Error correction code rate management for nonvolatile memory
    31.
    发明授权
    Error correction code rate management for nonvolatile memory 有权
    非易失性存储器的纠错码率管理

    公开(公告)号:US08996961B2

    公开(公告)日:2015-03-31

    申请号:US13798696

    申请日:2013-03-13

    CPC classification number: G06F11/1012

    Abstract: An apparatus having an interface and a circuit is shown. The interface is coupled to a memory that is nonvolatile. The circuit is configured to (i) read a plurality of codewords from a block in the memory based on a program/erase count associated with the block, (ii) count a number of iterations used to decode the codewords and (iii) decrease a code rate of an error correction coding used to program the block in response to the number of iterations exceeding a threshold.

    Abstract translation: 示出了具有接口和电路的装置。 该接口耦合到非易失性存储器。 电路被配置为(i)基于与该块相关联的编程/擦除计数,从存储器中的块读取多个码字,(ii)对用于解码码字的迭代次数进行计数,以及(iii)减少一个 用于响应于超过阈值的迭代次数来编程块的纠错编码的码率。

    Non-volatile memory program failure recovery via redundant arrays

    公开(公告)号:US11144389B2

    公开(公告)日:2021-10-12

    申请号:US16580361

    申请日:2019-09-24

    Abstract: Methods, systems and computer-readable storage media for requesting programming of N portions of a plurality of non-volatile memories (NVMs) in accordance with received data. Redundancy information sufficient to recover from failures of M of the N portions for which programming was requested is updated in response to the requesting programming. Upon identifying one to M of the N portions that have failed the programming, re-programming of the one to M of the N portions is requested in accordance with data calculated based at least in part on the redundancy information.

    LDPC Erasure Decoding for Flash Memories

    公开(公告)号:US10230406B2

    公开(公告)日:2019-03-12

    申请号:US14594165

    申请日:2015-01-11

    Abstract: A Solid-State Disk (SSD) controller uses LDPC decoding to enable flash memory accesses with improved latency and/or error correction capabilities. With SLC flash memory having a BER less than a predetermined value, the SSD controller uses a 1-bit read (single read) hard-decision LDPC decoder to access the flash memory. If the hard-decision LDPC decoder detects an uncorrectable error, then the SSD controller uses a 1.5-bit read (two reads) erasure-decision LDPC decoder to access the flash memory. With flash memory having a raw BER between two other predetermined values, the SSD controller omits the use of the hard-decision LDPC decoder and uses only the erasure-decision LDPC decoder to access the flash memory. Variations of the SSD controller similarly access MLC flash memory. Some SSD controllers dynamically switch between hard-decision and erasure-based decoders based on dynamic decoder selection criteria.

    STORAGE SYSTEM WITH APPLICATION TO NVM ADDRESS, SPAN, AND LENGTH

    公开(公告)号:US20180232179A1

    公开(公告)日:2018-08-16

    申请号:US15946891

    申请日:2018-04-06

    Inventor: Earl T. Cohen

    Abstract: Methods for determining, by a storage controller, a read unit address and encoded length information of one of the plurality of read units of a non-volatile memory (NVM) based at least in part on a page address of a particular one of a plurality of pages in a storage space address. The encoded length information may be decoded. The storage controller may determine a span specifying an integer number of the read units and a length in units having a finer granularity than the read units based at least in part on the page address. The storage controller may read data associated with the particular page based at least in part on the read unit address and the span. The storage controller may update space usage information of the NVM based at least in part on the length.

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