公开(公告)号：US20050069632A1

公开(公告)日：2005-03-31

申请号：US10673646

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  B05D5/12 ,  H01L21/4763

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/16 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

公开(公告)号：US08129271B2

公开(公告)日：2012-03-06

申请号：US12374216

申请日：2007-07-17

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

摘要翻译： 一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

公开(公告)号：US07790626B2

公开(公告)日：2010-09-07

申请号：US11577505

申请日：2005-10-18

申请人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/00

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/3471 ,  H01J37/34 ,  H01J2237/3327 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.

摘要翻译： 本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。 膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用 在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

公开(公告)号：US6126994A

公开(公告)日：2000-10-03

申请号：US907007

申请日：1997-08-06

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/203

CPC分类号： C23C16/4481 ,  Y10S427/101

摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

摘要翻译： 一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

公开(公告)号：US5690743A

公开(公告)日：1997-11-25

申请号：US496130

申请日：1995-06-27

申请人： Seishi Murakami ,  Tatsuo Hatano

发明人： Seishi Murakami ,  Tatsuo Hatano

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/203

CPC分类号： C23C16/4481 ,  Y10S427/101

摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

摘要翻译： 一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

公开(公告)号：US20100167540A1

公开(公告)日：2010-07-01

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768 ,  C23C14/34

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 公开了一种仅通过等离子体溅射将金属嵌入设置在诸如半导体晶片W的处理对象表面的凹部中的技术。 金属是铜，作为典型的例子。 该凹部具有作为典型实例的直径或宽度为100nm或更小的微孔或沟槽。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片W的载物台的偏置功率被设定为确保在晶片W的表面上由金属颗粒的吸入引起的金属沉积速率为 基本上等于通过等离子体的溅射蚀刻的速率。 在扩散步骤中，晶片W保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US20090183984A1

公开(公告)日：2009-07-23

申请号：US12223383

申请日：2007-01-26

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/046 ,  C23C14/345 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L2221/1089

摘要： The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

摘要翻译： 本发明涉及能够在不形成突出端的情况下在凹陷中形成种子膜的种子膜形成方法。 沉积用于电镀的种子膜的种子膜形成方法包括以下步骤：通过在能够被抽真空的处理容器中用等离子体电离金属靶产生金属离子; 以及通过向所述工件提供偏置功率以将金属离子吸引到所述工件上，在安装在放置在所述处理容器中的工作台上的工件的设置有凹部的表面上沉积金属膜; 其中，通过使用确定为使得沉积在所述工件的表面上的金属膜不会被溅射的偏置功率来沉积所述金属膜的膜沉积步骤，以及通过停止产生来中断所述金属膜的沉积的膜沉积中断步骤 金属离子交替重复多次。

公开(公告)号：US20090087583A1

公开(公告)日：2009-04-02

申请号：US12226610

申请日：2007-04-10

申请人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 34 disposed in a processing vessel 24 capable of being vacuumized. Thereafter, a plasma is generated in the processing vessel 24, so that a metal target 70 is ionized by the plasma to generate metal ions in the processing vessel 24. Then, a thin film is deposited on the surface of the object to be processed including a surface in the recess, by supplying a bias power to the stage 34 so as to draw the metal ions into the object to be processed placed on the stage 34 by the supplied bias power. In the present invention, a wattage of the bias power is varied within a range in which the surface of the object to be processed is not substantially sputtered.

摘要翻译： 将具有在其表面形成的凹部的待处理物体（例如，半导体晶片W）放置在能够被真空化的处理容器24中的台34上。 此后，在处理容器24中产生等离子体，使得金属靶70被等离子体离子化，以在处理容器24中产生金属离子。然后，在待处理物体的表面上沉积薄膜，其中包括 通过向台34提供偏置功率以便通过所提供的偏置功率将金属离子拉入放置在载物台34上的被处理物体中，从而在凹部中的表面。 在本发明中，偏置功率的功率在被处理物体的表面基本上不被溅射的范围内变化。

公开(公告)号：US20050233079A1

公开(公告)日：2005-10-20

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/18 ,  C23C16/02 ,  C23C16/16 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  C23C16/00 ,  H05H1/24

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US5989345A

公开(公告)日：1999-11-23

申请号：US069987

申请日：1998-04-30

申请人： Tatsuo Hatano

发明人： Tatsuo Hatano

IPC分类号： C23C14/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/4485 ,  C23C16/45561 ,  C23C16/52

摘要： A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least one gas storing section having a predetermined volume and to be filled with the process gas, a carrier-gas introducing pipe connecting the carrier gas source to the process chamber to introduce the carrier gas from the carrier gas source to the process chamber, a process-gas releasing pipe connected to the process-gas source, a process-gas filling circuit having at least one pipe which connects the at least one gas storing section to the process-gas releasing pipe and is provided with at least one open/shut valve, a process gas releasing circuit having at least one pipe which connects the gas storing section to the carrier-gas introducing pipe and is provided with at least one open/shut valve, a controlling section for controlling not only a communication state between the process-gas releasing pipe and the gas storing section but also a communication state between the carrier-gas introducing pipe and the gas storing section, by switchover of the open/shut valves attached to the process-gas filling circuit and the process gas releasing circuit.

摘要翻译： 一种处理气体供应装置，用于向处理室提供处理气体，其中使用处理气体的预定处理被施加到其中的物体，其包括用于提供处理气体的处理气体源，填充有载气源 具有载气，至少一个具有预定体积的气体储存部分并且被处理气体填充;载气引入管，其将载气源连接到处理室，以将载气从载气源引入到 处理室，连接到处理气体源的处理气体释放管，处理气体填充回路，其具有将至少一个气体存储部分连接到处理气体释放管的至少一个管道，并且设置在 至少一个打开/关闭阀，一个工艺气体释放回路，其具有至少一个管道，该管道将气体存储部分连接到载气引入管道，并且设有至少一个开/关阀 e，控制部分，用于不仅控制处理气体释放管和气体存储部之间的连通状态，而且还通过开/关阀的切换来控制载气导入管和气体存储部之间的连通状态 连接到处理气体填充回路和处理气体释放回路。