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    SILICON CARBIDE SINGLE CRYSTAL WAFER AND PRODUCING METHOD THEREOF
    34.
    发明申请
    SILICON CARBIDE SINGLE CRYSTAL WAFER AND PRODUCING METHOD THEREOF 有权
    硅碳化硅单晶及其生产方法

    公开(公告)号：US20090302326A1

    公开(公告)日：2009-12-10

    申请号：US11912207

    申请日：2006-04-19

    申请人： Takayuki Maruyama

    发明人： Takayuki Maruyama

    IPC分类号： H01L29/24 ,  H01L21/20

    CPC分类号： H01L21/02529 ,  C30B25/00 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78

    摘要： A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm2 over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.

    摘要翻译： 一种碳化硅单晶晶片，其中从与α（α）的α型碳化硅单晶的（0001）c面成OFF角切割基板，在偏离方向偏离（11 -20）方向小于10°时，从在晶片外延生长的晶片的表面露出的基本上三角形层叠缺陷的数量在晶片的整个表面上小于4 / cm 2。 本发明提供了一种能够提高体积碳化硅单晶的利用率，元素特性和切割的碳化硅单晶晶片的制造方法以及通过这种制造方法获得的碳化硅单晶晶片。

    Preventive And/Or Remedy For Lower Urinary Tract Diseases Containing Ep4 Agonist
    36.
    发明申请
    Preventive And/Or Remedy For Lower Urinary Tract Diseases Containing Ep4 Agonist 有权
    预防和/或补救含有Ep4激动剂的下尿路疾病

    公开(公告)号：US20080021021A1

    公开(公告)日：2008-01-24

    申请号：US11660043

    申请日：2005-08-09

    申请人： Hiroki Okada ,  Takayuki Maruyama

    发明人： Hiroki Okada ,  Takayuki Maruyama

    IPC分类号： A61K31/535 ,  A61K31/4164 ,  A61K31/4196 ,  A61K31/421 ,  A61K31/4245 ,  A61K31/5375 ,  A61P13/02 ,  A61K31/54 ,  A61K31/426 ,  A61K31/433 ,  A61K31/495 ,  A61K31/505

    CPC分类号： A61K9/2054 ,  A61K31/5575 ,  A61K31/559 ,  A61K45/06 ,  A61K2300/00

    摘要： (1) A preventive and/or a remedy for lower urinary tract diseases such as inflammation in the lower urinary tract, cystitis (interstitial cystitis, etc.) and urethritis; (2) an agent for improving bladder compliance and/or bladder capacity; and (3) an agent for protecting bladder mucosa and/or bladder epithelial cells and/or promoting the regeneration thereof; each containing an EP4 agonist. An EP4 agonist is useful in ameliorating symptoms of lower urinary tract diseases such as (1) frequent urination, (2) urgency of urination, (3) pain in the reproductive organs and/or lower urinary tract (for example, bladder pain, urinary tract pain, vulvar pain, vaginal pain, scrotal pain, perineal pain, pelvic pain, etc.) and/or (4) discomfort in the reproductive organs and/or lower urinary tract. Among all, a selective EP4 agonist is useful as a preventive and/or remedy for lower urinary tract diseases having no side effect.

    摘要翻译： （1）下泌尿道疾病如下泌尿道炎症，膀胱炎（间质性膀胱炎等）和尿道炎的预防和/或补救措施; （2）改善膀胱依从性和/或膀胱容量的药剂; 和（3）用于保护膀胱粘膜和/或膀胱上皮细胞和/或促进其再生的药剂; 每个含有EP 4激动剂。 EP 4激动剂可用于改善下尿路疾病的症状，例如（1）尿频，（2）排尿紧急，（3）生殖器官和/或下泌尿道疼痛 （例如，膀胱疼痛，尿路疼痛，外阴疼痛，阴道疼痛，阴囊疼痛，会阴疼痛，骨盆疼痛等）和/或（4）生殖器官和/或下尿路中的不适。 其中，选择性EP 4激动剂可用作不具有副作用的下尿路疾病的预防和/或补救措施。

    Silicon carbide single crystal and method and apparatus for producing the same
    38.
    发明申请
    Silicon carbide single crystal and method and apparatus for producing the same 审中-公开
    碳化硅单晶及其制造方法和装置

    公开(公告)号：US20050205003A1

    公开(公告)日：2005-09-22

    申请号：US11133308

    申请日：2005-05-20

    申请人： Takayuki Maruyama ,  Shigeki Endo

    发明人： Takayuki Maruyama ,  Shigeki Endo

    IPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/20 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B23/00 ,  C30B29/36

    摘要： A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cover body 11 of the graphite crucible 10, the sublimation raw material 40 is sublimated by a first induction heating coil 21 placed at the side of sublimation raw material 40, a re-crystallization atmosphere is form by a second induction heating coil 20 placed at the side of cover body 11 so that the sublimation raw material 40 sublimated by the first induction heating coil 21 is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material 40 is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal 60 is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.

    摘要翻译： 一种生产碳化硅单晶的方法，其中升华原料40容纳在石墨坩埚10中的容器本体12侧，将碳化硅单晶的晶种放置在盖体11的侧面 石墨坩埚10中，升华原料40通过位于升华原料40一侧的第一感应加热线圈21而升华，通过设置在盖体11侧的第二感应加热线圈20形成再结晶气氛 使得由第一感应加热线圈21升华的升华原料40仅在碳化硅单晶的晶种附近再结晶，并且升华原料40在晶种上再结晶 碳化硅单晶和碳化硅单晶60生长，同时通过全部生长工艺将其生长表面的整个表面保持凸形。 具有优异的绝缘击穿性，耐热性，耐辐射性等优异的高质量碳化硅单晶，适用于电子和光学器件等，并且不显示多晶体和多晶型物的污染，无微孔缺陷和 可以有效地生产，而不会破裂等。