摘要:
A semiconductor chip including at least three variable capacity diodes for use at a frequency of 30 to 300 megaherzs is mounted on a grounding member so as to be sealed within a package. A plurality of external connection conductors each coupled to the diode and a plurality of external ground conductors coupled to the grounding member extend out of the package. Each ground conductor is disposed between the adjacent two of the external ground conductors. The arrangement permits a decrease of interference occurring due to a stray capacitance between the diodes.
摘要:
Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译:提供了一种场效应晶体管,其包括栅极绝缘层,与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里,栅绝缘层,第一半导体晶体层和第二半导体晶体层按栅极绝缘层,第一半导体晶体层和第二半导体晶体层的顺序排列,第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1(0
摘要:
Target fluid is made into electrolyte solution when measured fluid-quality value is lower than a first condition value, by substituting an impurity anion contained in the target fluid with a predetermined anion and substituting an impurity cation contained in the target fluid with a predetermined cation, and purified when the fluid-quality value is higher than a second condition value. The above procedures are repeated, so that the fluid-quality value of the target fluid falls within a predetermined range, to make the target fluid into electrolyte solution with a correlation between pH and conductivity.
摘要:
An electrical-discharge machining apparatus for machining a workpiece using an aqueous machining fluid includes an insulator for electrically insulating a machine platen from the workpiece where the workpiece is placed. A machining-fluid-property measuring instrument measures the state of the machining fluid; and a machining-fluid-property controller maintains the pH of the machining fluid so as to be kept within 8.5 through 10.5.
摘要:
A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.
摘要翻译:具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层,n In x Al y Ga 1-x-y P的第二晶体层,第一和第二晶体层是形成异质结的晶格匹配层,以及控制 在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。 控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内,从而使电流放大系数和偏移电压能够通过改变 异质结能带隙。
摘要:
A single disc is configured to deal with both HD DVD information and DVD information. This invention has the following basic elements (1) a single-sided dual layer optical disc where a light transmission layer, a first recording layer accessed with a first laser beam, an space layer, and a second recording layer accessed with a second laser beam are arranged in that order in the direction in which a laser beam enters, (2) the areal recoding density of the second recording layer is three times or more that of the first recording layer, (3) information indicating that the second recording layer has been formed is formed in the first recording layer, and (4) information indicating that the first recording layer has been formed is formed in the second recording layer.
摘要:
In a wire electrical discharge machining apparatus, an upper main-discharge power supply is connected between an upper conducting terminal and a workpiece using an upper main-feeder line capable of configuring outward and homeward paths, and a lower main-discharge power supply is connected between a lower conducting terminal and the workpiece using a lower main-feeder line capable of configuring outward and homeward paths. Moreover, a sub-discharge power supply is connected between the upper conducting terminal and the workpiece and between the lower conducting terminal and the workpiece using an upper and a lower sub-feeder lines that have higher impedances than the impedances of the upper and the lower main-feeder lines and can configure outward and homeward paths.
摘要:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
摘要:
A wire electric discharge machine includes a wire electrode; a machining power supply that supplies a machining current to between the wire electrode and a workpiece; a first power feed contact and a second power feed contact that respectively feed power to the wire electrode; a first machining-current loop that lets a first machining current to flow from the first power feed contact toward the workpiece; a second machining-current loop that lets a second machining current to flow from the second power feed contact toward the workpiece; an impedance switching circuit that is provided in at least any one of the first machining-current loop and the second machining-current loop; and a control unit that controls a flow ratio of the first machining current and the second machining current by changing an impedance of the impedance switching circuit.
摘要:
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.