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83 条记录 (耗时 0.041 秒)

    BIT PATTERNED MEDIUM
    35.
    发明申请
    BIT PATTERNED MEDIUM 有权
    位图形图

    公开(公告)号：US20090059429A1

    公开(公告)日：2009-03-05

    申请号：US12127390

    申请日：2008-05-27

    申请人： Hoo-san Lee ,  Sung-Chul Lee ,  Hoon-Sang Oh

    发明人： Hoo-san Lee ,  Sung-Chul Lee ,  Hoon-Sang Oh

    IPC分类号： G11B5/82

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

    摘要： Provided is a bit patterned medium including bridges which induce exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The bridges and the bits are integrally formed with each other. The bits are locally connected by the bridges. A magnetostatic force for each bit is reduced due to an exchange coupling between adjacent bits, thereby reducing a switching field distribution of the bits.

    摘要翻译： 提供了包括桥的位图案化介质，其引起相邻位之间的交换耦合，以便减少由位的不同磁化方向引起的开关场差。 桥和钻头彼此一体形成。 这些位由桥接器本地连接。 由于相邻位之间的交换耦合，每个位的静磁力减小，从而减小位的开关场分布。

    Fuel cell system
    37.
    发明申请
    Fuel cell system 有权
    燃料电池系统

    公开(公告)号：US20070202368A1

    公开(公告)日：2007-08-30

    申请号：US11711010

    申请日：2007-02-27

    申请人： Ju-Yong Kim ,  Sung-Chul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim

    发明人： Ju-Yong Kim ,  Sung-Chul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim

    IPC分类号： H01M8/06

    CPC分类号： H01M8/0618 ,  H01M8/04014 ,  H01M8/1004 ,  H01M8/2475 ,  H01M2008/1095 ,  H01M2250/30 ,  Y02B90/18

    摘要： A fuel cell system includes a fuel cell body to generate electrical energy using a reaction of hydrogen and oxygen; a reformer to generate a reformed gas containing hydrogen by reforming fuel and to supply the reformed gas to the fuel cell body; a fuel tank to store the fuel in a partially liquefied state and to supply the fuel to the reformer; a case to encase the fuel cell body and the reformer; and a refrigeration unit attached to the case to store ambient air of the fuel tank, the ambient air of the fuel tank being cooled by latent heat of vaporization of the fuel.

    摘要翻译： 燃料电池系统包括使用氢和氧的反应产生电能的燃料电池体; 重整器，通过重整燃料生成含氢气的重整气体，并向燃料电池体供给重整气体; 燃料箱，用于储存处于部分液化状态的燃料并将燃料供应至重整器; 封装燃料电池体和重整器的情况; 以及附接到壳体以储存燃料箱的环境空气的制冷单元，燃料箱的环境空气被燃料的蒸发潜热所冷却。

    Semiconductor memory device and fabrication method thereof
    39.
    发明授权
    Semiconductor memory device and fabrication method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US06479346B1

    公开(公告)日：2002-11-12

    申请号：US09544214

    申请日：2000-04-07

    申请人： Sang-Bai Yi ,  Jae-Min Yu ,  Sung-Chul Lee

    发明人： Sang-Bai Yi ,  Jae-Min Yu ,  Sung-Chul Lee

    IPC分类号： H01L21336

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11539 ,  Y10S257/903

    摘要： In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

    摘要翻译： 在包括存储单元和外围电路单元的半导体存储器件中，存储单元具有形成在半导体衬底上的第一栅极结构; 第一导电类型的第一杂质区域形成在栅极结构的第一侧上的衬底中; 以及形成在所述栅极结构的第二侧上的所述衬底中的第二杂质区域，所述第二杂质区域包括：第一导电类型的第三杂质区域，第三杂质区域和第三杂质区域之间的第一导电类型的第四杂质区域， 栅极结构的第二侧和与第四杂质区相邻形成的第二导电类型的晕圈离子区。

    Semiconductor apparatus capable of error revision using pin extension technique and design method therefor
    40.
    发明授权
    Semiconductor apparatus capable of error revision using pin extension technique and design method therefor 有权
    能够使用引脚扩展技术进行错误修正的半导体装置及其设计方法

    公开(公告)号：US08689163B2

    公开(公告)日：2014-04-01

    申请号：US12928021

    申请日：2010-12-01

    申请人： Dong-Yun Kim ,  Dong-Hoon Yeo ,  Hyun-Chul Shin ,  Kyung-Ho Kim ,  Byung-Tae Kang ,  Ju-Yong Shin ,  Sung-Chul Lee

    发明人： Dong-Yun Kim ,  Dong-Hoon Yeo ,  Hyun-Chul Shin ,  Kyung-Ho Kim ,  Byung-Tae Kang ,  Ju-Yong Shin ,  Sung-Chul Lee

    IPC分类号： G06F17/50

    CPC分类号： H01L23/525 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.

    摘要翻译： 半导体装置的半导体装置和设计方法允许使用备用单元进行调试或维修。 半导体装置包括多个金属层。 至少一个修理块执行预定的功能。 备用块能够代替维修块的功能。 并且多个金属层中的至少一个被预先确定为用于错误修正的修复层。 修复块的至少一个销通过第一销延伸连接到修复层，并且备用块的至少一个引脚能够延伸到修复层。 当修理修理块时，修理层和维修块的销延伸被断开，备用块的至少一个引脚通过第二个引脚延伸连接到修复层。