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52 条记录 (耗时 0.014 秒)

    Method for the production of polyimide powder
    31.
    发明授权
    Method for the production of polyimide powder 失效
    聚酰亚胺粉末生产方法

    公开(公告)号：US4464489A

    公开(公告)日：1984-08-07

    申请号：US560304

    申请日：1983-12-12

    申请人： Yuzuru Noda ,  Toshio Nakajima

    发明人： Yuzuru Noda ,  Toshio Nakajima

    IPC分类号： C08G18/00 ,  C08G18/34 ,  C08G73/10 ,  C08J3/12 ,  C08J9/02

    CPC分类号： C08J3/12 ,  C08G18/346 ,  C08G73/1035 ,  C08J2379/08

    摘要： Spherical porous polyimide powder having an average particle diameter of 1 to 20 .mu.m which is infusible and insoluble in organic solvents is produced by polymerizing an aromatic tetracarboxylic acid dianhydride and an aromatic polyisocyanate in an organic solvent at a temperature of 100.degree. to 200.degree. C. and in the presence of a tertiary amine catalyst to form polyimide particles in the form of slurry, filtering or centrifuging said polyimide particles, and washing the resulting polyimide particles with an organic solvent.

    摘要翻译： 不溶于有机溶剂的平均粒径为1〜20μm的球状多孔性聚酰亚胺粉末是通过在有机溶剂中在100〜200℃的温度下使芳香族四羧酸二酐和芳香族多异氰酸酯进行聚合而得到的 并在叔胺催化剂存在下形成浆料形式的聚酰亚胺颗粒，过滤或离心所述聚酰亚胺颗粒，并用有机溶剂洗涤所得聚酰亚胺颗粒。

    Process for producing 5-chloro-.beta.-trifluoromethylpyridines
    32.
    发明授权
    Process for producing 5-chloro-.beta.-trifluoromethylpyridines 失效
    生产5-氯-β-三氟甲基吡啶的方法

    公开(公告)号：US4420618A

    公开(公告)日：1983-12-13

    申请号：US401744

    申请日：1982-07-26

    申请人： Isao Yokomichi ,  Takahiro Haga ,  Rikuo Nasu ,  Kuniaki Nagatani ,  Toshio Nakajima

    发明人： Isao Yokomichi ,  Takahiro Haga ,  Rikuo Nasu ,  Kuniaki Nagatani ,  Toshio Nakajima

    IPC分类号： B01J27/00 ,  B01J27/10 ,  B01J27/128 ,  B01J27/132 ,  B01J27/135 ,  C07B61/00 ,  C07D213/61 ,  C07D213/26

    CPC分类号： C07D213/61

    摘要： 5,6-Dichloro-.beta.-trifluoromethylpyridine or 2,5,6-trichloro-.beta.-trifluoromethylpyridine is produced by reacting 6-chloro-.beta.-trifluoromethylpyridine or 2,6-dichloro-.beta.-trifluoromethylpyridine with chlorine gas to chlorinate the 5-position of pyridine nucleus thereof:(1) at a temperature of 100.degree. C. to 250.degree. C. and at least sufficient amount of chlorine for the reaction;(2) in the presence of the catalyst of amount of at least 40% by weight (based on the 6-chloro or/and 2,6-dichloro-.beta.-trifluoromethylpyridine), the catalyst being chlorides a metallic element selected from the group consisting of iron, tungsten, molybdenum, titanium, and antimony.

    摘要翻译： 通过6-氯-β-三氟甲基吡啶或2,6-二氯-α-三氟甲基吡啶与氯气反应生成5,6-二氯-β-三氟甲基吡啶或2,5,6-三氯-β-三氟甲基吡啶， 吡啶核的位置：（1）在100℃至250℃的温度和至少足够量的氯用于反应; （2）在催化剂存在下，至少40重量％（基于6-氯或/和2,6-二氯-β-三氟甲基吡啶），催化剂是氯化物，选自下组的金属元素 由铁，钨，钼，钛和锑组成。

    Semiconductor device, method of manufacturing the same, and power module
    37.
    发明授权
    Semiconductor device, method of manufacturing the same, and power module 有权
    半导体装置及其制造方法以及电源模块

    公开(公告)号：US08921925B2

    公开(公告)日：2014-12-30

    申请号：US13339072

    申请日：2011-12-28

    申请人： Toshio Nakajima

    发明人： Toshio Nakajima

    IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/32 ,  H01L21/263

    CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/0634 ,  H01L29/0684 ,  H01L29/0696 ,  H01L29/32 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/7827 ,  H02M7/5387 ,  H02P6/14 ,  H02P27/06

    摘要： A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.

