摘要:
By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.
摘要:
A system for designing visual information on a monitor unit which enables the use of the monitor unit manufactured at a reduced cost but assures rapid reproduction of the intended visual information. The monitor unit is utilized in combination with a programmable logic controller (PLC) for monitoring a task to be performed by I/O devices managed by the PLC. The monitor unit includes a display, a controller section, and a memory. The system includes an image design tool operating on a personal computer for creating a source display code of the visual information to be reproduced on the display. The image design tool has a conversion means which translates the source display code into a corresponding bitmapped image and exports the bitmapped image to the monitor unit for immediate reproduction of the visual information on the display. Consequently, the monitor unit can be dispensed with a costly component of translating the source image code into the bitmapped image, yet effecting rapid reproduction of the visual information on the display directly from the bitmapped image transferred from the image design tool.
摘要:
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle a in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.
摘要:
An object is to provide a drying machine capable of maintaining air discharged into a housing chamber while efficiently drying a matter to be dried in a short time. A drying machine provided with a housing chamber which houses the matter to be dried, and executing a drying operation of the matter to be dried in the housing chamber comprises: a gas cooler; an evaporator; a blower fan; an air circulation path for discharging air heated by the gas cooler into the housing chamber by the blower fan, sending the air passed through the housing chamber into the evaporator, and circulating the air in the gas cooler; and a closable outside air introduction port for mixing outside air with the air circulating in the air circulation path.
摘要:
An object is to provide a drying machine capable of reducing vibration generated by rotation of a rotary drum. There is provided a drying machine which executes a drying operation of a matter to be dried in a housing chamber constituted in an inner drum of a drum main body constituted of an outer drum and the inner drum disposed inside the outer drum, the drying machine comprising: a refrigerant circuit constituted by successively piping/connecting a compressor, a gas cooler, an expansion valve, and an evaporator in an annular shape; and an air circulation path for discharging air whose heat has been exchanged with the gas cooler into the housing chamber by a blower fan, and allowing the air which has passed through the housing chamber to exchange the heat with the evaporator, wherein a drum main body is attached to a base via a suspension, and the compressor is attached to a lower part of the drum main body.
摘要:
The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
摘要:
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
摘要:
There is disclosed a washing/drying machine having a purpose of shortening a time required for a washing operation and improving an operation efficiency, and comprising: an inner drum in which things to be washed are accommodated and in which a washing operation of the things to be washed and a drying operation after end of the washing operation are performed; a water supply passage for supplying water into the inner drum and a drainage passage for discharging the water from the inner drum in the washing operation; a refrigerant circuit in which a compressor, a gas cooler, an expansion valve, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant; and a blower for blowing air which has exchanged heat with the gas cooler into the inner drum to allow the air passed through the inner drum to exchange the heat with the evaporator in the drying operation.
摘要:
By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.
摘要:
TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.