公开(公告)号：US06992307B2

公开(公告)日：2006-01-31

申请号：US10873250

申请日：2004-06-23

申请人： Yoshikiyo Yui ,  Hiroya Ohta

发明人： Yoshikiyo Yui ,  Hiroya Ohta

IPC分类号： H01J29/70 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/065 ,  H01J2237/3175

摘要： An electron gun is composed of a hemispherical cathode (1) and a second bias electrode (8) having apertures (9, 7, 11) along an optical axis of an electron beam fired from the electron gun, a first bias electrode (6) and an anode (10), arranged in that order, as well as a controller for variably controlling an electric potential applied to the first and second bias electrodes. The controller, for example, holds the sum of the electric potentials of the first and second bias electrodes relative to the cathode (1) substantially constant. Further, by adding one or more third bias electrode(s) (20) between the first and second bias electrodes (6, 8) as necessary, the intensity of the electron beam discharged from the high-intensity, high-emittance electron gun can be adjusted without affecting the current density angular distribution.

摘要翻译： 电子枪由半球形阴极（1）和具有沿着从电子枪发射的电子束的光轴上的孔（9,7,11）的第二偏置电极（8）组成，第一偏置电极（6） 和阳极（10），以及用于可变地控制施加到第一和第二偏置电极的电位的控制器。 例如，控制器保持第一和第二偏置电极相对于阴极（1）的电位的总和基本上恒定。 此外，通过根据需要在第一和第二偏置电极（6,8）之间添加一个或多个第三偏置电极（20），从高强度高发射电子枪放出的电子束的强度可以 在不影响电流密度角分布的情况下进行调整。

公开(公告)号：US5326979A

公开(公告)日：1994-07-05

申请号：US950689

申请日：1992-09-25

申请人： Katsuhiro Kawasaki ,  Takashi Matsuzaka ,  Hiroya Ohta ,  Toshihiko Kohno

发明人： Katsuhiro Kawasaki ,  Takashi Matsuzaka ,  Hiroya Ohta ,  Toshihiko Kohno

IPC分类号： H01L21/027 ,  H01J37/302 ,  H01L21/30 ,  H01J37/256

CPC分类号： H01J37/3026

摘要： An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.

摘要翻译： 一种电子束光刻系统，其产生与主图案相关的相移图案数据，并且根据来自计算机的指令通过使用电子束在掩模板上曝光相移图案。 提供了一种电子束光刻系统，其可以显着地减少准备相移图案数据所需的时间。 该装置具有用于存储方程式以产生相移模式数据的参数表，并且通过根据用于施加相移方法的相应指令将原始模式数据分配到等式中并生成相移模式数据，并且自动地将相位 移位模式

公开(公告)号：US08330103B2

公开(公告)日：2012-12-11

申请号：US12213905

申请日：2008-06-26

申请人： Momoyo Enyama ,  Hiroya Ohta

发明人： Momoyo Enyama ,  Hiroya Ohta

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G01N23/22 ,  H01J37/28

摘要： In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.

摘要翻译： 在多电荷粒子束装置中，当试样的表面的电场和电压根据试样的特性而变化时，试样表面上的多个主光束的布局和多个次级的布局 每个探测器上的光束变化。 然后，执行校准以将样品表面上的主光束调整为与包括诸如表面上的电场和施加到样本的电压的检查条件的操作条件的变化相对应的理想布局。 获取样品表面上的主光束的布局作为在舞台上的参考标记的显示器上显示的图像。 基于这些图像测量具有参考标记的理想状态的方差，并且通过一次电子光学系统等的调整来校正。

公开(公告)号：US08288722B2

公开(公告)日：2012-10-16

申请号：US12926489

申请日：2010-11-22

申请人： Masaki Hasegawa ,  Hiroya Ohta

发明人： Masaki Hasegawa ,  Hiroya Ohta

IPC分类号： H01J37/26

CPC分类号： G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

摘要： An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

摘要翻译： 电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。 照射紫外线，照射紫外线的区域作为光电子图像显示。 光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。 具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。 调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。 此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

公开(公告)号：US20110272576A1

公开(公告)日：2011-11-10

申请号：US13143404

申请日：2010-01-04

申请人： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

发明人： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

IPC分类号： G01N23/00

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R31/305 ,  H01J37/3023 ,  H01J2237/004 ,  H01J2237/0044

摘要： Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.

摘要翻译： 提供了一种可实现的多束式带电粒子束施加装置，能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列（111）包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器（109）设置在电子枪（102）（即带电粒子源）与孔径阵列（111）之间产生的带电粒子源图像的位置处， 。 在充电控制光束照明时，在信号检测光束照射时，选择孔径阵列（111）的孔径图案，透镜阵列（112），表面电场控制电极（ 118）等与每个波束扫描同步地切换。 因此，控制电荷并且在合适的条件下分别在不同的定时检测信号。

公开(公告)号：US06870171B2

公开(公告)日：2005-03-22

申请号：US10806190

申请日：2004-03-23

申请人： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

发明人： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

IPC分类号： G03F7/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/04 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/3177 ,  H01J2237/30455

摘要： An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.

摘要翻译： 通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及 图案数据被投影到晶片（118）上。 更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态 基于图案数据来校正取决于偏转位置的位置误差。

公开(公告)号：US20050029473A1

公开(公告)日：2005-02-10

申请号：US10909300

申请日：2004-08-03

申请人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

发明人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  G01K1/08 ,  H01J3/14

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317

摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

摘要翻译： 使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件， 使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

公开(公告)号：US6159644A

公开(公告)日：2000-12-12

申请号：US142077

申请日：1998-09-01

申请人： Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

发明人： Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

IPC分类号： G03F7/20 ,  H01J37/304 ,  G03F9/00

CPC分类号： G03F7/70616 ,  G03F7/70433 ,  G03F7/70458 ,  G03F7/70633 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.

公开(公告)号：US08552373B2

公开(公告)日：2013-10-08

申请号：US13321583

申请日：2010-05-18

申请人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

发明人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

IPC分类号： H01J37/26 ,  H01J37/28 ,  G01N23/22 ,  G01N23/225

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/2446 ,  H01J2237/2817

摘要： Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

摘要翻译： 公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制 电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个 光束带电粒子装置通过切换。 因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

公开(公告)号：US08350214B2

公开(公告)日：2013-01-08

申请号：US13143404

申请日：2010-01-04

申请人： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

发明人： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

IPC分类号： H01L21/66 ,  G01N23/225

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R31/305 ,  H01J37/3023 ,  H01J2237/004 ,  H01J2237/0044

摘要： Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.

摘要翻译： 提供了一种可实现的多束式带电粒子束施加装置，能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列（111）包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器（109）设置在电子枪（102）（即带电粒子源）与孔径阵列（111）之间产生的带电粒子源图像的位置处， 。 在充电控制光束照明时，在信号检测光束照射时，选择孔径阵列（111）的孔径图案，透镜阵列（112），表面电场控制电极（ 118）等与每个波束扫描同步地切换。 因此，控制电荷并且在合适的条件下分别在不同的定时检测信号。