公开(公告)号：US20060134407A1

公开(公告)日：2006-06-22

申请号：US10543813

申请日：2004-01-28

申请人： Takashi Yoshitomi ,  Kazunori Kojima ,  Tsutomu Nakamura ,  Toyoaki Ishiwata ,  Toru Sawaki

发明人： Takashi Yoshitomi ,  Kazunori Kojima ,  Tsutomu Nakamura ,  Toyoaki Ishiwata ,  Toru Sawaki

IPC分类号： B32B7/12

CPC分类号： H01L21/2007 ,  C09J7/22 ,  C09J7/35 ,  C09J2477/00 ,  C09J2479/086 ,  H01L21/76251 ,  Y10T428/28 ,  Y10T428/2852 ,  Y10T428/31721

摘要： There are provided an adhesive sheet, exhibiting a specific peel strength and shear peel strength and being composed of a base material (A) comprising a fully aromatic polyimide film having a glass transition temperature of 200° C. or above and a thermal adhesive layer (C) comprising a fully aromatic polyamide having a glass transition temperature of 200-500° C., as well as a laminate composed of the sheet and a process for its production. Also provided is a method of release after treatment of the laminate composed of the adhesive sheet, to obtain a laminate having the target to-be-treated layer.

摘要翻译： 提供具有特定剥离强度和剪切剥离强度的粘合片，并且由包含玻璃化转变温度为200℃以上的全芳香族聚酰亚胺膜和热粘合剂层（A）的基材（A） C）包括玻璃化转变温度为200-500℃的全芳族聚酰胺，以及由该片材制成的层压板及其制备方法。 还提供了由粘合片构成的层压体的处理后的剥离方法，得到具有被处理物的层的层叠体。

公开(公告)号：US20070148480A1

公开(公告)日：2007-06-28

申请号：US10584330

申请日：2004-12-22

申请人： Toyoaki Ishiwata ,  Toru Sawaki ,  Takashi Yoshitomi ,  Tsutomu Nakamura

发明人： Toyoaki Ishiwata ,  Toru Sawaki ,  Takashi Yoshitomi ,  Tsutomu Nakamura

IPC分类号： B32B27/34 ,  B29C63/00

CPC分类号： H01L21/6835 ,  B32B7/12 ,  B32B15/08 ,  B32B27/08 ,  B32B27/281 ,  B32B27/34 ,  B32B2255/06 ,  B32B2255/26 ,  B32B2307/206 ,  B32B2307/306 ,  B32B2307/734 ,  B32B2457/14 ,  C09J5/00 ,  C09J7/22 ,  C09J7/25 ,  C09J7/35 ,  C09J2203/326 ,  C09J2205/302 ,  C09J2477/00 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  H01L21/4803 ,  H01L21/6836 ,  H01L23/145 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y10T428/31721 ,  H01L2924/00

摘要： A laminate which is advantageously used as an insulating layer for electronic package application and as an adhesive film for fixing a semiconductor wafer for semiconductor device application, laminates comprising the same and a process for manufacturing the above laminate. The laminate (I) comprises a base layer (A) and an adhesive layer (B) formed on one side or both sides of the layer A, the layer A is a film made of (A-1) a specific wholly aromatic polyimide (PIA-1) or (A-2) a specific wholly aromatic polyamide (PAA-2); and the layer B comprises (B-1) a specific wholly aromatic polyimide (PIB-1), (B-2) a specific wholly aromatic polyamide (PAB-2), or (B-3) a specific resin composition (RCB-3) comprising a wholly aromatic polyimide (PIB-3) and a specific wholly aromatic polyamide (PAB-3), laminates comprising the same and a process for manufacturing the above laminate.

