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42 条记录 (耗时 0.029 秒)

    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS
    32.
    发明申请
    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS 有权
    气体离子源，充电颗粒显微镜和装置

    公开(公告)号：US20120119086A1

    公开(公告)日：2012-05-17

    申请号：US13355104

    申请日：2012-01-20

    申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

    发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

    IPC分类号： H01J37/26

    CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

    摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

    摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

    Organic thin film transistor array and method of manufacturing the same
    33.
    发明授权
    Organic thin film transistor array and method of manufacturing the same 有权
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号：US07872257B2

    公开(公告)日：2011-01-18

    申请号：US12128993

    申请日：2008-05-29

    申请人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

    发明人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

    IPC分类号： H01L51/30 ,  H01L21/70

    CPC分类号： H01L27/283 ,  H01L51/0003 ,  H01L51/0018 ,  H01L51/0021

    摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

    摘要翻译： 通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。 此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理 并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

    Picture element driving circuit of display panel and display device using the same
    35.
    发明申请
    Picture element driving circuit of display panel and display device using the same 审中-公开
    显示面板的图像元件驱动电路及使用其的显示装置

    公开(公告)号：US20080099760A1

    公开(公告)日：2008-05-01

    申请号：US11976298

    申请日：2007-10-23

    申请人： Masaaki Fujimori ,  Takeo Shiba ,  Masahiko Ando ,  Masahiro Kawasaki ,  Tomihiro Hashizume

    发明人： Masaaki Fujimori ,  Takeo Shiba ,  Masahiko Ando ,  Masahiro Kawasaki ,  Tomihiro Hashizume

    IPC分类号： H01L51/05

    CPC分类号： H01L27/3274 ,  H01L27/1292 ,  H01L27/283 ,  H01L51/0004

    摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor and a second field-effect transistor are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor is used as a gate electrode of the second field-effect transistor.

    摘要翻译： 本发明提供一种有源矩阵显示装置的像素驱动电路，具有不包括两个或更多个FET的通孔的结构。 本发明的显示装置具有其中设置有第一场效应晶体管和第二场效应晶体管的结构，第一和第二场效应晶体管的绝缘膜形成在同一层上，半导体用作 两个场效应晶体管的沟道分别形成在绝缘膜的两个表面上。 显示装置具有其中使用第一场效应晶体管的源极/漏极之一作为第二场效应晶体管的栅电极的结构的电路。

    Field Effect Transistor and Manufacturing Method Thereof
    36.
    发明申请
    Field Effect Transistor and Manufacturing Method Thereof 有权
    场效应晶体管及其制造方法

    公开(公告)号：US20070252229A1

    公开(公告)日：2007-11-01

    申请号：US11733794

    申请日：2007-04-11

    申请人： MASAAKI FUJIMORI ,  Tomihiro Hashizume ,  Masahiko Ando

    发明人： MASAAKI FUJIMORI ,  Tomihiro Hashizume ,  Masahiko Ando

    IPC分类号： H01L23/58

    CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

    摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

    摘要翻译： 一种场效应晶体管的制造方法，其中，在基板上设置图案化栅电极，并且在基板上设置栅极绝缘体，并且栅电极，源电极和漏极彼此间隔开 栅极绝缘体，设置作为源电极和漏电极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域与漏极之一之间的边界 电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域，并将溶液干燥。

    Organic Thin Film Transistor Array and Method of Manufacturing the Same
    39.
    发明申请
    Organic Thin Film Transistor Array and Method of Manufacturing the Same 有权
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号：US20080315191A1

    公开(公告)日：2008-12-25

    申请号：US12128993

    申请日：2008-05-29

    申请人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

    发明人： Tomihiro Hashizume ,  Yuji Suwa ,  Masaaki Fujimori ,  Tadashi Arai ,  Takeo Shiba

    IPC分类号： H01L51/30 ,  H01L21/70

    CPC分类号： H01L27/283 ,  H01L51/0003 ,  H01L51/0018 ,  H01L51/0021

    摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

    摘要翻译： 通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。 此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理 并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

    Rechargeable lithium battery containing ion-irradiated carbonaceous material and production thereof
    40.
    发明申请
    Rechargeable lithium battery containing ion-irradiated carbonaceous material and production thereof 审中-公开
    含有离子辐射碳质材料的可充电锂电池及其制造

    公开(公告)号：US20050196675A1

    公开(公告)日：2005-09-08

    申请号：US10928252

    申请日：2004-08-30

    申请人： Tomihiro Hashizume ,  Masahiko Ichimura ,  Masahiro Kasai ,  Rikizo Hatakeyama ,  Yoshiyuki Kawazoe

    发明人： Tomihiro Hashizume ,  Masahiko Ichimura ,  Masahiro Kasai ,  Rikizo Hatakeyama ,  Yoshiyuki Kawazoe

    IPC分类号： H01M10/05 ,  B05D5/12 ,  C01B31/30 ,  H01M4/1393 ,  H01M4/36 ,  H01M4/587 ,  H01M4/58

    CPC分类号： H01M4/587 ,  H01M4/1393

    摘要： A rechargeable lithium battery includes an anode doped with lithium ions in an amount corresponding to the irreversible capacity. The anode is produced by applying lithium ions to an anodic active carbonaceous material. The anode may be produced by applying a slurry of the anodic active material composition containing a carbonaceous material to an anodic collector, drying and compression-molding the resulting article, and applying lithium ions to the molded article. Alternatively, the lithium-doped anode may be produced by applying lithium ions in the production of a carbonaceous material to yield a carbonaceous material containing lithium ions, and mixing the same with a carbonaceous material containing no lithium ions. The resulting rechargeable lithium battery using, for example, amorphous carbon as an anodic active material and a lithium transition metal compound as a cathodic active material shows a reduced irreversible capacity.

    摘要翻译： 可再充电锂电池包括掺杂有相当于不可逆容量的量的锂离子的阳极。 通过将锂离子施加到阳极活性碳质材料上来制造阳极。 阳极可以通过将含有碳质材料的阳极活性物质组合物的浆料施加到阳极集电体上，干燥和压缩所得制品，并将锂离子施加到模塑制品上来制备。 或者，掺杂锂的阳极可以通过在生产碳质材料中施加锂离子以产生含有锂离子的碳质材料，并将其与不含锂离子的碳质材料混合来制造。 使用例如作为阳极活性物质的无定形碳和作为阴极活性物质的锂过渡金属化合物的所得可再充电锂电池显示降低的不可逆容量。