公开(公告)号：US07694213B2

公开(公告)日：2010-04-06

申请号：US11260444

申请日：2005-10-27

Applicant: Kazuhiro Kuwabara ,  Noriaki Kuwahara ,  Kiyoshi Yasuda ,  Shinji Abe ,  Nobuji Tetsutani

Inventor： Kazuhiro Kuwabara ,  Noriaki Kuwahara ,  Kiyoshi Yasuda ,  Shinji Abe ,  Nobuji Tetsutani

IPC: G06F17/00

CPC classification number: H04N1/00132 ,  G11B27/034 ,  G11B27/34 ,  H04N1/00198 ,  H04N1/00453 ,  H04N21/4143 ,  H04N21/8153 ,  H04N21/84 ,  H04N21/854 ,  H04N2201/3247 ,  H04N2201/325 ,  H04N2201/3254 ,  H04N2201/3264 ,  H04N2201/3266 ,  H04N2201/3273

Abstract: A video content creating apparatus includes a computer. The computer registers photographic image data input from a photographic input device and meta-information set in relation to the data in a database. After retrieving photographs based on the meta-information, the apparatus selects the photographs to be used for a reminiscence video and decides the reproduction order of the photographs. After registering a BGM playlist, the apparatus reproduces the photographs and BGM for creating the reminiscence video. If there are any regions, the apparatus displays the regions on a monitor while aligning them in sequence according to the meta-information on them. Upon completion of generation (rendering) of a series of reminiscence video contents, the apparatus creates the reminiscence video by saving the rendering results in Flash movie format, for example.

Abstract translation: 视频内容创建设备包括计算机。 计算机登记从摄影输入装置输入的摄影图像数据和与数据库中的数据相关的元信息集。 在根据元信息检索照片之后，设备选择要用于回忆录像的照片并且决定照片的再现顺序。 在注册BGM播放列表之后，设备再现用于创建回忆录像的照片和BGM。 如果存在任何区域，那么该装置在监视器上显示该区域，同时根据它们上的元信息依次对齐它们。 在完成一系列回忆录像内容的生成（渲染）后，该装置例如通过将呈现结果保存在Flash电影格式中来创建回忆录像。

公开(公告)号：US20090170225A1

公开(公告)日：2009-07-02

申请号：US12331515

申请日：2008-12-10

Applicant: Takafumi Oka ,  Masatsugu Kusunoki ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

Inventor： Takafumi Oka ,  Masatsugu Kusunoki ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC: H01L21/00

CPC classification number: H01L33/44 ,  H01L33/32 ,  H01L33/40

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.

Abstract translation: 一种半导体发光器件的制造方法，包括在半导体衬底上形成绝缘膜，所述绝缘膜在其中具有开口，在所述开口和所述绝缘膜上形成Pd电极，并且在所述绝缘膜上除去所述Pd电极的所述部分 通过对该部分施加物理力，同时将Pd电极留在开口中。

公开(公告)号：US20090130790A1

公开(公告)日：2009-05-21

申请号：US12264976

申请日：2008-11-05

Applicant: Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

Inventor： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC: H01L21/20

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

Abstract: A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

Abstract translation: 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

公开(公告)号：US07441150B2

公开(公告)日：2008-10-21

申请号：US11311404

申请日：2005-12-20

Applicant: Shinji Abe

Inventor： Shinji Abe

IPC: G06F11/00

CPC classification number: G06F11/2023 ,  G06F11/1633 ,  G06F11/165 ,  G06F11/1658 ,  G06F11/1691 ,  G06F11/2097

Abstract: A fault tolerant (FT) computer system includes a primary system and a secondary system. The primary system includes a first CPU; a first FT control section connected with the first CPU; and a first south bridge connected electrically and operatively with the first FT control section. The secondary system includes a second CPU; a second FT control section connected with the second CPU; and a second south bridge connected electrically with the second FT control section and not connected operatively with the second FT control section. The first FT control section and the second FT control section are connected by a link section, and the primary system and the secondary system operate in synchronization with each other by using the link section, except for the second south bridge.

