公开(公告)号：US07083701B2

公开(公告)日：2006-08-01

申请号：US10296619

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

摘要翻译： 在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成 波长延迟板（18）。 波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。

公开(公告)号：US20060150914A1

公开(公告)日：2006-07-13

申请号：US10545355

申请日：2004-02-20

申请人： Naoko Yamamoto ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Naoko Yamamoto ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： A plasma processing apparatus includes: a processing chamber; an inlet waveguide having an interior space in which a first standing wave of a microwave is formed by means of resonance; a dielectric within which a second standing wave of the microwave is formed by means of resonance; and a slot antenna having a slot through which the microwave is passed from the interior space to the dielectric. The slot is generally located at a point where the position of a loop in the first standing wave orthogonally projected to the slot antenna coincides with the position of a loop in the second standing wave orthogonally projected to the slot antenna. The present invention provides a plasma processing apparatus that improves the propagation efficiency of a microwave passed through an aperture of the slot antenna, thereby allowing microwave energy to be efficiently introduced into a processing chamber.

摘要翻译： 一种等离子体处理装置，包括：处理室; 具有通过谐振形成微波的第一驻波的内部空间的入口波导; 通过谐振形成微波的第二驻波的电介质; 以及具有狭槽的缝隙天线，微波从该槽从内部空间通过电介质。 槽通常位于正交投影到缝隙天线的第一驻波中的环的位置与正交投影到缝隙天线的第二驻波中的环的位置重合的点。 本发明提供一种等离子体处理装置，其提高通过缝隙天线的孔径的微波的传播效率，从而使微波能量被有效地引入处理室。

公开(公告)号：US20050250338A1

公开(公告)日：2005-11-10

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/316

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US06896490B2

公开(公告)日：2005-05-24

申请号：US10817938

申请日：2004-04-06

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： F04D19/04 ,  F04D25/00 ,  F04B5/00

CPC分类号： F04D19/04 ,  F04D25/00

摘要： The present invention provides a vacuum apparatus that includes a plurality of vacuum containers each having a gas inlet and an exhaust outlet, a gas supply system for introducing a desired gas into each of the vacuum containers through the gas inlet, and an exhaust system for keeping each of the vacuum containers at a low pressure. In this vacuum apparatus, the exhaust system includes a plurality of multistage vacuum pumps connected in series. The exhaust outlet pressure of the last-stage vacuum pump is substantially at atmospheric pressure. The last-stage vacuum pump is designed to exhaust gas from a plurality of vacuum pumps at previous stages.

摘要翻译： 本发明提供一种真空装置，其包括多个真空容器，每个真空容器均具有气体入口和排气出口，用于通过气体入口将期望气体引入每个真空容器中的气体供给系统，以及用于保持 每个真空容器处于低压下。 在这种真空装置中，排气系统包括串联连接的多个多级真空泵。 最后一级真空泵的排气出口压力基本上处于大气压。 最后阶段的真空泵设计用于在以前的阶段从多个真空泵排出气体。

公开(公告)号：US06719875B1

公开(公告)日：2004-04-13

申请号：US09365923

申请日：1999-08-03

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Ryu Kaiwara ,  Kazuhide Ino

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Ryu Kaiwara ,  Kazuhide Ino

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32697

摘要： The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.

摘要翻译： 等离子体处理装置能够均匀化由此产生的等离子体的密度和与其相关联的自偏压。 该装置包括两个平行板电极I和II，电极I和II中的一个被配置为承载待等离子体处理的衬底。 该装置还包括一个磁场施加装置，用于将一个水平和一个方向的磁场施加到基板的表面。 设备的附加元件是位于电极I的周边周围并具有施加到其上的高频功率的单个辅助电极。 电极的对准使得它们限定了用于处理衬底的等离子体被激发的空间。

