公开(公告)号：US5141885A

公开(公告)日：1992-08-25

申请号：US709495

申请日：1991-06-03

申请人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Takashi Hirao

发明人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Takashi Hirao

IPC分类号： H01L29/78 ,  H01L21/223 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/2236 ,  H01L29/78669

摘要： A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.

摘要翻译： 在半导体薄层的沟道区域或半导体薄层与栅极绝缘层之间的边界处，但具有高移动性和高集成度的绝缘基板（例如石英或玻璃等）的绝缘基板上制造薄膜晶体管的方法。 为此，通过包括掺杂剂的氢化物气体的放电分解产生的离子被加速并注入到半导体薄层中，其中用于保护沟道区的保护绝缘层的厚度大于氢的投影范围 离子。

公开(公告)号：US4185291A

公开(公告)日：1980-01-22

申请号：US916818

申请日：1978-06-16

申请人： Takashi Hirao ,  Shigetoshi Takayanagi ,  Takeshi Onuma ,  Toshio Sugawa ,  Kaoru Inoue

发明人： Takashi Hirao ,  Shigetoshi Takayanagi ,  Takeshi Onuma ,  Toshio Sugawa ,  Kaoru Inoue

IPC分类号： H01L29/80 ,  H01L21/265 ,  H01L21/337 ,  H01L29/808

CPC分类号： H01L29/808

摘要： A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.

摘要翻译： 包括第一导电类型的半导体衬底21和包括沟道区并且选择性地形成在半导体衬底21中的第二导电类型的岛状区域22的结型FET，以及选自 由第二导电类型的本征层，低杂质浓度层和第一导电类型的层组成的组，所述掩埋隔离层通过在岛状区域22中离子注入第一导电类型的杂质而形成，同时保持 表面上的杂质浓度相对较高，并且掩埋隔离层基本上使沟道区域与表面隔离。

公开(公告)号：US08745443B2

公开(公告)日：2014-06-03

申请号：US13326872

申请日：2011-12-15

申请人： Takashi Hirao ,  Mitsunori Tadokoro ,  Hirokuni Yano

发明人： Takashi Hirao ,  Mitsunori Tadokoro ,  Hirokuni Yano

IPC分类号： G06F11/00

CPC分类号： G06F11/1441

摘要： According to one embodiment, a memory system includes a data manager and a data restorer. The data manager multiplexes difference logs by a parallel writing operation and stores them in a second storage area, the difference logs being difference logs indicating difference information before and after update of a management table; and thereafter multiplexes predetermined data as finalizing logs and stores them in the second storage area. The data restorer determines a system status at startup of the memory system, by judging whether irregular power-off occurs or data destruction occurs in the second storage area, based on a data storage state of the difference logs and the finalizing logs stored in the second storage area.

摘要翻译： 根据一个实施例，存储器系统包括数据管理器和数据恢复器。 数据管理器通过并行写入操作来复用差异日志，并将它们存储在第二存储区域中，差异日志是指示更新管理表之前和之后的差异信息的差异日志; 然后将预定数据多路复用为完成日志并将它们存储在第二存储区域中。 数据恢复器通过基于存储在第二存储区域中的不同日志的数据存储状态和存储的完成日志来判断在启动存储器系统时的系统状态，通过判断是否发生不规则的电源关闭或在第二存储区域中发生数据破坏 储藏区域。

公开(公告)号：US07993964B2

公开(公告)日：2011-08-09

申请号：US12509852

申请日：2009-07-27

申请人： Takashi Hirao ,  Takahiro Hiramatsu ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda

发明人： Takashi Hirao ,  Takahiro Hiramatsu ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda

IPC分类号： H01L21/16 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618

摘要： A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å.

摘要翻译： 半导体器件的制造方法包括形成氧化锌的氧化物半导体薄膜层，其中以沉积状态的氧化物半导体薄膜层的至少一部分包括沿着垂直于所述氧化物半导体层的方向具有优选取向的晶格面 衬底和至少2.619埃的晶格间距d002。

公开(公告)号：US20090269881A1

公开(公告)日：2009-10-29

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。

公开(公告)号：US07576394B2

公开(公告)日：2009-08-18

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L31/0392

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US6083354A

公开(公告)日：2000-07-04

申请号：US517460

申请日：1995-08-21

申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Takashi Hirao

发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Takashi Hirao

IPC分类号： C01B31/06 ,  C07C1/00 ,  C07C2/00 ,  C07C4/00 ,  C07C5/00

CPC分类号： C01B31/065

摘要： The object of the present invention is to provide a treatment method to remove lattice defects and non-diamond elements that exist in a diamond or a diamond thin film.The treatment method whereby the aforementioned object is achieved is to have the diamond or the diamond thin film irradiated by ultra-violet light or heated in an oxygen ambient.According to said treatment method, it has become possible to obtain a diamond or a diamond thin film that is free from the adverse effects of lattice defects and non-diamond elements.

摘要翻译： 本发明的目的是提供一种去除存在于金刚石或金刚石薄膜中的晶格缺陷和非金刚石元素的处理方法。 实现上述目的的处理方法是使金刚石或金刚石薄膜用紫外线照射或在氧气氛中加热。 根据所述处理方法，可以获得没有晶格缺陷和非金刚石元素的不利影响的金刚石或金刚石薄膜。

公开(公告)号：US5766342A

公开(公告)日：1998-06-16

申请号：US544016

申请日：1995-10-17

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

IPC分类号： C23C16/24 ,  C23C16/448 ,  C30B23/06

CPC分类号： C23C16/4486 ,  C23C16/24 ,  Y10T117/1024

摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.

摘要翻译： 本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在 微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。

公开(公告)号：US5719740A

公开(公告)日：1998-02-17

申请号：US595240

申请日：1996-02-01

申请人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

IPC分类号： G01D5/241 ,  G01L9/00 ,  G01P15/125 ,  H01G7/00 ,  G01L9/12

CPC分类号： G01L9/0072 ,  G01D5/2417 ,  G01P15/125 ,  Y10T29/43

摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.

摘要翻译： 通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。 以这种方式，隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

公开(公告)号：US5672252A

公开(公告)日：1997-09-30

申请号：US483835

申请日：1995-06-15

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。