Abstract translation: 容错（FT）计算机系统包括主系统和辅助系统。 主系统包括第一CPU; 与第一CPU连接的第一FT控制部; 以及与第一FT控制部分电连接和可操作地连接的第一南桥。 辅助系统包括第二CPU; 与第二CPU连接的第二FT控制部; 以及与第二FT控制部分电连接并且不与第二FT控制部分可操作地连接的第二南桥。 第一FT控制部分和第二FT控制部分通过链接部分连接，并且主系统和辅助系统通过使用除了第二个南桥之外的链接部分彼此同步地进行操作。

公开(公告)号：US20080199983A1

公开(公告)日：2008-08-21

申请号：US12029510

申请日：2008-02-12

Applicant: Hitoshi Nakamura ,  Shinji Abe ,  Harumi Nishiguchi

Inventor： Hitoshi Nakamura ,  Shinji Abe ,  Harumi Nishiguchi

IPC: H01L21/329

CPC classification number: H01S5/0201 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/54453 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/1033 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  H01L2924/00014

Abstract: A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line.

Abstract translation: 制造包括GaN晶片的半导体激光器件的方法包括在GaN晶片上形成半导体层并形成脊部。 在半导体层中形成凹槽，使得每个凹槽与每个脊部之间的刻划线和上游划线标记配置。 凹槽向下游侧弯曲并向外凸出，并且每个凹槽在切割线上具有顶点。 从顶点延伸的一侧优选不相对于切割方向或切割线形成60度的角度。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

Applicant: Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

Inventor： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC: H01L27/15

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

Abstract translation: 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US07294592B2

公开(公告)日：2007-11-13

申请号：US10203339

申请日：2001-02-08

Applicant: Shinji Abe ,  Hiroshi Suzuki ,  Nobutaka Aimono

Inventor： Shinji Abe ,  Hiroshi Suzuki ,  Nobutaka Aimono

IPC: B32B5/02 ,  B32B17/06

CPC classification number: B32B27/12 ,  B32B5/022 ,  B32B5/024 ,  B32B5/026 ,  B32B7/12 ,  B32B27/22 ,  B32B27/34 ,  B32B27/36 ,  B32B27/40 ,  B32B2262/0261 ,  B32B2262/0276 ,  B32B2323/04 ,  B32B2323/10 ,  B32B2367/00 ,  B32B2377/00 ,  D06M11/36 ,  D06N3/0056 ,  D06N3/06 ,  D06N3/183 ,  D06N3/186 ,  E04H15/54 ,  Y10T428/3158 ,  Y10T442/20 ,  Y10T442/259 ,  Y10T442/2738

Abstract: A tent cloth canvas coated on the surface thereof with a photocatalyst, wherein (1) the adhesiveness between a photocatalyst and the tent cloth canvas is kept satisfactorily for an extended time, (2) an anti-fouling capability is kept for a long time, and (3) the photocatalyst carried on the tent cloth canvas does not promote a lowering with time of a tear strength. A tent cloth canvas coated on the surface thereof with a photocatalyst is used, wherein more than 50% in amount of a plasticizer contained in the canvas remains in comparison with that at an initial stage 1500 hours after the canvas is subjected to a sunshine carbon arc type accelerated weathering test as specified in JIS-K5400, or after 3-year outdoor exposure; and a tent clothe canvas having the above properties and structures further contains a plasticizer having a molecular weight of at least 400, and/or a plasticizer migration restricting layer is provided in the middle of the tent cloth and photocatalyst coating layer.

Abstract translation: 一种用光催化剂涂布在其表面上的帐篷布，其中（1）光催化剂与帐篷布帆布之间的粘合性长时间保持良好，（2）长时间保持防污能力， 和（3）携带在帐篷布上的光催化剂不会随着撕裂强度的时间而升高。 使用在其表面涂覆有光催化剂的帐篷布帆布，其中包含在帆布中的增塑剂含量的多于50％与在帆布经受阳光碳弧后1500小时的初始阶段相比 JIS-K5400规定的加速型风化试验，或室外暴露3年以上。 并且具有上述性能和结构的帐篷布料帆布还包含分子量至少为400的增塑剂和/或增塑剂迁移限制层，在帐篷布和光催化剂涂层的中间设置。

公开(公告)号：US20060150005A1

公开(公告)日：2006-07-06

申请号：US11311404

申请日：2005-12-20

Applicant: Shinji Abe

Inventor： Shinji Abe

IPC: G06F11/00

CPC classification number: G06F11/2023 ,  G06F11/1633 ,  G06F11/165 ,  G06F11/1658 ,  G06F11/1691 ,  G06F11/2097

Abstract: A fault tolerant (FT) computer system includes a primary system and a secondary system. The primary system includes a first CPU; a first FT control section connected with the first CPU; and a first south bridge connected electrically and operatively with the first FT control section. The secondary system includes a second CPU; a second FT control section connected with the second CPU; and a second south bridge connected electrically with the second FT control section and not connected operatively with the second FT control section. The first FT control section and the second FT control section are connected by a link section, and the primary system and the secondary system operate in synchronization with each other by using the link section, except for the second south bridge.

Abstract translation: 容错（FT）计算机系统包括主系统和辅助系统。 主系统包括第一CPU; 与第一CPU连接的第一FT控制部; 以及与第一FT控制部分电连接和可操作地连接的第一南桥。 辅助系统包括第二CPU; 与第二CPU连接的第二FT控制部; 以及与第二FT控制部分电连接并且不与第二FT控制部分可操作地连接的第二南桥。 第一FT控制部分和第二FT控制部分通过链接部分连接，并且主系统和辅助系统通过使用除了第二个南桥之外的链接部分彼此同步地进行操作。

公开(公告)号：US20050227073A1

公开(公告)日：2005-10-13

申请号：US10820024

申请日：2004-04-08

Applicant: Masaaki Oyamada ,  Shinji Abe ,  Akihiro Kawazoe

Inventor： Masaaki Oyamada ,  Shinji Abe ,  Akihiro Kawazoe

IPC: B22F1/02 ,  B22F9/24 ,  B32B15/02 ,  C23C18/16 ,  C23C18/18 ,  C23C18/36 ,  C23C18/44

CPC classification number: C23C18/44 ,  B22F1/025 ,  B22F9/24 ,  C23C18/1635 ,  C23C18/1831 ,  C23C18/1879 ,  C23C18/30 ,  C23C18/36 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2998

Abstract: A conductive electroless plated powder includes core particles and a nickel film formed by an electroless plating process on the surface of each core particle, wherein crystal grain boundaries in the nickel film are primarily oriented in the direction of the thickness of the nickel film. An electroless gold plating film may be deposited on the nickel film as the top layer. The nickel film is formed by electroless plating using glycine or ethylenediamine as a complexing agent.

Abstract translation: 导电性无电解电镀粉末包括芯颗粒和通过化学镀处理在每个芯颗粒的表面上形成的镍膜，其中镍膜中的晶粒边界主要沿镍膜厚度的方向取向。 作为顶层，可以在镍膜上沉积化学镀金膜。 通过使用甘氨酸或乙二胺作为络合剂的无电镀形成镍膜。

公开(公告)号：US06228480B1

公开(公告)日：2001-05-08

申请号：US08981303

申请日：1998-03-18

Applicant: Nubuo Kimura ,  Shinji Abe ,  Tetsuo Yoshimoto ,  Shigemichi Fukayama

Inventor： Nubuo Kimura ,  Shinji Abe ,  Tetsuo Yoshimoto ,  Shigemichi Fukayama

IPC: B01J3502

CPC classification number: B01J37/036 ,  B01J35/002 ,  B01J35/004 ,  B01J37/0219 ,  B01J37/0225 ,  C03C17/42 ,  C03C2217/445 ,  C03C2217/45 ,  C03C2217/477 ,  C03C2217/478 ,  C03C2217/71 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/258 ,  Y10T428/259 ,  Y10T428/31612 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: The present invention provides a photocatalyst-carrying structure which has a structure, wherein an adhesive layer is provided in between a photocatalyst layer and a substrate, the adhesive layer is composed of silicon-modified resin, polysiloxane-containing resin or colloidal silica-containing resin, and for forming the photocatalyst layer a composition comprising a metal oxide gel or a metal hydroxide gel and a photocatalyst is used. Further, the present invention also provides a photocatalyst coating agent for producing a photocatalyst-carrying structure which contains silicon compound, at least one metal oxide sol or metal hydroxide sol, and at least one photocatalyst powder or sol.

Abstract translation: 本发明提供一种具有结构的光催化剂载体结构，其中粘合剂层设置在光催化剂层和基材之间，粘合剂层由硅改性树脂，含聚硅氧烷的树脂或含胶体二氧化硅的树脂 并且为了形成光催化剂层，使用包含金属氧化物凝胶或金属氢氧化物凝胶和光催化剂的组合物。 此外，本发明还提供了一种用于制造含有硅化合物，至少一种金属氧化物溶胶或金属氢氧化物溶胶以及至少一种光催化剂粉末或溶胶的光催化剂载体结构的光催化剂涂覆剂。