公开(公告)号：US20090127233A1

公开(公告)日：2009-05-21

申请号：US12263310

申请日：2008-10-31

申请人： Kenji Asano ,  Hiroshi Morikazu ,  Kunimitsu Takahashi

发明人： Kenji Asano ,  Hiroshi Morikazu ,  Kunimitsu Takahashi

IPC分类号： B23K26/00

CPC分类号： G01N21/73 ,  B23K26/032 ,  B23K26/0853 ,  G01J3/443 ,  G01N2021/8416 ,  G01N2201/0697 ,  H01L21/67253

摘要： A laser beam machining apparatus including a chuck table for holding a wafer, and a laser beam irradiation unit for irradiating the wafer held on the chuck table with a pulsed laser beam. The laser beam machining apparatus further includes a plasma detecting part which includes a plasma receiving part for receiving a plasma generated by irradiation of the work with the laser beam radiated from the laser beam irradiation unit, and a spectrum analyzing part for analyzing the spectrum of the plasma received by the plasma receiving part; and a controller for determining the material of the work on the basis of a spectrum analysis signal from the spectrum analyzing part of the plasma detecting part and for controlling the laser beam irradiation unit.

摘要翻译： 一种激光束加工装置，包括用于保持晶片的卡盘台和激光束照射单元，用于用脉冲激光束照射保持在卡盘台上的晶片。 激光束加工装置还包括等离子体检测部件，其包括等离子体接收部件，用于接收由激光束照射单元辐射的激光束照射工件产生的等离子体;以及光谱分析部件，用于分析 由等离子体接收部接收的等离子体; 以及控制器，用于根据来自等离子体检测部分的光谱分析部分的光谱分析信号确定工件的材料并控制激光束照射单元。

公开(公告)号：US07368682B2

公开(公告)日：2008-05-06

申请号：US11313735

申请日：2005-12-22

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/00

CPC分类号： B23K26/702 ,  B23K26/08 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： A processing apparatus contains a holding member for holding a workpiece, and a laser beam shining member for shining a laser beam at the workpiece held on the holding member. The holding member has a holding plate and the workpiece is placed on the holding plate. The holding plate is composed of a plate-shaped body formed from polychlorotrifluoroethylene, and a film formed from polytetrafluoroethylene is superposed on an upper surface of the plate-shaped body.

摘要翻译： 一种处理装置包括用于保持工件的保持构件和用于在保持在保持构件上的工件上照射激光束的激光束照射构件。 保持构件具有保持板，并且工件被放置在保持板上。 保持板由聚氯三氟乙烯形成的板状体构成，由聚四氟乙烯形成的膜叠层在板状体的上表面上。

公开(公告)号：US20080067157A1

公开(公告)日：2008-03-20

申请号：US11898505

申请日：2007-09-12

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/38

CPC分类号： H01L21/76898 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.

摘要翻译： 一种通过从衬底的后表面侧施加激光束，形成通孔到达衬底的接合焊盘的方法，所述接合焊盘具有衬底前表面上的多个器件和每个器件上的接合焊盘，该激光束包括 通过将激光束施加到围绕基板后表面上的通孔形成区域的环形区域来形成环形槽的步骤; 以及通过将激光束从所述基板的后表面侧的所述环形槽包围的通路孔形成区域形成到达焊盘的通孔。

公开(公告)号：US20080003708A1

公开(公告)日：2008-01-03

申请号：US11819673

申请日：2007-06-28

申请人： Hitoshi Hoshino ,  Koji Yamaguchi ,  Kenji Furuta ,  Hiroshi Morikazu ,  Ryugo Oba ,  Yukio Morishige

发明人： Hitoshi Hoshino ,  Koji Yamaguchi ,  Kenji Furuta ,  Hiroshi Morikazu ,  Ryugo Oba ,  Yukio Morishige

IPC分类号： H01L21/30

CPC分类号： H01L33/0095 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 μJ to 10 μJ, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.

