公开(公告)号：US06414499B2

公开(公告)日：2002-07-02

申请号：US09846372

申请日：2001-05-02

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： G02R31308

CPC分类号： H01L22/26 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An equipment for manufacturing semiconductor devices, comprises a processing tool which processes a to-be-processed surface of a semiconductor workpiece to a target shape, a monitor which three-dimensionally monitors a shape of a processed surface of the semiconductor workpiece while the semiconductor workpiece is set in the processing tool, and a controller which controls the processing tool in a feedback manner on the basis of the shape of the processed surface monitored by the monitor. If the shape of the processed surface deviates from the target shape, the controller adjusts process conditions of the processing tool so that the target shape can be obtained.

摘要翻译： 一种用于制造半导体器件的设备，包括将半导体工件的待处理表面处理为目标形状的处理工具，在半导体工件的三维监视半导体工件的加工表面的形状的监视器 设置在处理工具中，以及控制器，其基于由监视器监视的处理表面的形状以反馈方式控制处理工具。 如果处理后的表面的形状偏离目标形状，则控制器调整加工工具的工艺条件，从而可以获得目标形状。

公开(公告)号：US06368951B2

公开(公告)日：2002-04-09

申请号：US09903992

申请日：2001-07-13

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

IPC分类号： H01L214763

CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在形成于半导体衬底上的第一绝缘膜上形成沟槽，在所述沟槽中形成下层配线的工序，在所述半导体衬底上形成至少一层导体层， 在导电层上形成至少一层薄膜层的步骤，通过图案化薄膜形成硬掩模的步骤，通过使用硬掩模作为蚀刻掩模蚀刻导电层的步骤，以及形成 导电柱状结构，其上表面被硬掩模覆盖在下层布线上;在半导体基板上形成第二绝缘膜以使柱状结构被埋设的步骤，形成 至少暴露硬掩模的布线沟槽以及在去除硬掩模之后将导体埋入布线沟槽中的步骤，以及在布线沟槽中形成上层布线。

公开(公告)号：US06335534B1

公开(公告)日：2002-01-01

申请号：US09291967

申请日：1999-04-15

申请人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/31711

摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used wit each ion implantation step.

摘要翻译： 具有形成开口的导电掩模位于半导体衬底之上，并且通过导电掩模将离子注入到半导体衬底的表面中，从而形成离子注入层。 对于在不同条件下的离子注入，每个离子注入步骤都使用专用的导电掩模。

公开(公告)号：US06301435B1

公开(公告)日：2001-10-09

申请号：US09573227

申请日：2000-05-19

申请人： Shinichi Ito ,  Katsuya Okumura

发明人： Shinichi Ito ,  Katsuya Okumura

IPC分类号： F26B1900

CPC分类号： F26B3/28

摘要： A heating method for heating an object by making use of a heating apparatus comprising lamps and light transmissive columnar bodies each being positioned in front of and in the light irradiating direction of each of the lamps and having a fore-end constituting a light-receiving face for taking up an irradiated light from the lamp and a rear-end constituting a light-irradiating face for irradiating light; the object being disposed to face the light-irradiating faces of the light transmissive columnar bodies and heated by the irradiation of light transmitted via the light transmissive columnar bodies from the lamps. A distance between the light-irradiating faces of the light transmissive columnar bodies and the object is set to around 0.3L or not less than 0.8L (herein, L is a width of the light-irradiating face).

摘要翻译： 一种利用包括灯和透光柱状体的加热装置加热物体的加热方法，每个灯都位于每个灯的前面和光线照射方向上，并且具有构成光接收面的前端 用于摄取来自灯的照射光和构成用于照射光的光照射面的后端; 物体被设置为面对透光柱状体的光照射面，并且通过从灯透过的透光柱状体的光的照射被加热。 透光性柱状体的光照射面与物体之间的距离设定为0.3L以下且0.8L以上（此处，L为照射面的宽度）。

公开(公告)号：US06284020B1

公开(公告)日：2001-09-04

申请号：US09555501

申请日：2000-06-02

申请人： Ayako Mizuno ,  Makiko Katano ,  Katsuya Okumura

发明人： Ayako Mizuno ,  Makiko Katano ,  Katsuya Okumura

IPC分类号： B01D5000

CPC分类号： H01L21/67366 ,  H01L21/67017 ,  H01L21/67393

摘要： A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.

摘要翻译： 一种保持基板的清洁的方法，包括：第一步骤，用于将至少一片具有靠近其设置的气态杂质捕获过滤器的基板容纳在气密密封的盒子中;第二步骤，用于使盒子中的气氛以 两次或更多次，使得大气中的杂质被气态杂质捕获过滤器吸附。 用于容纳基板的盒子包括壳体，其中容纳基板的空间用盖子气密地封闭，气体杂质捕获过滤器布置在壳体中并且适于吸收空间中包含的杂质，并且气氛循环装置 使循环容积与空间体积的比率不小于2，以使气氛循环，以使其通过气态杂质捕获过滤器。

公开(公告)号：US06239441B1

公开(公告)日：2001-05-29

申请号：US09007053

申请日：1998-01-14

申请人： Kyoichi Suguro ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01L21/26593 ,  H01J37/3171 ,  H01L21/26513 ,  H01L21/324

摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.

