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43 条记录 (耗时 0.044 秒)

    MIM capacitor with diffusion barrier
    33.
    发明授权
    MIM capacitor with diffusion barrier 失效
    具有扩散阻挡层的MIM电容器

    公开(公告)号：US06864137B2

    公开(公告)日：2005-03-08

    申请号：US10619394

    申请日：2003-07-15

    申请人： Takashi Yoshitomi ,  Yuichi Nakashima

    发明人： Takashi Yoshitomi ,  Yuichi Nakashima

    IPC分类号： H01L23/52 ,  H01L21/02 ,  H01L21/304 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L21/8242

    CPC分类号： H01L28/40 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/32136 ,  H01L21/76801 ,  H01L21/76834 ,  Y10S438/957

    摘要： A process of manufacturing a semiconductor device. The initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first insulating film to form an opening. The next step is depositing a first electrode, a dielectric film and a second electrode successively on a bottom portion of the opening, The deposits being oriented such that they are in substantially parallel relationship with a surface of the semiconductor substrate. The final steps are removing selected portions of the first electrode, the dielectric film and the second electrode, forming a capacitor at a selected position in the opening, forming a second insulating film at least in the opening, and forming a third insulating film on the second insulating film.

    摘要翻译： 一种制造半导体器件的工艺。 初始工艺步骤是在半导体衬底上形成第一绝缘膜，并去除第一绝缘膜的选定部分以形成开口。 下一步是在开口的底部依次沉积第一电极，电介质膜和第二电极。沉积物取向为使得它们与半导体衬底的表面基本平行。 最后的步骤是去除第一电极，电介质膜和第二电极的选定部分，在开口中的选定位置形成电容器，至少在开口中形成第二绝缘膜，并在第二绝缘膜上形成第三绝缘膜 第二绝缘膜。

    Semiconductor device having capacitor and method of manufacturing the same
    34.
    发明授权
    Semiconductor device having capacitor and method of manufacturing the same 失效

    公开(公告)号：US06746929B2

    公开(公告)日：2004-06-08

    申请号：US10263186

    申请日：2002-10-03

    申请人： Takashi Yoshitomi ,  Masahiko Matsumoto

    发明人： Takashi Yoshitomi ,  Masahiko Matsumoto

    IPC分类号： H01L2120

    CPC分类号： H01L28/40

    摘要： A semiconductor device, comprising a first wiring formed in a first insulating film, a second insulating film formed on the first insulating film, a first electrode film selectively formed on the second insulating film, a third insulating film formed on the first electrode film, and having an end portion and a central portion, wherein the end portion has a thickness thinner than the central portion, a second electrode film formed on the central portion of the third insulating film such that the second electrode film faces the first electrode film.

    Semiconductor device having MIS transistors and capacitor
    35.
    发明授权
    Semiconductor device having MIS transistors and capacitor 失效
    具有MIS晶体管和电容器的半导体器件

    公开(公告)号：US6075266A

    公开(公告)日：2000-06-13

    申请号：US4781

    申请日：1998-01-09

    申请人： Takashi Yoshitomi

    发明人： Takashi Yoshitomi

    IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L29/92 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/0629 ,  H01L28/40

    摘要： The capacitor dielectric film (35) and the poly silicon layer (36) are formed on the silicide film (32) of the upper electrode LE of the capacitor. Further, after the Ti and TiN layer (37) has been formed on the poly silicon layer (36) by spattering, the formed Ti and TiN layer (37) is allowed to react upon the poly silicon layer (36), to form the TiSi.sub.2 layer (38) of high melting point silicide film on the poly silicon layer (36). After that, before forming the barrier layer (40) and the wiring layer (42), the substrate (10) is cleaned as pre-processing by applying a voltage to the substrate (10). In this cleaning process, since the capacitor dielectric film (35) is protected by the TiSi.sub.2 layer (38) of high melting point silicide film, it is possible to prevent the capacitor dielectric film (35) from being damaged during the cleaning process.

    摘要翻译： 在电容器的上电极LE的硅化物膜（32）上形成有电容电介质膜（35）和多晶硅层（36）。 此外，在通过溅射形成在多晶硅层（36）上的Ti和TiN层（37）之后，使形成的Ti和TiN层（37）在多晶硅层（36）上反应，形成 在多晶硅层（36）上的高熔点硅化物膜的TiSi 2层（38）。 之后，在形成阻挡层（40）和布线层（42）之前，通过向基板（10）施加电压来清洁基板（10）作为预处理。 在该清洗工序中，由于电容电介质膜（35）由高熔点硅化物膜的TiSi 2层（38）保护，所以可以防止电容器绝缘膜（35）在清洗过程中受损。

    Data processing apparatus, power supply controller and display unit
    36.
    发明授权
    Data processing apparatus, power supply controller and display unit 失效
    数据处理装置，电源控制器和显示单元