摘要翻译： 为了提供一种处理蓝宝石衬底的方法，其中如果通过激光束的照射将蓝宝石衬底分成单独的发光器件，则可以抑制发光器件的亮度降低，脉冲能量为0.6的脉冲激光束 在蓝宝石衬底上照射到毫微微秒范围内的非常小的脉冲宽度，同时聚光点位于与蓝宝石衬底上的预定划分线对应的每个区域内，形成影响区域， 从而激光束即使在4×10 13 W / cm 2至高达5×10 15 W / cm 2的高峰值功率密度下也能够照射 > 2 ，因此每个受影响的区域可以仅形成在蓝宝石衬底内的期望的凝聚点处，并且可以执行必要的处理，同时对氮化物半导体或蓝宝石衬底的损伤最小化。

公开(公告)号：US20070045254A1

公开(公告)日：2007-03-01

申请号：US11506911

申请日：2006-08-21

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/38

CPC分类号： B23K26/0853 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0626 ,  B23K26/142 ,  B23K26/147 ,  B23K26/382 ,  B23K26/40 ,  B23K26/703 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67092 ,  H01L21/76898

摘要： A wafer drilling method for forming via holes reaching electrodes in a wafer having a plurality of devices formed on the front surface of a substrate and electrodes formed on the devices by applying a pulse laser beam from the rear surface side of the substrate, wherein a material forming the substrate, a material forming the electrodes and a wavelength of the pulse laser beam are selected based on absorptivity for the wavelength of the pulse laser beam, and the material forming the substrate, the material forming the electrodes and the wavelength of the pulse laser beam are set to ensure that the absorptivity of the electrodes for the wavelength of the pulse laser beam becomes lower than the absorptivity of the substrate for the wavelength of the pulse laser beam.

摘要翻译： 一种晶片钻孔方法，用于形成通过从基板的后表面侧施加脉冲激光束而形成在基板的前表面上形成的多个器件的晶片中的电极和形成在器件上的电极的通孔， 形成基板，形成电极的材料和脉冲激光束的波长基于脉冲激光束的波长的吸收率，形成基板的材料，形成电极的材料和脉冲激光器的波长来选择 光束被设定为确保脉冲激光束的波长的电极的吸收率变得低于脉冲激光束的波长的基板的吸收率。

公开(公告)号：US20060203222A1

公开(公告)日：2006-09-14

申请号：US11360814

申请日：2006-02-24

申请人： Naoki Ohmiya ,  Satoshi Genda ,  Noboru Takeda ,  Koichi Takeyama ,  Yukio Morishige ,  Hiroshi Morikazu ,  Hiroshi Nomura

发明人： Naoki Ohmiya ,  Satoshi Genda ,  Noboru Takeda ,  Koichi Takeyama ,  Yukio Morishige ,  Hiroshi Morikazu ,  Hiroshi Nomura

IPC分类号： G03B27/58

CPC分类号： G03F7/707 ,  B23K26/40 ,  B23K37/0408 ,  B23K2101/40 ,  B23K2103/50 ,  B25B11/005 ,  B28D5/0094 ,  H01L21/6838

摘要： To prevent heating of a holding table that holds a wafer when using a laser beam to process a wafer, a wafer holding mechanism has a wafer holder having a holding surface that holds a wafer and a suction part formed on an outer peripheral side of the wafer holder, with the wafer held to the holding surface by a suction force transmitted to the holding surface from the suction part through an outer peripheral edge part of the wafer holder. The wafer can be held in place with suction without forming fine holes that penetrate the wafer holder from a front surface thereof to a back surface thereof, and therefore a material of good permeability and dispersibility with respect to the wavelength of the laser light can be selected for the wafer holder.

摘要翻译： 为了防止在使用激光束处理晶片时保持晶片的保持台的加热，晶片保持机构具有晶片保持器，该晶片保持器具有保持晶片的保持表面和形成在晶片的外周侧的吸引部分 保持器，其中晶片通过来自抽吸部分的透镜通过晶片保持器的外周边缘部分传递到保持表面的吸力保持在保持表面上。 可以通过抽吸将晶片保持在适当位置，而不会形成从其前表面到其后表面穿透晶片保持器的细孔，因此可以选择相对于激光的波长具有良好的渗透性和分散性的材料 用于晶片座。

公开(公告)号：US08779325B2

公开(公告)日：2014-07-15

申请号：US12073271

申请日：2008-03-03

申请人： Keiji Nomaru ,  Yutaka Kobayashi ,  Hiroshi Morikazu

发明人： Keiji Nomaru ,  Yutaka Kobayashi ,  Hiroshi Morikazu

IPC分类号： B23K26/02 ,  B23K26/00

CPC分类号： B23K26/355 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0853 ,  B23K26/0869 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser beam processing machine includes a laser beam application device and a controller. The controller controls deflecting of the optical axis of a pulse laser beam from the laser beam application device in the processing-feed direction according to a plurality of processing position coordinates, and according to the frequency of the beam, to ensure that there is a predetermined time interval between pulses applied to the same processing position coordinates. One pulse is applied at a time to each of the plurality of processing position coordinates.