摘要翻译： 有利地用作电子封装应用的绝缘层和用于固定用于半导体器件应用的半导体晶片的粘合膜的层压体，包括该半导体器件的层压体以及用于制造上述层叠体的方法。 层压体（I）包括在层A的一侧或两侧形成的基底层（A）和粘合剂层（B），层A是由（A-1）特定的全芳族聚酰亚胺 （A-2）特定的全芳族聚酰胺（PAA-A-2）;或（A-2） 并且层B包含（B-1）特定的全芳族聚酰亚胺（PI B-1），（B-2）特定的全芳族聚酰胺（PA B-2 / >）或（B-3）包含全芳香族聚酰亚胺（PI B-3）的特定树脂组合物（RC B-3）和特定的全芳族聚酰胺 （PA B-3），含有它们的层压体和制造上述层压体的方法。

公开(公告)号：US09570725B2

公开(公告)日：2017-02-14

申请号：US13881314

申请日：2011-10-21

申请人： Takashi Yoshitomi

发明人： Takashi Yoshitomi

IPC分类号： H01M2/16 ,  H01M10/0525 ,  H01M2/34

CPC分类号： H01M2/162 ,  H01M2/1613 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/1666 ,  H01M2/1686 ,  H01M2/348 ,  H01M10/0525

摘要： Disclosed is a separator for a non-aqueous electrolyte battery, the separator including a polyolefin microporous substrate in which a content of polyolefin having a molecular weight of 100,000 or less is from 10% by mass to 25% by mass relative to a total amount of polyolefin, and a heat resistant porous layer that is formed on one or both sides of the polyolefin microporous substrate and that includes a heat resistant polymer, wherein a maximum value of S, which is represented by the following formula (1), is 0.8 or more, and a temperature exhibiting the maximum value of S is from 130° C. to 155° C.: S=d(log R)/dT  Formula (1): wherein R represents a resistance (ohm·cm2) of a cell, and T represents a temperature (° C.), in a measurement using a battery that includes the cell that is provided with a separator for a non-aqueous electrolyte battery, at a temperature rising rate of 1.6° C./min.

摘要翻译： 其中R表示电池的电阻（欧姆·cm 2），T表示温度（℃），在使用包括具有非水电解质电池用隔膜的电池的电池的测量中， 升温速度为1.6℃/ min。

公开(公告)号：US09029002B2

公开(公告)日：2015-05-12

申请号：US13069111

申请日：2011-03-22

申请人： Satoshi Nishikawa ,  Takashi Yoshitomi ,  Guemju Cha ,  Takahiro Daido

发明人： Satoshi Nishikawa ,  Takashi Yoshitomi ,  Guemju Cha ,  Takahiro Daido

IPC分类号： H01M2/14 ,  H01M2/16 ,  H01M10/0525

CPC分类号： H01M2/166 ,  H01M2/145 ,  H01M2/1626 ,  H01M2/1633 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/1666 ,  H01M2/1686 ,  H01M10/0525 ,  Y10T29/49112 ,  Y10T29/49115

摘要： The present invention is to provide a separator that is excellent in heat resistance, shutdown function, flame retardancy and handling property. The separator for a nonaqueous secondary battery of the invention is a separator for a nonaqueous secondary battery that has a polyolefin microporous membrane at least one surface of which is laminated with a heat resistant porous layer containing a heat resistant resin, and is characterized by containing an inorganic filler containing a metallic hydroxide that undergoes dehydration reaction at a temperature of 200 to 400° C.

摘要翻译： 本发明提供耐热性，关闭功能，阻燃性和处理性优异的隔膜。 本发明的非水系二次电池用隔膜是具有聚烯烃微多孔膜的非水系二次电池用隔膜，该聚烯烃微多孔膜的至少一面与含有耐热树脂的耐热性多孔层层叠，其特征在于，含有 含有在200〜400℃的温度下进行脱水反应的金属氢氧化物的无机填料

公开(公告)号：US20050224898A1

公开(公告)日：2005-10-13

申请号：US11143594

申请日：2005-06-03

申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

公开(公告)号：US20050001255A1

公开(公告)日：2005-01-06

申请号：US10902579

申请日：2004-07-30

申请人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

发明人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/08 ,  H01L27/108

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805

摘要： At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.

公开(公告)号：US06617666B2

公开(公告)日：2003-09-09

申请号：US10093114

申请日：2002-03-07

申请人： Takashi Yoshitomi ,  Yuichi Nakashima

发明人： Takashi Yoshitomi ,  Yuichi Nakashima

IPC分类号： H01L2900

CPC分类号： H01L28/40 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/32136 ,  H01L21/76801 ,  H01L21/76834 ,  Y10S438/957

摘要： A semiconductor device includes a first insulating film comprising an opening, a capacitor formed at a selected position in the opening, a second insulating film formed at least in the opening, and a third insulating film formed on the second insulating film.