摘要翻译： 本发明的目的是避免由于重复离子注入和退火过程而导致的Si衬底的机械强度降低。 当Si衬底表面温度保持在-60℃以下时，注入离子。 然后加热Si衬底以回收由离子注入引起的注入缺陷。 根据需要重复低温离子注入和退火处理的这种组合。

公开(公告)号：US6159303A

公开(公告)日：2000-12-12

申请号：US105029

申请日：1998-06-25

申请人： Soichi Nadahara ,  Katsuya Okumura

发明人： Soichi Nadahara ,  Katsuya Okumura

IPC分类号： B08B3/02 ,  B08B3/04 ,  H01L21/00 ,  H01L21/304 ,  B08B7/04

CPC分类号： H01L21/67057 ,  B08B3/044 ,  H01L21/67051 ,  Y10S134/902

摘要： A liquid displacement apparatus comprises a processing tank for placing a target object in its inside, a supply unit for supplying at least pure water into the processing tank from a lower part thereof, in which the pure water is drained by overflow from an upper part of the processing tank, and a drain unit disposed in the upper part of the processing tank for partially increasing a flow rate of the pure water in the processing tank.

摘要翻译： 液体置换装置包括用于将目标物体放置在其内部的处理槽，供应单元，用于从其下部向处理槽供应至少纯净的水，其中纯净水从上部溢出排出 处理罐和设置在处理槽的上部的排出单元，用于部分地增加处理槽中的纯水的流量。

公开(公告)号：US6072162A

公开(公告)日：2000-06-06

申请号：US352323

申请日：1999-07-12

申请人： Shinichi Ito ,  Katsuya Okumura

发明人： Shinichi Ito ,  Katsuya Okumura

IPC分类号： G03F7/16 ,  H01L21/00 ,  H01L21/027 ,  H05B3/26 ,  H05B3/68 ,  C23C16/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/262 ,  H05B3/68 ,  H05B2203/022

摘要： A device for heating a substrate comprises a heating plate for heating a to-be-treated substrate, substrate holding section for holding the to-be-treated substrate on the heating plate, a gas stream producing section for producing a gas stream in a space above the heating plate in one direction along a surface of the heating plate, and a heater provided at the heating plate, and having pattern symmetrical with respect to a gas stream flowing through the center of the heating plate, wherein the heater comprises a first heater constituting section having heater elements arranged in the form of a ring, and a second heater constituting section located inside the first heater constituting section and having heater elements which are arranged so that more heat is generated in an upstream side of the gas stream than in a downstream side thereof.

摘要翻译： 用于加热基板的装置包括用于加热被处理基板的加热板，用于将待处理基板保持在加热板上的基板保持部分，用于在空间中产生气流的气流产生部分 在加热板的一个方向上方，以及设置在加热板上的加热器，并且具有相对于流过加热板的中心的气流对称的图案，其中加热器包括第一加热器 具有以环形形式设置的加热器元件的构成部分和位于第一加热器构成部分内部的第二加热器构成部分，并且具有加热器元件，其布置成在气流的上游侧产生比在 下游侧。

公开(公告)号：US6059880A

公开(公告)日：2000-05-09

申请号：US995990

申请日：1997-12-22

申请人： Takahiro Kitano ,  Katsuya Okumura ,  Shinichi Ito

发明人： Takahiro Kitano ,  Katsuya Okumura ,  Shinichi Ito

IPC分类号： B05C11/08 ,  G03F7/16 ,  H01L21/027 ,  B05C5/00

CPC分类号： G03F7/162

摘要： A coating apparatus according to the invention comprises a spin chuck for holding a substrate, resist solution tanks which contain a primary resist solution, a thinner tank which contains thinner, a confluence valve communicating with the thinner tank and the resist solution tanks, first pumps each for supplying the confluence valve with the primary resist solution from a corresponding one of the resist solution tanks, a second pump for supplying thinner from the thinner tank to the confluence valve, a mixer for mixing the primary treatment solution and thinner supplied from the confluence valve, a nozzle for applying a solution from the mixer, to the substrate held by the spin chuck, and a controller for controlling the first and second pumps to adjust the mixture ratio of the primary resist solution to be supplied from each of the resist solution tanks to the confluence valve, to thinner to be supplied from the thinner tank to the confluence valve.

摘要翻译： 根据本发明的涂覆装置包括：用于保持基底的旋转卡盘，含有主抗蚀剂溶液的抗蚀剂溶液罐，含有较薄的罐的较薄的罐，与较薄罐相连的汇流阀和抗蚀剂溶液罐，首先泵送每个 用于从所述抗蚀剂溶液罐中的相应的一个供应所述汇流阀，用于从所述较薄罐向所述汇流阀供应较薄的第二泵，用于混合所述主处理溶液和从所述汇流阀供应的稀释剂的混合器 用于将来自混合器的溶液施加到由旋转卡盘保持的基板的喷嘴，以及用于控制第一和第二泵以调节要从每个抗蚀剂溶液罐供应的主抗蚀剂溶液的混合比率的控制器 到合流阀，从较薄的罐到合流阀更薄。

公开(公告)号：US6048791A

公开(公告)日：2000-04-11

申请号：US50357

申请日：1998-03-31

申请人： Tomio Katata ,  Katsuya Okumura

发明人： Tomio Katata ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28061

摘要： A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.

摘要翻译： 第一TiSix层沉积在多晶硅层上，然后将硅衬底在真空气氛中退火以使TiSix层结晶，并且在第一结晶TiSix层上提供第二TiSix层。