摘要翻译： 激光束处理机包括激光束施加装置和控制器。 控制器根据多个处理位置坐标以及根据光束的频率来控制来自激光束施加装置的激光束施加装置的脉冲激光束的光轴的偏转，以确保存在预定的 施加到相同处理位置坐标的脉冲之间的时间间隔。 一次施加一个脉冲到多个处理位置坐标中的每一个。

公开(公告)号：US20130048617A1

公开(公告)日：2013-02-28

申请号：US13592974

申请日：2012-08-23

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/38

CPC分类号： B23K26/032 ,  B23K26/0006 ,  B23K26/0626 ,  B23K26/0853 ,  B23K26/361 ,  B23K26/382 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/16 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76802

摘要： A hole forming method of forming a laser processed hole in a workpiece configured by bonding a first member formed of a first material and a second member formed of a second material. The hole forming method includes a minimum shot number setting step of setting as a minimum value the number of shots of a pulsed laser beam applied to the workpiece at the time the spectral wavelength of plasma has changed from the spectral wavelength inherent in the first material to the spectral wavelength inherent in the second material, and a maximum shot number setting step of setting as a maximum value the number of shots of the pulsed laser beam at the time the spectral wavelength of the plasma has completely changed. In a hole forming step, the application of the pulsed laser beam is stopped in the case that the number of shots has reached the minimum value and the spectral wavelength of the plasma has changed whereas the application of the pulsed laser beam is continued until the number of shots reaches the maximum value in the case that the spectral wavelength of the plasma has not changed even after the number of shots has reached the minimum value.

摘要翻译： 一种在工件上形成激光加工孔的孔形成方法，其通过将由第一材料形成的第一构件和由第二材料形成的第二构件接合而构成。 孔形成方法包括最小喷射数设定步骤，在等离子体的光谱波长从第一材料固有的光谱波长变化到第一材料固有的光谱波长时，将施加于工件的脉冲激光束的照射次数设定为最小值， 第二材料中固有的光谱波长，以及在等离子体的光谱波长完全改变时将脉冲激光束的拍摄次数设定为最大值的最大拍摄数设定步骤。 在孔形成步骤中，在拍摄次数已经达到最小值并且等离子体的光谱波长已经改变的情况下，脉冲激光束的施加被停止，而脉冲激光束的应用持续到数字 即使在拍摄次数达到最小值之后，等离子体的光谱波长也没有变化的情况下的拍摄数达到最大值。

公开(公告)号：US08252667B2

公开(公告)日：2012-08-28

申请号：US12771749

申请日：2010-04-30

申请人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

IPC分类号： H01L21/301

CPC分类号： H01L21/78 ,  B23K26/0006 ,  B23K26/0626 ,  B23K26/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.

摘要翻译： 一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽 晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。

公开(公告)号：US08049133B2

公开(公告)日：2011-11-01

申请号：US12110965

申请日：2008-04-28

申请人： Ryugo Oba ,  Hiroshi Morikazu

发明人： Ryugo Oba ,  Hiroshi Morikazu

IPC分类号： B23K26/073

CPC分类号： B23K26/0736 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/067 ,  B23K26/0676 ,  B23K26/0853

摘要： A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens disposed between the beam splitter and the second quarter-wave plate.

摘要翻译： 一种激光束加工设备，包括激光束照射单元，所述激光束照射单元包括：用于振荡激光束的激光束振荡器; 由激光束振荡器振荡的激光束通过该分束器被分成第一激光束和第二激光束; 设置在激光束振荡器和分束器之间的旋转半波片; 聚光透镜，设置在第一光路中，用于引导由分束器分裂的第一激光束; 第一反射镜，设置在第二光路中，用于引导由分束器分裂的第二激光束; 设置在分束器和第一反射镜之间的第一四分之一波长板; 第二反射镜，设置在第三光路中，用于将通过第二光路返回到分束器的第二激光束分离; 设置在分束器和第二反射镜之间的第二四分之一波片; 以及设置在分束器和第二四分之一波片之间的柱面透镜。