公开(公告)号：US11137672B2

公开(公告)日：2021-10-05

申请号：US16512795

申请日：2019-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue Lin

IPC: G03F1/24 ,  G03F1/48

Abstract: A method of forming a mask includes forming a reflective multilayer over a substrate; forming a capping layer over the reflective multilayer, in which the capping layer includes a ruthenium-containing material and a low carbon solubility material that has a carbon solubility lower than a carbon solubility of the ruthenium-containing material; forming an absorption layer over the capping layer; and etching the absorption layer until exposing the capping layer.

公开(公告)号：US11106127B2

公开(公告)日：2021-08-31

申请号：US15888633

申请日：2018-02-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin

IPC: G03F1/64 ,  G03F1/22

Abstract: Structures of a pellicle-mask structure are provided. The pellicle-mask structure includes a mask substrate, a pellicle frame over the mask substrate. The pellicle frame includes a side portion with an inside surface and an outside surface opposite to each other. The pellicle-mask structure also includes a vent structure in the side portion and connecting the inside surface and the outside surface, and a pellicle membrane over the pellicle frame. The pellicle-mask structure further includes a pellicle membrane adhesive between the pellicle membrane and the pellicle frame, and a first heat-dissipating filler in the pellicle membrane adhesive.

公开(公告)号：US11086215B2

公开(公告)日：2021-08-10

申请号：US16019754

申请日：2018-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsin-Chang Lee

IPC: G03F1/58 ,  G03F1/24 ,  G03F1/38 ,  G03F7/20

Abstract: A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.

公开(公告)号：US11016383B2

公开(公告)日：2021-05-25

申请号：US16427980

申请日：2019-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue Lin

IPC: G03F1/62 ,  G03F1/80 ,  G03F1/22

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

公开(公告)号：US10809613B2

公开(公告)日：2020-10-20

申请号：US16141719

申请日：2018-09-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue Lin

IPC: G03F1/48 ,  G03F1/22 ,  G03F1/76 ,  G03F1/54 ,  G03F7/038 ,  G03F7/039

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

公开(公告)号：US10353285B2

公开(公告)日：2019-07-16

申请号：US16010118

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang Lee ,  Pei-Cheng Hsu ,  Yun-Yue Lin ,  Hsuan-Chen Chen ,  Hsuan-I Wang ,  Anthony Yen

IPC: G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20

Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

公开(公告)号：US10162258B2

公开(公告)日：2018-12-25

申请号：US15381033

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsuan-Chen Chen ,  Chih-Cheng Lin ,  Hsin-Chang Lee ,  Yao-Ching Ku ,  Wei-Jen Lo ,  Anthony Yen ,  Chin-Hsiang Lin ,  Mark Chien

IPC: G03F1/24 ,  G03F1/62

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

公开(公告)号：US10012899B2

公开(公告)日：2018-07-03

申请号：US15356204

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Chue San Yoo ,  Jong-Yuh Chang ,  Chia-Shiung Tsai ,  Ping-Yin Liu ,  Hsin-Chang Lee ,  Chih-Cheng Lin ,  Yun-Yue Lin

IPC: G03F1/62 ,  G03F1/64 ,  H01L21/033 ,  C23C14/16 ,  C23C16/26 ,  C23C28/00 ,  C23C14/18

CPC classification number: G03F1/62 ,  C23C14/16 ,  C23C14/165 ,  C23C14/18 ,  C23C16/01 ,  C23C16/26 ,  C23C16/56 ,  C23C28/32 ,  G03F1/64 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.

公开(公告)号：US09360749B2

公开(公告)日：2016-06-07

申请号：US14260651

申请日：2014-04-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Yun-Yue Lin ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Anthony Yen

IPC: G03F1/62 ,  G03F1/64 ,  G03F1/00

CPC classification number: G03F1/62 ,  G03F1/142 ,  G03F1/64

Abstract: A pellicle structure, a pellicle-mask structure, and a method for forming the pellicle structure are provided. The pellicle structure includes a pellicle film made of a carbon-based material. In addition, the pellicle film is configured to protect a mask structure in a lithography process. The pellicle-mask structure includes a mask substrate having a mask pattern formed over the mask substrate and the pellicle frame disposed on the mask substrate. The pellicle-mask structure further includes the pellicle film disposed on the pellicle frame.

Abstract translation: 提供防护薄膜组件，防护薄膜组件，以及防护薄膜组件的形成方法。 防护薄膜组件包括由碳基材料制成的防护薄膜。 此外，防护薄膜被配置为在光刻工艺中保护掩模结构。 防护薄膜组件包括具有形成在掩模基板上的掩模图案和设置在掩模基板上的防护膜框架的掩模基板。 防护薄膜组件还包括设置在防护薄膜组件框架上的防护薄膜。

公开(公告)号：US09341937B2

公开(公告)日：2016-05-17

申请号：US14261809

申请日：2014-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Anthony Yen

IPC: G03B27/54 ,  G03F1/00 ,  G03F1/22 ,  G03F1/46

CPC classification number: G03F1/22 ,  G03F1/46

Abstract: A lithography system for an extreme ultra violet (EUV) mask is provided. The lithography system includes a coupling module. The coupling module includes at least one mask contact element configured to touch a peripheral area of the EUV mask. The lithography system also includes an ammeter having an end electrically connected to the EUV mask through the at least one mask contact element and another end connected to a ground potential. The ammeter includes a sensor configured to measure a current conducting from the EUV mask to the ground potential and a compensation circuit configured to provide a compensation current that is opposite to the current measured by the sensor.

Abstract translation: 提供了用于极紫外（EUV）掩模的光刻系统。 光刻系统包括耦合模块。 耦合模块包括被配置为触摸EUV掩模的外围区域的至少一个掩模接触元件。 光刻系统还包括电流表，其具有通过至少一个掩模接触元件电连接到EUV掩模的端部，另一端连接到接地电位。 电流表包括传感器，其被配置为测量从EUV掩模传导到地电位的电流;以及补偿电路，其被配置为提供与由传感器测量的电流相反的补偿电流。