公开(公告)号：US5698881A

公开(公告)日：1997-12-16

申请号：US353240

申请日：1994-12-02

申请人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata ,  Tatsuya Ooguro ,  Claudio Fiegna

发明人： Takashi Yoshitomi ,  Masanobu Saito ,  Hisayo Momose ,  Hiroshi Iwai ,  Yukihiro Ushiku ,  Mizuki Ono ,  Yasushi Akasaka ,  Hideaki Nii ,  Satoshi Matsuda ,  Yasuhiro Katsumata ,  Tatsuya Ooguro ,  Claudio Fiegna

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/76

CPC分类号： H01L29/6659 ,  H01L21/0338 ,  H01L21/2255 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823814 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/42376 ,  H01L29/66628

摘要： A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.

摘要翻译： MOS型半导体器件具有长度为170nm（0.17μm）以下的栅极，沟道附近的源极和漏极扩散层的结深度为22nm以下，表面上的杂质浓度 在源极和漏极扩散层中形成1020cm-3以上。 这种结构使用从950℃到1050℃的热范围的固相扩散和/或通过灰化或蚀刻使栅极宽度变窄来获得。 其他MOS型半导体器件的特征在于源极和漏极扩散层区域中的结深度xj [nm]与有效沟道长度Leff [nm]之间的关系由Leff> 0.69×j-6.17确定。

公开(公告)号：US5223335A

公开(公告)日：1993-06-29

申请号：US850806

申请日：1992-03-13

申请人： Hiroo Inata ,  Shunichi Matsumura ,  Takashi Yoshitomi

发明人： Hiroo Inata ,  Shunichi Matsumura ,  Takashi Yoshitomi

IPC分类号： C08G63/44 ,  C08G65/333 ,  C08G69/44

CPC分类号： C08G69/44 ,  C08G63/44 ,  C08G65/3332 ,  Y10T428/30 ,  Y10T442/2721

摘要： A process for the production of a fiber-reinforced composite material, which comprises the steps of(1) preparing a polymeric composition containing a substantially linear aromatic oligomer having a terminal aliphatic hydroxyl group, bis(acylcaprolactam) and a catalyst which promotes a ring opening-addition reaction of a hydroxyl group and a caprolactam ring,(2) melting the polymeric composition and impregnating it into a fibrous reinforcing material to form a impregnated product, and(3) heating the impregnated product up to a temperature sufficient to open the caprolactam ring while inhibiting elimination of caprolactam thereby to form, as a matrix resin, a thermoplastic copolymer having an ester group and an amide group in its main chain;and a fiber-reinforced composition material produced by the above-mentioned process.

公开(公告)号：US20130236767A1

公开(公告)日：2013-09-12

申请号：US13882652

申请日：2011-10-21

申请人： Satoshi Nishikawa ,  Hiroki Sano ,  Takashi Yoshitomi

发明人： Satoshi Nishikawa ,  Hiroki Sano ,  Takashi Yoshitomi

IPC分类号： H01M2/16 ,  H01M2/14

CPC分类号： H01M2/162 ,  H01M2/145 ,  H01M2/1653 ,  H01M2/1673 ,  H01M2/1686 ,  H01M10/052 ,  H01M10/0566 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T156/10 ,  Y10T156/1062

摘要： An example of the present invention is provided with porous sheets 11, 21 each formed by layering a porous base material including a polyolefin and a heat-resistant porous layer including a heat-resistant resin. The porous sheets 11, 21, respectively, are connected at connecting regions 15a and 15b, 25a and 25b, respectively, which have been formed by thermal fusion of the heat-resistant porous layers facing each other by folding the sheets. Furthermore, the porous sheets 11, 21 are additionally connected at a connecting region 27 that has been formed by thermal fusion.

摘要翻译： 本发明的实施例提供有多孔片11,21，它们通过层压包括聚烯烃的多孔基材和包含耐热树脂的耐热多孔层形成。 多孔片11,21分别通过折叠片材而分别通过耐热多孔层彼此面对而形成的连接区域15a和15b，25a和25b连接。 此外，多孔片11,21在通过热熔形成的连接区域27附加地连接。