    摘要翻译： 半导体器件包括n型漏极层，设置在n型漏极层上的n型基极层，部分地形成在n型漏极层的表面层部分中的p型基极层和n型源极层 基极层和p型基极层，形成在n型源极层和n型基极层之间的p型基极层的表面上的栅极绝缘膜，形成在栅极绝缘体上的栅电极 覆盖栅极绝缘膜的p型基底层的膜，从n型基极层形成的p型列层，从p型基极层朝向n型漏极层延伸，耗尽层缓和区域 布置在p型列层和n型漏极层之间，并且包括转换为馈电体的第一重子，连接到n型源极层的源电极和连接到n型漏极层的漏电极。

    Electrode tip magazine for spot welder
    38.
    发明授权
    Electrode tip magazine for spot welder 有权
    电焊机刀库，用于点焊机

    公开(公告)号：US08809726B2

    公开(公告)日：2014-08-19

    申请号：US12707716

    申请日：2010-02-18

    申请人： Toshio Nakajima ,  Takeo Fukizawa

    发明人： Toshio Nakajima ,  Takeo Fukizawa

    IPC分类号： B23K9/28 ,  B23K11/30

    CPC分类号： B23K11/3072

    摘要： An electrode tip magazine for a spot welder that does not interfere with the welding gun is provided. The magazine includes a magazine body formed with a storage part slidably aligning and storing a plurality of electrode tips therein, one end of this storage part serving as an externally opened supply port, a push-out member disposed to be freely slidable between both ends inside the storage part, a pulley disposed at a position adjacent to the supply port of the magazine body, a spiral spring disposed at a position at the other end of the storage part of the magazine body, and a wire connecting a distal end of the spiral spring and the push-out member with an intermediate portion thereof being wound around the pulley so as to always pull the push-out member toward the supply port by a biasing force of the spiral spring.

    摘要翻译： 提供了一种不影响焊枪的点焊机的电极头料仓。 该仓库包括一个盒体，形成有存储部分，可滑动地对准和存储多个电极头，该储存部分的一端用作外部供给口;推出部件，设置成可在两端内部自由滑动 储存部分，设置在与料盒主体的供给口相邻的位置处的皮带，设置在储料盒主体的储存部的另一端的位置处的螺旋弹簧和连接螺旋的远端的线 弹簧和推出构件，其中间部分缠绕在滑轮上，以便始终通过螺旋弹簧的作用力将推出构件拉向供给口。

    Semiconductor device
    39.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08178910B2

    公开(公告)日：2012-05-15

    申请号：US12923062

    申请日：2010-08-31

    申请人： Toshio Nakajima

    发明人： Toshio Nakajima

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7806 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095

    摘要： The semiconductor device according to the present invention includes an SJMOSFET having a plurality of base regions formed at an interval from each other and an SBD (Schottky Barrier Diode) having a Schottky junction between the plurality of base regions. The SBD is provided in parallel with a parasitic diode of the SJMOSFET.

    摘要翻译： 根据本发明的半导体器件包括具有以彼此间隔形成的多个基极区域的SJMOSFET和在多个基极区域之间具有肖特基结的SBD（肖特基势垒二极管）。 SBD与SJMOSFET的寄生二极管并联提供。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME
    40.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110147829A1

    公开(公告)日：2011-06-23

    申请号：US12737912

    申请日：2009-08-31

    申请人： Toshio Nakajima

    发明人： Toshio Nakajima

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/265 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66712 ,  H01L29/7805

    摘要： Provided are a semiconductor device which can shorten reverse recovery time without increasing leakage current between the drain and the source, and a fabrication method for such semiconductor device.The semiconductor device includes: a first base layer (12); a drain layer (10) disposed on the back side surface of the first base layer (12); a second base layer (16) formed on the surface of the first base layer (12); a source layer (18) formed on the surface of the second base layer (16); a gate insulating film (20) disposed on the surface of both the source layer (18) and the second base layer (16); a gate electrode (22) disposed on the gate insulating film (20); a column layer (14) formed in the first base layer (12) of the lower part of both the second base layer (16) and the source layer (18) by opposing the drain layer (10); a drain electrode (28) disposed in the drain layer (10); and a source electrode (26) disposed on both the source layer and the second base layer, wherein heavy particle irradiation is performed to the column layer (14) to form a trap level locally.

    摘要翻译： 提供一种可以缩短反向恢复时间而不增加漏极和源极之间的漏电流的半导体器件，以及这种半导体器件的制造方法。 半导体器件包括：第一基极层（12）; 布置在所述第一基底层（12）的背侧表面上的漏极层（10）; 形成在所述第一基底层（12）的表面上的第二基底层（16）; 形成在所述第二基底层（16）的表面上的源极层（18）; 设置在源极层（18）和第二基极层（16）的表面上的栅极绝缘膜（20）; 设置在栅极绝缘膜（20）上的栅极（22）; 通过与漏极层（10）相对形成在第二基底层（16）和源极层（18）的下部的第一基底层（12）中形成的列层（14）。 布置在漏极层（10）中的漏电极（28）; 以及源极电极（26），其设置在源极层和第二基底层两者上，其中对所述列层（14）进行重粒子照射以局部形成阱层。