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134 条记录 (耗时 0.034 秒)

    Electronic blackboard device
    31.
    发明授权
    Electronic blackboard device 失效
    电子黑板装置

    公开(公告)号：US06188493B1

    公开(公告)日：2001-02-13

    申请号：US09058242

    申请日：1998-04-10

    申请人： Takahiro Esaki ,  Kazuhiro Eguchi ,  Takeshi Nakayama

    发明人： Takahiro Esaki ,  Kazuhiro Eguchi ,  Takeshi Nakayama

    IPC分类号： H04N146

    CPC分类号： H04N1/46

    摘要： An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.

    摘要翻译： 能够进行彩色打印的电子黑板装置。 由图像传感器读取的数据由A / D转换器转换成数字数据，经由阴影校正电路和转换器提供给打印机控制电路，使得彩色打印机以对应于标记的颜色打印适当的数据 。

    Nonvolatile semiconductor memory device with a row redundancy circuit
    34.
    发明授权
    Nonvolatile semiconductor memory device with a row redundancy circuit 失效
    具有行冗余电路的非易失性半导体存储器件

    公开(公告)号：US5548557A

    公开(公告)日：1996-08-20

    申请号：US179731

    申请日：1994-01-11

    申请人： Tomoshi Futatsuya ,  Masaaki Mihara ,  Yasushi Terada ,  Takeshi Nakayama ,  Yoshikazu Miyawaki ,  Shinichi Kobayashi ,  Minoru Ohkawa

    发明人： Tomoshi Futatsuya ,  Masaaki Mihara ,  Yasushi Terada ,  Takeshi Nakayama ,  Yoshikazu Miyawaki ,  Shinichi Kobayashi ,  Minoru Ohkawa

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/06 ,  G11C16/08 ,  G11C29/00 ,  G11C29/04

    CPC分类号： G11C29/804 ,  G11C16/08 ,  G11C29/82 ,  G11C29/848

    摘要： A collective erasure type nonvolatile semiconductor memory device which allows use of redundant structure to word lines is provided. A row address buffer having address converting function simultaneously selects a plurality of physically adjacent word lines from a memory array in programming before erasure. Programming before erasure is effected on the memory cells on the simultaneously selected word lines. Even when physically adjacent word lines are short-circuited between each other, programming high voltage can be transmitted to the defective word lines, as these word lines are selected simultaneously. Therefore, the memory cells on the defective word lines can be programmed before erasure, so that over erasure at the time of collective erasing operation can be prevented. Thus, redundant structure for replacing defecting word lines by spare word lines can be utilized.

    摘要翻译： 提供了允许对字线使用冗余结构的集体擦除型非易失性半导体存储器件。 具有地址转换功能的行地址缓冲器在擦除之前在编程中同时从存储器阵列中选择多个物理上相邻的字线。 擦除之前的编程对同时选择的字线上的存储单元进行。 即使当物理上相邻的字线彼此短路时，由于这些字线被同时选择，编程高电压也可被传送到有缺陷的字线。 因此，可以在擦除之前对缺陷字线上的存储单元进行编程，从而可以防止在集体擦除操作时的过度擦除。 因此，可以利用用备用字线代替缺陷字线的冗余结构。

    Non-volatile semiconductor memory device
    37.
    发明授权
    Non-volatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US5283758A

    公开(公告)日：1994-02-01

    申请号：US794708

    申请日：1991-11-20

    申请人： Takeshi Nakayama ,  Yasushi Terada ,  Kazuo Kobayashi ,  Masanori Hayashikoshi ,  Yoshikazu Miyawaki

    发明人： Takeshi Nakayama ,  Yasushi Terada ,  Kazuo Kobayashi ,  Masanori Hayashikoshi ,  Yoshikazu Miyawaki

    IPC分类号： G11C7/18 ,  G11C16/04 ,  G11C16/16 ,  G11C11/34

    CPC分类号： G11C16/16 ,  G11C16/0425 ,  G11C16/0491 ,  G11C7/18

    摘要： A plurality of memory cell transistors having floating gates are disposed in a matrix in the direction of row and column to form a memory cell array. The memory cell array is divided into a plurality of sectors for every predetermined row. In each sector, sector selecting transistors and sub bit lines are provided, so that erasing and programming can be made for each sector. Therefore, total erasing for sector becomes possible, and since no voltage is applied to sub bit lines and word lines of non-selected sectors, the number of operations of preventing writing into non-selected memory cells is as many as the word lines included in one sector.

