摘要:
A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
摘要:
The present invention is provided with a transmission line element having a ground wiring and a power supply wiring formed interposing an insulating film, on the power supply wiring on a semiconductor chip, lead or printed-circuit board, such that the capacitance per unit length of the transmission line element is boosted to set the characteristic impedance of the transmission line element for the high frequency range to an optimum value. In this way, the power supply wiring inclusive of the transmission line element can have a satisfactory decoupling performance.
摘要:
A semiconductor circuit in which low impedance characteristics required for a decoupling circuit are ensured up to a band of several hundreds of MHz or above in the situation where digital circuits are rushing into GHz age, and a semiconductor circuit exhibiting low impedance characteristics even in a band of several hundreds of MHz or above. A line element comprising a power supply line and a ground line or a ground plane arranged oppositely through a dielectric, characterized in that a dielectric covering the line element is provided.
摘要:
The surface-treated steel sheet has a zinc-based plated steel sheet, a surface-treatment coating being formed on the surface of the zinc-based steel sheet by applying and drying a surface treatment coating composition thereon, and a top coating being formed by applying and drying a coating composition for top coating on the surface-treatment coating. The surface treatment coating composition contains a water-epoxy resin dispersion, a silane coupling agent, and phosphoric acid and/or a hexafluorometal acid. The coating composition for top coating contains a high molecular weight epoxy group-containing resin having number average molecular weights ranging from 6000 to 20000.
摘要:
An image forming device includes an image carrier, a charging unit, an exposing device, a developing device, a control device and a pair of position adjusting devices. Each of the position adjusting devices is respectively provided at a leading edge and a trailing edge of an output field of the laser light of the exposing device. The position adjusting devices move the exposing device in a direction intersecting with a plane including a rotational center line of the image carrier to adjust a scanning direction of the laser light to be parallel to the rotational center line of the image carrier.
摘要:
In an optical information medium comprising an information recording layer having a mark train of marks and spaces, the mark train is read out by scanning it with a laser beam and detecting a light intensity change pattern of reflected laser beam. Provided that the reflected laser beam includes polarized light components which define an angle θ with the mark train, a polarized light component giving θ=0 is x0 component, and a polarized light component giving θ=90° is y0 component, the mark train is read out utilizing at least a light intensity change of x0 component. When pits or recorded marks having a size approximate to or below the resolution limit are read out, the present invention allows high read outputs to be obtained and prevents omission of readout signals.
摘要:
A bipolar transistor includes: a base having a first conductive type; an emitter having a second conductive type; a collector having the second conductive type; and a plurality of interceptors for intercepting a carrier path of a current in the base. The carrier path is disposed between the emitter and the collector through the base. Each interceptor is disposed on a shortest distance line of the carrier path in the base between the emitter and the collector. The carrier path is lengthened substantially without increasing the size of the transistor so that the transistor has a high withstand voltage. Further, the carrier path bypasses the interceptors so that the transport efficiency is not reduced substantially.
摘要:
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as a gate oxide film, and an interconnect line formed thereon as a gate electrode. The line capacitance between the interconnect line and the semiconductor substrate is 100 pF or above, whereby the decoupling device effectively decouples the electromagnetic noise wave generated by a switching device in a frequency range between 10 and 1000 GHz.
摘要:
An information-provision apparatus that is capable of easily changing the format of display data without the risk due to changes of the program since it is not necessary to change the program. A format-separation unit separates basic format data, to which part information is attached that indicates a starting position and ending position of each structural unit of the format, according to the part information, and stores the format of a format database in a format-memory unit. Next, a format-acquisition unit receives search conditions from an information terminal, and acquires each of the structural units corresponding to those search conditions from the format-memory unit. A display-data-generation unit inputs the data from the search results acquired from the database into the variables of the structural units acquired by the format-acquisition unit and generates display data, and a send unit sends the generated display data to the information terminal.
摘要:
A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode.