公开(公告)号：US20170033234A1

公开(公告)日：2017-02-02

申请号：US15293434

申请日：2016-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kunio KIMURA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/146 ,  H01L29/423 ,  H01L27/12

Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

Abstract translation: 一个目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 另一个目的是以高产量制造高度可靠的半导体器件。 在包括氧化物半导体膜的顶栅交错晶体管中，作为与氧化物半导体膜接触的第一栅极绝缘膜，通过使用含有氟化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜; 并且作为层叠在第一栅极绝缘膜上的第二栅极绝缘膜，通过使用含有氢化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜。

公开(公告)号：US20160020035A1

公开(公告)日：2016-01-21

申请号：US14802326

申请日：2015-07-17

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Nobuhiro INOUE ,  Ryota TAJIMA ,  Kazutaka KURIKI ,  Mitsuhiro ICHIJO ,  Yoshikazu HIURA ,  Mai SUGIKAWA

IPC: H01G9/042 ,  H01M4/136 ,  H01M4/131 ,  H01M10/0525 ,  H01M4/134

CPC classification number: H01G11/30 ,  H01M4/0428 ,  H01M4/13 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/136 ,  H01M4/139 ,  H01M4/366 ,  H01M4/386 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0427 ,  H01M10/0431 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/0585 ,  H01M10/425 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.

Abstract translation: 提供高容量的蓄电装置。 或者，提供具有优异的循环特性的蓄电装置。 或者，提供具有高充放电效率的蓄电装置。 或者，提供寿命长的蓄电装置。 在负极集电体上设置负极活性物质，负极活性物质层以第一层和第二层交替堆叠的方式形成。 第一层至少包括选自Si，Mg，Ca，Ga，Al，Ge，Sn，Pb，Sb，Bi，Ag，Zn，Cd，As，Hg和In中的一种元素。 第二层包括氧和与第一层中包含的元素相同的元素。

公开(公告)号：US20150140732A1

公开(公告)日：2015-05-21

申请号：US14578891

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

Abstract translation: 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。

公开(公告)号：US20140001470A1

公开(公告)日：2014-01-02

申请号：US14018712

申请日：2013-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

Abstract translation: 目的在于提供具有良好电气特性的半导体器件。 使用具有小于6×1020原子/ cm3的氢浓度和大于或等于1×1020原子/ cm3的氟浓度的栅极绝缘层作为与形成沟道区的氧化物半导体层接触的栅极绝缘层， 从而可以减少从栅极绝缘层释放的氢的量，并且可以防止氢向氧化物半导体层的扩散。 此外，可以通过使用氟来消除存在于氧化物半导体层中的氢; 因此，可以降低氧化物半导体层中的氢含量。 因此，可以提供具有良好电特性的半导体器件。

公开(公告)号：US20130228784A1

公开(公告)日：2013-09-05

申请号：US13865504

申请日：2013-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L33/00

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。