公开(公告)号：US20070087539A1

公开(公告)日：2007-04-19

申请号：US10579036

申请日：2004-11-08

申请人： Kenji Kohiro ,  Tomoyuki Takada

发明人： Kenji Kohiro ,  Tomoyuki Takada

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/4763 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01L21/02461 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262

摘要： A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 μm/h-2 μm/h.

摘要翻译： 提供了一种制造具有较少凹陷缺陷的化合物半导体外延衬底的方法。 制造化合物半导体外延衬底的方法包括在InP单晶衬底上或与InP单晶衬底晶格匹配的外延层上外延生长InGaAs层的步骤，在V / ：10-100，生长温度：630℃-700℃，生长速度：0.6mum / h-2mum / h。

公开(公告)号：US06225195B1

公开(公告)日：2001-05-01

申请号：US09127922

申请日：1998-08-03

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Masaya Shimizu

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Masaya Shimizu

IPC分类号： C30B2300

CPC分类号： H01L33/325 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method for manufacturing a group III-V compound semiconductor represented by the general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.

摘要翻译： 一种用通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1，0≤z≤1）表示的III-V族化合物半导体的制造方法， 1）通过金属有机气相外延法提供。 III-V族化合物半导体具有由p型掺杂剂非掺杂层构成的半导体层和包含p型掺杂剂掺杂层的半导体层。 在该方法中，用于生长由p型掺杂剂非掺杂层组成的半导体层的反应器和用于掺杂p型掺杂剂的反应器是相互不同的。

公开(公告)号：US5980632A

公开(公告)日：1999-11-09

申请号：US219115

申请日：1998-12-23

申请人： Yasushi Iyechika ,  Toshihisa Katamime ,  Yoshinobu Ono ,  Tomoyuki Takada

发明人： Yasushi Iyechika ,  Toshihisa Katamime ,  Yoshinobu Ono ,  Tomoyuki Takada

IPC分类号： H01L33/00 ,  C30B25/18

CPC分类号： H01L33/007

摘要： A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.

摘要翻译： 一种制备由通式In x Ga y Al z N表示的III-V族化合物半导体的方法（假定x + y + z =1,0,0≤x≤1,0,0≤y≤1,0 使用用于形成半导体的支撑构件，其中所述构件构成通过将石墨基底材料转化为SiC而获得的SiC。 在另一个实施方案中，所述构件包括石墨-SiC复合材料，其中至少石墨基底的表面层部分转化为SiC。 本发明的成员具有优异的化学和机械稳定性，从而使其在制备化合物半导体的高生产率生产装置中是有用的。

公开(公告)号：US08184662B2

公开(公告)日：2012-05-22

申请号：US12035390

申请日：2008-02-21

申请人： Makoto Umehara ,  Tomoyuki Takada

发明人： Makoto Umehara ,  Tomoyuki Takada

IPC分类号： H04J3/24

CPC分类号： H04S3/008 ,  H04L5/023 ,  H04L27/2605 ,  H04L27/2626 ,  H04L27/2647 ,  H04L27/2655

摘要： Data is transmitted by using continuous frames each of which includes a variable-length part having a length that varies depending on an input period and a fixed-length part containing data of one input period. The transmitted continuous frames are received, a frame period is detected, and data is reproduced based on the detected frame period.

摘要翻译： 通过使用连续帧来发送数据，每个连续帧包括具有根据输入周期而变化的长度的可变长度部分和包含一个输入周期的数据的固定长度部分。 接收发送的连续帧，检测帧周期，并且基于检测到的帧周期再现数据。

公开(公告)号：US07929858B2

公开(公告)日：2011-04-19

申请号：US10935135

申请日：2004-09-08

申请人： Akira Ezawa ,  Keiji Osawa ,  Akira Yamamoto ,  Takayuki Uchiyama ,  Yousuke Kowno ,  Katsumasa Nishijima ,  Tomoyuki Takada

发明人： Akira Ezawa ,  Keiji Osawa ,  Akira Yamamoto ,  Takayuki Uchiyama ,  Yousuke Kowno ,  Katsumasa Nishijima ,  Tomoyuki Takada

IPC分类号： G03B17/02

CPC分类号： H04N5/2253

摘要： An image-capturing element that receives light of a subject image entering within a camera body through an interchangeable photographic lens is packaged and is mounted at the camera body via a holder. A camera-side mounting surface and a holder-side mounting surface are machined in advance and formed respectively relative to the mounting surface for the photographic lens formed at the camera body and the light-receiving surface of the image-capturing element. By mounting the image-capturing apparatus with the camera-side mounting surface and the holder-side mounting surface placed in contact with each other at the camera body using screws, the light-receiving surface is aligned with the image-forming position of the photographic lens.

