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公开(公告)号：US07827722B1
公开(公告)日：2010-11-09
申请号：US11454589
申请日：2006-06-16
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A21/00
摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
摘要翻译： 具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。 操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。 当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。 螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。 该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。 部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。 活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。
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公开(公告)号：US07464496B1
公开(公告)日：2008-12-16
申请号：US11442035
申请日：2006-05-26
申请人： Robert B. Davies , Frank Desomma
发明人： Robert B. Davies , Frank Desomma
IPC分类号： F41A21/48
CPC分类号： F41A21/482 , F41A21/24
摘要： A barrel nut for coupling a barrel of a firearm to a receiver includes a body having a first end, an opposing second end, and an outer surface. A bore extends centrally through the body from the first end to the second end. A plurality of heat conducting fins extends radially outwardly from the outer surface of the body. A fastening element fastens the breach end of the barrel nut to the receiver.
摘要翻译： 用于将枪管连接到接收器的桶形螺母包括具有第一端，相对的第二端和外表面的本体。 孔从第一端至第二端中心延伸穿过主体。 多个导热翅片从主体的外表面径向向外延伸。 紧固元件将筒形螺母的突出端紧固到接收器。
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公开(公告)号：US07078784B2
公开(公告)日：2006-07-18
申请号：US10859674
申请日：2004-06-03
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： H01L29/00
CPC分类号： H01L28/10 , H01F17/0006 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
摘要翻译： 集成电路（10）包括具有用于形成具有沟槽（40）和一个或多个相邻空腔（16）的电介质区域（14）的顶表面（32）的半导体衬底（11）。 诸如铜的导电材料设置在沟槽内以产生电感器（50）。 电感器的顶表面（49）与半导体衬底的互连表面（31）基本上共面，这便于利用标准集成电路金属化（57）连接到电感器。
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公开(公告)号：US06939788B2
公开(公告)日：2005-09-06
申请号：US10279700
申请日：2002-10-24
申请人： Robert B. Davies
发明人： Robert B. Davies
CPC分类号： H01L28/10 , H01F17/0006 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
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公开(公告)号：US06694660B1
公开(公告)日：2004-02-24
申请号：US10105700
申请日：2002-03-25
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A2100
CPC分类号： F41G11/003 , F41A21/482 , F41C23/16
摘要： A handguard system for use on a rifle having a barrel and a receiver, the hand guard system includes a barrel nut having an inner surface with a threaded portion adapted to threadably engage the receiver for securing the barrel to the receiver and an outer surface, and a tubular handguard having an end. The tubular handguard is receivable about the barrel and is received about the barrel nut, engaging the outer surface thereof.
摘要翻译： 一种用于具有镜筒和接收器的步枪的护手系统，所述护手系统包括镜筒螺母，所述枪管螺母具有内表面，所述内表面具有螺纹部分，所述螺纹部分适于螺纹接合所述接收器以将所述镜筒固定到所述接收器和外表面，以及 具有末端的管状护手。 管状护手可以围绕枪管接收并且被容纳在与其外表面接合的枪管螺母周围。
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公开(公告)号：US06197640B1
公开(公告)日：2001-03-06
申请号：US09217120
申请日：1998-12-21
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： H01L21336
CPC分类号： H01L29/7802 , H01L21/2815 , H01L29/0847 , H01L29/402 , H01L29/41741 , H01L29/42376 , H01L29/66712 , H01L29/7813
摘要： A method of manufacturing a semiconductor component includes providing a semiconductor substrate (200) having top and bottom surfaces, forming a drain electrode (160) at the bottom surface of the semiconductor substrate (200), and simultaneously forming source and gate electrodes (251, 254, 255, 253) at the first surface of the semiconductor substrate (200).
摘要翻译： 一种制造半导体部件的方法包括提供具有顶表面和底表面的半导体衬底（200），在半导体衬底（200）的底表面处形成漏电极（160），同时形成源电极和栅极（251， 254,255,253）在半导体衬底（200）的第一表面处。
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公开(公告)号：US5927993A
公开(公告)日：1999-07-27
申请号：US829660
申请日：1992-02-03
IPC分类号： H01L21/301 , H01L21/78
CPC分类号： H01L21/78
摘要： A method useful in the backside processing of semiconductor wafers includes providing a semiconductor wafer having a first surface that has been substantially processed. The processed first surface of the semiconductor wafer is bonded to a handle wafer. Once bonded to the handle wafer, backside processing may be performed on the wafer. Following backside processing, the wafer is sawn while still bonded to the handle wafer. The individual dice are then removed from the handle wafer. This process involves fewer handling steps of the semiconductor wafer and the handle wafer provides support to the semiconductor wafer during backside processing thereby reducing opportunities for breakage.
摘要翻译： 在半导体晶片的背面处理中有用的方法包括提供具有基本上被处理的第一表面的半导体晶片。 半导体晶片的经处理的第一表面被结合到处理晶片。 一旦结合到处理晶片，可以在晶片上执行背面处理。 在背面处理之后，晶片被锯切，同时仍然结合到处理晶片。 然后将单个骰子从处理晶片上移除。 该方法涉及较少的半导体晶片的处理步骤，并且该手柄晶片在背面处理期间为半导体晶片提供支撑，从而减少破损的机会。
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38.发明授权
公开(公告)号：US5920102A
公开(公告)日：1999-07-06
申请号：US867663
申请日：1997-05-30
CPC分类号： H01L27/0629
摘要： A semiconductor device (10) is formed in a pedestal structure (16) overlying an epitaxial layer (12) and a semiconductor substrate (11). The semiconductor device (10) includes a doped region (13) that forms a PN junction with the epitaxial layer (12). The semiconductor device (10) also includes a dielectric layer (22) that has an opening (23) that exposes a portion of the doped region (13) and an opening (24) that exposes a portion of the epitaxial layer (12). The openings (23, 24) are filled with a conductive material (36, 37) to provide contacts (100, 101). Due to the presence of the PN junction, the contacts (100, 101) are capacitively coupled to each other.
摘要翻译： 半导体器件（10）形成在覆盖外延层（12）和半导体衬底（11）的基座结构（16）中。 半导体器件（10）包括与外延层（12）形成PN结的掺杂区域（13）。 半导体器件（10）还包括具有露出掺杂区域（13）的一部分的开口（23）和露出外延层（12）的一部分的开口（24）的电介质层（22）。 开口（23,24）填充有导电材料（36,37）以提供触点（100,101）。 由于PN结的存在，触点（100,101）彼此电容耦合。
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公开(公告)号：US5818098A
公开(公告)日：1998-10-06
申请号：US608864
申请日：1996-02-29
IPC分类号： H01L21/336 , H01L21/762 , H01L21/8234 , H01L29/10 , H01L29/417 , H01L29/423 , H01L23/58
CPC分类号： H01L29/41725 , H01L21/762 , H01L21/823412 , H01L29/1083 , H01L29/1087 , H01L29/66621 , H01L29/78 , H01L29/66537
摘要： A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60, 97) that can be used to transport electrical signals across the device (10).
摘要翻译： 梯形通道半导体器件（10）形成在基座（12）中。 与传统的装置结构相比，底座（12）形成在基板（11）上并改善了装置（10）的电气特性。 基座（12）具有由第一介电层（24）邻接以提供电隔离的侧面（13）。 互连结构（90）可以可选地与装置（10）的形成一起形成。 互连结构（90）具有多个导体（60,97），可用于传输电信号跨过装置（10）。
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公开(公告)号：US5510648A
公开(公告)日：1996-04-23
申请号：US301999
申请日：1994-09-07
申请人： Robert B. Davies , Peter J. Zdebel , Juan Buxo
发明人： Robert B. Davies , Peter J. Zdebel , Juan Buxo
IPC分类号： H01L21/336 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/36 , H01L29/167
CPC分类号： H01L29/66583 , H01L29/1045 , H01L29/42368 , H01L29/4933 , H01L29/4983 , H01L29/66659 , H01L29/7835 , H01L29/7836 , Y10S257/90
摘要： An insulated gate semiconductor device (10) having a pseudo-stepped channel region (20B) between two P-N junctions (21B and 22B). The pseudo-stepped channel region (20B) is comprised of an enhancement mode portion (26B) and a depletion mode portion (28B), the enhancement mode portion (26B) being more heavily doped than the depletion mode portion (28B). One P-N junction (21B) is formed at an interface between a source region (18B) and the enhancement mode portion (26B). The enhancement mode portion (26B) has a substantially constant doping profile, thus slight variations in the placement of the source region (18B) within the enhancement region (26B) do not result in significant variations in the threshold voltage of the insulated gate semiconductor device (10). The insulated gate semiconductor device (10) is well suited for the design of low voltage circuits because of the small variations of the threshold voltage.
摘要翻译： 一种在两个P-N结（21B和22B）之间具有伪步进沟道区（20B）的绝缘栅半导体器件（10）。 伪阶梯通道区域（20B）包括增强模式部分（26B）和耗尽模式部分（28B），增强模式部分（26B）比耗尽模式部分（28B）更重掺杂。 一个P-N结（21B）形成在源极区（18B）和增强模式部分（26B）之间的界面处。 增强模式部分（26B）具有基本上恒定的掺杂分布，因此源区域（18B）在增强区域（26B）内的布置的轻微变化不会导致绝缘栅极半导体器件的阈值电压的显着变化 （10）。 绝缘栅极半导体器件（10）由于阈值电压的变化小而非常适合设计低电压电路。
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