    摘要翻译： 具有浮动栅极的多个存储单元晶体管以行和列的方向设置在矩阵中以形成存储单元阵列。 存储单元阵列被划分成用于每个预定行的多个扇区。 在每个扇区中，提供扇区选择晶体管和子位线，从而可以对每个扇区进行擦除和编程。 因此，扇区的全部擦除成为可能，并且由于没有电压施加到非选择扇区的子位线和字线，所以防止写入未选择的存储单元的操作次数与包括在 一个部门。

    Nonvolatile semiconductor memory device and a writing method using electron tunneling
    38.
    发明授权
    Nonvolatile semiconductor memory device and a writing method using electron tunneling 失效
    非易失性半导体存储器件和使用电子隧穿的写入方法

    公开(公告)号：US4958317A

    公开(公告)日：1990-09-18

    申请号：US224743

    申请日：1988-07-27

    申请人： Yasushi Terada ,  Kazuo Kobayashi ,  Takeshi Nakayama

    发明人： Yasushi Terada ,  Kazuo Kobayashi ,  Takeshi Nakayama

    IPC分类号： G11C17/00 ,  G11C16/04 ,  G11C16/10

    CPC分类号： G11C16/10

    摘要： Externally inputted data of one word line is temporarily stored in a latch circuit. In the writing cycle, the data stored and held in the latch circuit is collectively written in memory transistors connected to the selected word line. On this occasion, 0 V is applied to one of the control gate and the drain of the memory transistor in which "0" is written and a high voltage V.sub.PP is applied to the other of the control gate and the drain. Therefore, not only in the erasing cycle but also in the writing cycle, the operation is carried out by the movement of charges caused by the electron tunneling.

    摘要翻译： 一个字线的外部输入数据被临时存储在锁存电路中。 在写入周期中，存储并保持在锁存电路中的数据被共同地写入连接到所选字线的存储晶体管中。 在这种情况下，0V被施加到其中写入“0”的存储晶体管的控制栅极和漏极之一，并且高电压VPP被施加到控制栅极和漏极中的另一个。 因此，不仅在擦除循环中，而且在写入周期中，通过电子隧穿引起的电荷的移动来进行操作。

    Semiconductor device
    39.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4694314A

    公开(公告)日：1987-09-15

    申请号：US811884

    申请日：1985-12-20

    申请人： Yasushi Terada ,  Takeshi Nakayama

    发明人： Yasushi Terada ,  Takeshi Nakayama

    IPC分类号： G11C17/00 ,  G11C16/06 ,  G11C16/12 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/112 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

    CPC分类号： G11C16/12

    摘要： A semiconductor device in which a capacitor of a switched-capacitor included in an RC network for defining the rise time of a programming high-voltage pulse signal of an EEPROM is formed of an oxide film having a thickness corresponding to the thickness of a tunnel oxide film or an oxide film between a floating gate and a control gate so that a shift amount of a threshold voltage of a memory transistor is made constant even if the thickness of the tunnel oxide film or the oxide film between the floating gate and the control gate is deviated from a designed value.

    摘要翻译： 包括在RC网络中的用于限定EEPROM的编程高电压脉冲信号的上升时间的开关电容器的电容器的半导体器件由具有对应于隧道氧化物的厚度的厚度的氧化物膜形成 薄膜或浮动栅极和控制栅极之间的氧化物膜，使得即使隧道氧化物膜的厚度或浮动栅极和控制栅极之间的氧化物膜，存储晶体管的阈值电压的偏移量也变得恒定 偏离设计值。

    Japanese text inputting system having interactive mnemonic mode and display choice mode
    40.
    发明授权
    Japanese text inputting system having interactive mnemonic mode and display choice mode 失效
    具有交互助记模式和显示选择模式的日文文本输入系统

    公开(公告)号：US4543631A

    公开(公告)日：1985-09-24

    申请号：US304611

    申请日：1981-09-22

    申请人： Masaaki Kurosu ,  Takeshi Nakayama ,  Akira Nakajima ,  Yoshimitsu Ohshima

    发明人： Masaaki Kurosu ,  Takeshi Nakayama ,  Akira Nakajima ,  Yoshimitsu Ohshima

    IPC分类号： G06F17/22 ,  G06F3/00 ,  G06F3/01 ,  G06F3/02 ,  G06F3/14 ,  G06F15/38

    CPC分类号： G06F3/018

    摘要： A text inputting device includes a keyboard for inputting a string of characters of a first kind by keying keys and a first device for displaying characters of a second kind corresponding to the character string supplied from the keyboard as candidate characters and selecting a desired character of the second kind from the candidate characters for supplying it to a processor. A second device is also provided for reading a character of the second kind corresponding to a mnemonic code in the character string supplied from the keyboard for supplying it to the processor. In order to determine whether the first or second device is used, a selection switch is provided for selectively activating the first or the second device when a character of the second type is to be inputted. Further, to assist in teaching the mnemonic code, when the first device is selected, either visual or oral correspondence is provided between the selected candidate character and its corresponding mnemonic code. The invention is particularly useful in inputting complex texts such as Japanese or other language texts.

    摘要翻译： 文本输入装置包括用于通过键控键输入第一种字符串的键盘和用于显示与从键盘提供的字符串相对应的第二种类型的字符作为候选字符的第一设备，并且选择所需的字符 来自候选人物的第二种，用于将其提供给处理器。 还提供第二装置，用于读取与从键盘提供的字符串中的助记符相对应的第二种字符，以将其提供给处理器。 为了确定是否使用第一或第二装置，提供选择开关，用于当要输入第二类型的字符时选择性地激活第一或第二装置。 此外，为了帮助教授助记码，当选择第一设备时，在选择的候选字符与其对应的助记码之间提供视觉或口头对应。 本发明在输入诸如日语或其他语言文本的复杂文本中特别有用。