to respective ones of the plurality of second switching signals. The second inverting circuit is configured to adjust a second delay time for the first edge, the second edge, or both of the first edge and the second edge of the clock signal.
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