公开(公告)号：US06609564B2

公开(公告)日：2003-08-26

申请号：US10024928

申请日：2001-12-19

申请人： Takashi Imaoka ,  Hiroshi Morita ,  Isamu Sugiyama ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Takashi Imaoka ,  Hiroshi Morita ,  Isamu Sugiyama ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： G05D2300

CPC分类号： C02F1/70 ,  C02F5/00 ,  F28D2021/0019 ,  F28F19/00

摘要： A heat exchange cooling system for cooling an object of heat exchange such as machinery, air, or liquid is provided. The system includes a heat exchanger, a cooling water supply device, cooling water circulation piping, a flow rate adjustment valve, a cooling water supply system, and a controller for controlling the flow rate of cooling water. The system includes separate loops for the circulation piping and the cooling supply system. The separate loops are coupled to one another at an inlet and an outlet of the system.

摘要翻译： 提供了用于冷却诸如机械，空气或液体的热交换对象的热交换冷却系统。 该系统包括热交换器，冷却水供应装置，冷却水循环管道，流量调节阀，冷却水供应系统和用于控制冷却水流量的控制器。 该系统包括用于循环管道和冷却供应系统的单独回路。 单独的环在系统的入口和出口处彼此联接。

公开(公告)号：US20130140984A1

公开(公告)日：2013-06-06

申请号：US13809990

申请日：2011-07-14

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32532 ,  H01J37/32577

摘要： A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100; a waveguide path 205, connected to the first coaxial waveguide 225, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.

摘要翻译： 等离子体处理装置可以在大的衬底上激发均匀的等离子体。 等离子体处理装置10包括真空室100，其中具有构造成安装基板G的安装台115和形成在其上产生等离子体的安装台上方的等离子体空间; 第一同轴波导225，其中用于激发等离子体的高频功率被供应到真空室100中; 连接到第一同轴波导225的波导路径205具有朝向等离子体空间的狭缝形开口; 以及调整单元，被配置为调节在所述狭缝状开口的长度方向上在所述波导路径中传播的高频功率的波长。 通过调整在波导路径中传播的高频功率的波长被充分延长，可以在大的衬底上激发均匀的等离子体。

公开(公告)号：US08092642B2

公开(公告)日：2012-01-10

申请号：US12392133

申请日：2009-02-25

申请人： Toshiaki Hongo ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Toshiaki Hongo ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/3222

摘要： Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same.

摘要翻译： 提供一种能够通过防止狭缝天线中的电流的不均匀性而产生均匀等离子体的等离子体处理装置。 电介质板被设置为封闭板盖的顶部开口，并且用于产生等离子体的缝隙天线设置在电介质板上。 通过使用具有弹性的导电构件，允许缝隙天线的外周与板盖的内壁部直接接触，当向缝隙天线供给微波时，可以在内侧 处理容器的壁部分和平板天线的外周在处理容器的整个圆周上的任何点处基本相同，使得可以使在缝隙天线中流动的微波电流的大小大致相同。

公开(公告)号：US20110303364A1

公开(公告)日：2011-12-15

申请号：US13145398

申请日：2009-11-02

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/50 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H05H1/46 ,  H05H2001/4622

摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

公开(公告)号：US20110180213A1

公开(公告)日：2011-07-28

申请号：US12997211

申请日：2009-06-03

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/08 ,  H05H1/24 ,  C23C16/455 ,  C23C16/50

CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32449

摘要： A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.

摘要翻译： 主气体通道和多个分支气体通道的气体导通率之间的比率增加。 等离子体处理装置是用于通过激励气体等离子体处理待处理物体的装置，并且包括处理容器; 用于供应所需气体的气体供应源; 分配从气体供给源供给的气体的主气体通路; 多个分支气体通道，连接到主气体通道的下游侧; 多个节流部，形成在所述多个分支气体通路上，以使所述分支气体通道变窄; 和每个分支气体通道中的一个，两个或更多个排气孔，用于将已经通过形成在多个分支气体通道上的多个节气门部分的气体排放到处理容器中。