    公开(公告)号：US5511201A

    公开(公告)日：1996-04-23

    申请号：US857629

    申请日：1992-03-25

    申请人： Hideki Kamimaki ,  Kiyokazu Nishioka ,  Tsuguji Tachiuchi ,  Nobuo Tsuchiya ,  Masahiro Jinushi ,  Hitoshi Sadamitsu ,  Hiroshi Ito ,  Takashi Yoshitomi ,  Koichi Isaji ,  Takao Ohba

    发明人： Hideki Kamimaki ,  Kiyokazu Nishioka ,  Tsuguji Tachiuchi ,  Nobuo Tsuchiya ,  Masahiro Jinushi ,  Hitoshi Sadamitsu ,  Hiroshi Ito ,  Takashi Yoshitomi ,  Koichi Isaji ,  Takao Ohba

    IPC分类号： G09G3/34 ,  G06F11/00 ,  G06F11/30

    CPC分类号： G09G3/3406 ,  G09G2320/0606 ,  G09G2320/0626 ,  G09G2330/021 ,  G09G2330/026

    摘要： A data processing apparatus which includes a display unit and a power supply controller for supplying power to the display unit. The display unit has a display screen and a back light controller. The power supply controller comprises a switch, at least one output line for receiving the power from the switch and for supplying therethrough the power to electronic devices, a delay circuit for receiving the power from the switch and when the switch is turned ON to start supply of the power, for outputting the power after passage of a predetermined time from the start of the power supply, and a second output line for supplying the power from the delay circuit to the back light controller therethrough. The display unit has a memory means for storing therein a luminance data on the display screen through the back light controller when the power supply is turned OFF and for determining an output state of the display unit through the back light controller on the basis of the luminance data read out from the memory means when the power supply is turned ON. Further, the data processing apparatus has a means for invalidating output of a display data to be output onto the display screen and a means, after the display data is invalidated, for reducing a frequency of a timing signal or invalidating output of the timing signal for the display unit.

    摘要翻译： 一种数据处理装置，包括显示单元和用于向显示单元供电的电源控制器。 显示单元具有显示屏和背光控制器。 电源控制器包括开关，至少一个输出线，用于从开关接收电力并通过其向电子设备提供电力;延迟电路，用于从开关接收电力;以及当开关接通以开始供电时 的功率，用于在从电源开始经过预定时间之后输出电力;以及第二输出线，用于将来自延迟电路的电力提供给背光控制器。 显示单元具有存储装置，用于当电源关闭时通过背光控制器在其上存储亮度数据，并且通过背光控制器基于亮度来确定显示单元的输出状态 当电源接通时，从存储器读出的数据意味着。 此外，数据处理装置具有使输出到显示屏幕上的显示数据的输出无效的装置和在显示数据无效之后的装置，用于减少定时信号的频率或使定时信号的输出无效， 显示单元。

    Adhesive sheet and layered product
    40.
    发明申请
    Adhesive sheet and layered product 审中-公开
    粘合片和层压制品

    公开(公告)号：US20060134407A1

    公开(公告)日：2006-06-22

    申请号：US10543813

    申请日：2004-01-28

    申请人： Takashi Yoshitomi ,  Kazunori Kojima ,  Tsutomu Nakamura ,  Toyoaki Ishiwata ,  Toru Sawaki

    发明人： Takashi Yoshitomi ,  Kazunori Kojima ,  Tsutomu Nakamura ,  Toyoaki Ishiwata ,  Toru Sawaki

    IPC分类号： B32B7/12

    CPC分类号： H01L21/2007 ,  C09J7/22 ,  C09J7/35 ,  C09J2477/00 ,  C09J2479/086 ,  H01L21/76251 ,  Y10T428/28 ,  Y10T428/2852 ,  Y10T428/31721

    摘要： There are provided an adhesive sheet, exhibiting a specific peel strength and shear peel strength and being composed of a base material (A) comprising a fully aromatic polyimide film having a glass transition temperature of 200° C. or above and a thermal adhesive layer (C) comprising a fully aromatic polyamide having a glass transition temperature of 200-500° C., as well as a laminate composed of the sheet and a process for its production. Also provided is a method of release after treatment of the laminate composed of the adhesive sheet, to obtain a laminate having the target to-be-treated layer.

    摘要翻译： 提供具有特定剥离强度和剪切剥离强度的粘合片，并且由包含玻璃化转变温度为200℃以上的全芳香族聚酰亚胺膜和热粘合剂层（A）的基材（A） C）包括玻璃化转变温度为200-500℃的全芳族聚酰胺，以及由该片材制成的层压板及其制备方法。 还提供了由粘合片构成的层压体的处理后的剥离方法，得到具有被处理物的层的层叠体。