公开(公告)号：US07935942B2

公开(公告)日：2011-05-03

申请号：US11504367

申请日：2006-08-15

Applicant: Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

Inventor： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

IPC: H01J37/00

CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中 冷却晶片进行离子注入工艺。

公开(公告)号：US07820527B2

公开(公告)日：2010-10-26

申请号：US12119170

申请日：2008-05-12

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

Abstract translation: 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从植入半导体材料的一种或多种离子物质的空间变化剂量产生的剂量梯度的函数。

公开(公告)号：US20090162953A1

公开(公告)日：2009-06-25

申请号：US11961157

申请日：2007-12-20

Applicant: Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

Inventor： Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

IPC: H01L21/66 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.

Abstract translation: 描述了用于预测离子注入中的剂量重复性的方法。 在一个实施例中，调节离子源以产生具有期望的束电流的离子束。 光束电流测量从调谐离子束获得。 作为束电流测量的函数，预测离子注入的剂量重复性。

公开(公告)号：US20090078871A1

公开(公告)日：2009-03-26

申请号：US11860696

申请日：2007-09-25

Applicant: Steven R. Walther ,  Harold M. Persing

Inventor： Steven R. Walther ,  Harold M. Persing

IPC: G01J5/10 ,  G01F1/00

CPC classification number: H01L21/67253

Abstract: A workpiece processing system includes a platen configured to support a workpiece, a source configured to provide an electromagnetic wave proximate a front surface of the workpiece, and a detector. The detector is configured to receive at least a portion of the electromagnetic wave and provide a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts. A method of detecting an outgassing rate is also provided. The method includes providing an electromagnetic wave proximate a front surface of a workpiece, receiving at least a portion of the electromagnetic wave, and providing a detection signal representative of an outgassing rate from the workpiece of outgassing byproducts.

Abstract translation: 工件处理系统包括被配置为支撑工件的压板，被配置为提供靠近工件的前表面的电磁波的源和检测器。 检测器被配置为接收电磁波的至少一部分并且提供表示来自除气副产物的工件的除气速率的检测信号。 还提供了一种检测排气速率的方法。 该方法包括在工件的前表面附近提供电磁波，接收电磁波的至少一部分，以及提供代表来自除气副产物的工件的除气速率的检测信号。

公开(公告)号：US20090008577A1

公开(公告)日：2009-01-08

申请号：US11774587

申请日：2007-07-07

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: H01J37/32

CPC classification number: H01J37/32339 ,  H01J37/32412

Abstract: A plasma doping apparatus includes a plasma source that generates a pulsed plasma. A platen supports a substrate proximate to the plasma source for plasma doping. A structure absorbs a film which provides a plurality of neutrals when desorbed. A bias voltage power supply generates a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A radiation source irradiates the film absorbed on the structure, thereby desorbing the film and generating a plurality of neutrals that scatter ions from the plasma while the ions are being attracted to the substrate, thereby performing conformal plasma doping.

Abstract translation: 等离子体掺杂装置包括产生脉冲等离子体的等离子体源。 压板支撑靠近等离子体源的基板用于等离子体掺杂。 结构吸收当解吸时提供多个中性粒子的膜。 偏置电压电源产生具有负电位的偏压电压波形，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 辐射源照射吸收在结构上的膜，从而解离该膜并产生多个中和体，其中离子从等离子体中散射，同时离子被吸引到衬底上，由此进行保形等离子体掺杂。

公开(公告)号：US20080044938A1

公开(公告)日：2008-02-21

申请号：US11504367

申请日：2006-08-15

Applicant: Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

Inventor： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

IPC: H01L21/00

CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站， 冷却晶片进行离子注入工艺。

公开(公告)号：US07132672B2

公开(公告)日：2006-11-07

申请号：US10817755

申请日：2004-04-02

Applicant: Steven R. Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn O. Pedersen ,  Chris Leavitt ,  Timothy Miller

Inventor： Steven R. Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn O. Pedersen ,  Chris Leavitt ,  Timothy Miller

IPC: H01J37/244

CPC classification number: H01J37/32963 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/24405

Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

Abstract translation: 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

公开(公告)号：US12290697B2

公开(公告)日：2025-05-06

申请号：US17246653

申请日：2021-05-02

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: A61B18/00 ,  A61B18/04 ,  A61B18/12 ,  A61B18/18 ,  A61L2/00 ,  A61L2/24 ,  A61N1/40 ,  A61N1/44 ,  H05H1/00 ,  H05H1/24 ,  H05H1/46

Abstract: Disclosed is a system and method for delivering reactive species from a plasma to a treatment area by scanning a linear array of stacked plasma elements across the treatment area. Reactive species output from each plasma element is calibrated, and during scanning each plasma element is modulated with a uniformity modulation and a dose modulation, enabling a predetermined contour dose distribution of reactive species to be delivered to the treatment area.

公开(公告)号：US20210339034A1

公开(公告)日：2021-11-04

申请号：US17246653

申请日：2021-05-02

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: A61N1/44 ,  A61B18/04 ,  A61B18/18 ,  A61N1/40 ,  A61L2/00 ,  A61L2/24 ,  H05H1/00 ,  H05H1/24 ,  H05H1/46

Abstract: Disclosed is a system and method for delivering reactive species from a plasma to a treatment area by scanning a linear array of stacked plasma elements across the treatment area. Reactive species output from each plasma element is calibrated, and during scanning each plasma element is modulated with a uniformity modulation and a dose modulation, enabling a predetermined contour dose distribution of reactive species to be delivered to the treatment area.

公开(公告)号：US20130009077A1

公开(公告)日：2013-01-10

申请号：US13618682

申请日：2012-09-14

Applicant: Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

Inventor： Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

IPC: G21K1/00 ,  B32B37/14

CPC classification number: G21K5/00 ,  H01J5/18 ,  H01J33/04 ,  H01J2237/164 ,  Y10T156/10

Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.

Abstract translation: 出口窗口可以包括出口窗口箔片和支撑出口窗口箔片的支撑格栅。 支撑格栅可以具有第一和第二格栅，每个栅格具有相互对准的第一和第二格栅部分，并且彼此热隔离。 第一和第二格栅部分可以各自具有一系列孔，其被对准以允许梁通过其到达并通过出射窗箔。 第二格栅部分可以接触出口窗箔。 第一格栅部分可以掩蔽第二格栅部分和出射窗箔，以防止由射束撞击第一格栅部分引起的热量。