摘要翻译： 通过可互换的摄影镜头接收进入照相机体内的被摄体图像的光的图像拍摄元件被封装并通过保持器安装在照相机主体上。 相机侧安装面和保持器侧安装面相对于形成在照相机主体和摄​​像元件的受光面上的摄影镜头的安装面分别进行加工。 通过使用螺钉将摄像机侧安装面和保持器侧安装面安装在摄像机主体上彼此接触的摄像装置，受光面与照相机的图像形成位置对准 镜片。

公开(公告)号：US20080219295A1

公开(公告)日：2008-09-11

申请号：US12035390

申请日：2008-02-21

申请人： Makoto Umehara ,  Tomoyuki Takada

发明人： Makoto Umehara ,  Tomoyuki Takada

IPC分类号： H04J3/06

CPC分类号： H04S3/008 ,  H04L5/023 ,  H04L27/2605 ,  H04L27/2626 ,  H04L27/2647 ,  H04L27/2655

摘要： Data is transmitted by using continuous frames each of which includes a variable-length part having a length that varies depending on an input period and a fixed-length part containing data of one input period. The transmitted continuous frames are received, a frame period is detected, and data is reproduced based on the detected frame period.

摘要翻译： 通过使用连续帧来发送数据，每个连续帧包括具有根据输入周期而变化的长度的可变长度部分和包含一个输入周期的数据的固定长度部分。 接收发送的连续帧，检测帧周期，并且基于检测到的帧周期再现数据。

公开(公告)号：US06914274B2

公开(公告)日：2005-07-05

申请号：US10394068

申请日：2003-03-24

申请人： Yuichi Hiroyama ,  Tomoyuki Takada ,  Osamu Ichikawa

发明人： Yuichi Hiroyama ,  Tomoyuki Takada ,  Osamu Ichikawa

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/0817

摘要： A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.

摘要翻译： 一种薄膜半导体外延基板，包括在所述基板上形成为薄膜半导体外延层的基板和副集电极层，集电极层，基极层和发射极层，其中硼（B） 在包含所述副集电极层和所述集电极层的层部分的至少一部分中存在。

公开(公告)号：US06803961B1

公开(公告)日：2004-10-12

申请号：US09501660

申请日：2000-02-10

申请人： Akira Ezawa ,  Keiji Osawa ,  Akira Yamamoto ,  Takayuki Uchiyama ,  Yousuke Kowno ,  Katsumasa Nishijima ,  Tomoyuki Takada

发明人： Akira Ezawa ,  Keiji Osawa ,  Akira Yamamoto ,  Takayuki Uchiyama ,  Yousuke Kowno ,  Katsumasa Nishijima ,  Tomoyuki Takada

IPC分类号： H04N5225

CPC分类号： H04N5/2253

摘要： An image-capturing element that receives light of a subject image entering within a camera body through an interchangeable photographic lens is packaged and is mounted at the camera body via a holder. A camera-side mounting surface and a holder-side mounting surface are machined in advance and formed respectively relative to the mounting surface for the photographic lens formed at the camera body and the light-receiving surface of the image-capturing element. By mounting the image-capturing apparatus with the camera-side mounting surface and the holder-side mounting surface placed in contact with each other at the camera body using screws, the light-receiving surface is aligned with the image-forming position of the photographic lens.

摘要翻译： 通过可互换的摄影镜头接收进入照相机体内的被摄体图像的光的图像拍摄元件被封装并通过保持器安装在照相机主体上。 相机侧安装面和保持器侧安装面相对于形成在照相机主体和摄​​像元件的受光面上的摄影镜头的安装面分别进行加工。 通过使用螺钉将摄像机侧安装面和保持器侧安装面安装在摄像机主体上彼此接触的摄像装置，受光面与照相机的图像形成位置对准 镜片。

公开(公告)号：US6104044A

公开(公告)日：2000-08-15

申请号：US861820

申请日：1997-05-23

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

IPC分类号： H01L21/285 ,  H01B1/16 ,  H01L21/28 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/205 ,  H01L27/15 ,  H01S3/19

CPC分类号： H01L33/40 ,  H01L29/452 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/32341

摘要： Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.

摘要翻译： 公开了由通式In x Ga y Al z N表示的用于III-V族化合物半导体的电极材料（假定x + y + z =1,0,0≤x≤1,0≤y≤1，和 掺杂有能够获得良好的欧姆接触的p型杂质，以及使用其的电极，从而可以降低使用化合物半导体的器件的驱动电压。 电极材料是至少包含Ca和贵金属的金属，其中Ca和贵金属的重量总量不小于50重量％且不大于100重量％，基于 整个电极材料。

公开(公告)号：US08384822B2

公开(公告)日：2013-02-26

申请号：US13067388

申请日：2011-05-27

申请人： Hitoshi Nishimoto ,  Yoshiaki Tanabe ,  Tomoyuki Takada ,  Makoto Kohinata

发明人： Hitoshi Nishimoto ,  Yoshiaki Tanabe ,  Tomoyuki Takada ,  Makoto Kohinata

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/23209

摘要： A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.

摘要翻译： 数码相机包括：镜盒，其限定将摄影镜头的光束引导到成像单元的空间; 反射镜单元，其布置在反射镜盒的内部并且被配置为在观察位置之间旋转，其中镜单元插入到从摄影镜头到成像单元的摄影光路中以反射光通量，以及拍摄位置 镜单元从摄影光路缩回; 以及从反射镜单元旋转时移动的反射镜盒空气排出的开口部。