摘要:
A semiconductor device having a first circuit block supplied with a first operating voltage, a second circuit block supplied with a second operating voltage, a voltage generating circuit for generating a third operating voltage in response to the first operating voltage, and a third circuit block supplied with the third operating voltage. Preferably, the third operating voltage is generated such that the first operating voltage is increased to a fourth operating voltage by a voltage-up converter, and then the fourth operating voltage is dropped to the third operating voltage by a voltage down-converter. Hence, a power supply operating internally stably in spite of use of a relatively fluctuating voltage can be provided even in the case where a power-supply voltage is dropped.
摘要:
By means of a power-saving function in the information processing device to be tested, the motor in the HDD (Hard Disk Drive) is stopped by the testing program, when the information processing device is transported. Thus, the read/write head in the HDD is automatically set to a safe position.
摘要:
A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.
摘要:
A RAM mounted so as to mix with logic circuits has a plurality of memory mats and one control circuit provided for the plurality of memory mats. Arithmetic circuits for respectively performing +1 or -1 arithmetic operations are respectively provided so as to correspond to the respective memory mats and are electrically connected in cascade form. An input terminal of the initial-stage arithmetic circuit is supplied with address-setting fixed address signals. Input signals supplied to the next and subsequent arithmetic circuits or signals outputted therefrom are defined as own-assigned address signals (those assigned to the corresponding memory mats). A comparator provided in association with each arithmetic circuit referred to above makes comparisons for coincidence between the address signals and address signals input upon memory access. The corresponding memory mat is selected based on the resultant coincidence signal.
摘要:
A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.
摘要:
The semiconductor device comprises a substrate, a channel layer formed on the substrate, a first barrier layer formed on the channel layer, being an indirect transition semiconductor layer containing Al and P and being not lattice-matched with the substrate, and an electrode formed above the first barrier layer. The first barrier layer having a wide band gap and having a high barrier to electrons is formed below the electrodes, whereby a high gate turn-on voltage can be available.
摘要:
In a distributed database system including a plurality of database systems each having a database, wherein a database possessed by one of the database systems serves as an original database, and databases of the remaining database systems are produced by replicating the original database, the presence or absence of update contention of the same data in two database systems is detected. When data susceptible to detection of update contention is updated, an update serial number is produced for the data. The update serial number includes a system identifier for identifying a database system in which the data is updated and an update frequency related to the number of times of updates. The update serial number is accumulatively stored in an update serial number history associated with the data each time the data is updated. When the updated data and the update serial number history associated therewith are transferred to a receiving database system, the contents of the update serial number history associated with the received data is compared with the contents of an update serial number history associated with data corresponding to the received data (target data) in a database of the receiving database system, and a contending state of the received data with the target data is determined based on the result of the comparison in the receiving database system.
摘要:
An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
摘要:
A light intercepting mechanism of a zoom lens barrel includes a movable lens frame which holds a frontmost lens group, and a drive ring which is fitted on an outer peripheral surface of the movable lens frame to relatively rotate, so that when the relative rotation of the drive ring occurs, the movable lens frame is moved in the optical axis direction. The movable lens frame has a dual-cylinder structure having a closed front end and an open rear end. The drive ring has a dual-cylinder structure having a closed rear end and an open front end. The movable lens frame having the dual-cylinder structure and the drive ring having the dual-cylinder structure are fitted one inside the each other.
摘要:
A push-pull type output circuit is used in the differential amplifier of a voltage converter circuit. The threshold voltage of the driving transistor is set lower than the voltages of the transistors of the other circuits to operate the differential amplifier at a voltage higher than the power supply voltage. By using the push-pull type output circuit, the amplitude increases and it is possible to raise the capacity of the driving transistor. Moreover, by setting the threshold voltage of the driving transistor of the buffering circuit lower than the threshold voltages of the transistors of the other circuits, it is possible to further raise the driving capacity. Increase of the sub-threshold current due to lowering of the threshold voltage can be prevented by operating the differential amplifier at a voltage higher than the power supply voltage.