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公开(公告)号：US5643688A
公开(公告)日：1997-07-01
申请号：US402361
申请日：1995-03-13
申请人： Tsuguo Fukuda , Tatsuo Kawaguchi , Minoru Imaeda
发明人： Tsuguo Fukuda , Tatsuo Kawaguchi , Minoru Imaeda
CPC分类号： G02B6/131 , C30B19/02 , C30B29/30 , G02B2006/1204
摘要： Optoelectric article includes a substrate made of an optoelectric single crystal and a film of a single crystal of lithium niobate formed on the substrate by a liquid phase epitaxial process, wherein a ratio of lithium/niobium of a composition of the film of the lithium niobate single crystal falls in a range of 48.6/51.4 to 49.5 to 50.5 or 50.5/49.5 to 52.3/47.7.
摘要翻译： 光电制品包括通过液相外延工艺在基板上形成的由光电单晶制成的基板和铌酸锂单晶的膜，其中锂/铌酸锂薄膜的组成的锂/铌的比例为 晶体在48.6 / 51.4至49.5至50.5或50.5 / 49.5至52.3 / 47.7的范围内。
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公开(公告)号：US5458083A
公开(公告)日：1995-10-17
申请号：US218744
申请日：1994-03-28
申请人： Tsuguo Fukuda , Keigo Hoshikawa , Hiroshi Machida
发明人： Tsuguo Fukuda , Keigo Hoshikawa , Hiroshi Machida
摘要： A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.
摘要翻译： 公开了生长一种单一氧化物晶体的棒形式的方法。 该方法使用狭缝模具，其被放置在具有起始熔体的坩埚中。 在旋转的同时，用晶种接种熔体。 所得到的晶体将具有与模具的上表面的形状相同的截面形状。
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公开(公告)号：US5431124A
公开(公告)日：1995-07-11
申请号：US182574
申请日：1994-01-18
申请人： Hiroshi Machida , Tsuguo Fukuda , Keigo Hoshikawa
发明人： Hiroshi Machida , Tsuguo Fukuda , Keigo Hoshikawa
CPC分类号： C30B15/34 , C30B15/00 , C30B29/16 , Y10T117/1036
摘要： A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.
摘要翻译： 通过EFG晶体生长方法获得不具有大倾斜晶界的金红石单晶，其中在进料熔体2中装有切口的模具，以将熔体通过狭缝传送直到其到达模具的上表面， 从而通过拉伸生长获得与构型相一致的单晶。
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公开(公告)号：US4539067A
公开(公告)日：1985-09-03
申请号：US508091
申请日：1983-06-27
IPC分类号： C30B15/28 , C30B27/02 , C30B29/40 , H01L21/208
CPC分类号： C30B15/28 , C30B27/02 , Y10T117/1008 , Y10T117/1068 , Y10T117/1072
摘要： The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit. At the same time, the heating control circuit generates a heating control signal to a heating device in response to a program signal which is generated from a program signal generator. In response to the output signal from the heating device, a heater which controls the temperature of the melt held in a vessel and which is arranged outside the vessel is heated according to the program.
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35.发明授权
公开(公告)号：US4496424A
公开(公告)日：1985-01-29
申请号：US455734
申请日：1983-01-05
申请人： Kazutaka Terashima , Tsuguo Fukuda
发明人： Kazutaka Terashima , Tsuguo Fukuda
摘要： A III-V compound semiconducting single crystal is manufactured by a method using an encapsulant, which method comprises allowing the molten mass of a material for the crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling the crystal thereby causing the molten mass to generate bubbles and allowing the departing bubbles to entrain impurities from the molten mass, bringing a seed crystal into contact with the molten mass, applying a potential to the molten mass thereby determining the impurity concentration of the molten mass based on the results of the measurement and, after the impurity concentration of the molten mass determined as described above has reached a prescribed level, initiating the work of pulling the crystal from the molten mass.
摘要翻译： 通过使用密封剂的方法制造III-V族化合物半导体单晶，该方法包括将在高压下预先熔化的晶体的熔融物质放置在低于要施加的压力的压力下 拉动晶体从而引起熔融物质产生气泡并允许脱出的气泡夹带熔融物质的杂质，使晶种与熔融物质接触，向熔融物质施加电位，从而确定杂质浓度 的熔融质量，并且在如上所述确定的熔融物质的杂质浓度达到规定水平之后，开始从熔融物质中拉出晶体的工作。
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36.发明申请METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE IN THE METHOD 审中-公开用于生产氮化物单晶和自动化的方法用于该方法公开(公告)号：US20140205840A1
公开(公告)日：2014-07-24
申请号：US14128474
申请日：2011-06-23
申请人： Kensuke Aoki , Kazuo Yoshida , Katsuhito Nakamura , Tsuguo Fukuda
发明人： Kensuke Aoki , Kazuo Yoshida , Katsuhito Nakamura , Tsuguo Fukuda
CPC分类号： C30B7/105 , C01B21/0632 , C30B29/406 , Y10T117/1096 , Y10T428/2982
摘要： There is provided a novel method for producing a nitride single crystal with both a rapid crystal growth rate and high crystal quality, as well as a novel autoclave that can be used in the method. The invention provides a method for producing a Ga-containing nitride single crystal by an ammonothermal method, comprising introducing at least a starting material, an acidic mineralizer and ammonia into an autoclave, and then growing a Ga-containing nitride single crystal under conditions wherein the temperature (T1) at the single crystal growth site is 600° C. to 850° C., the temperature (T1) at the single crystal growth site and the temperature (T2) at the starting material feeder site are in the relationship T1>T2, and the pressure in the autoclave is 40 MPa to 250 MPa, as well as an autoclave that can be used in the method.
摘要翻译： 提供了一种用于生产具有快速晶体生长速率和高晶体质量的氮化物单晶的新颖方法，以及可用于该方法的新型高压釜。 本发明提供了一种通过氨热法制备含Ga氮化物单晶的方法，包括将至少一种起始材料，酸性矿化剂和氨引入高压釜中，然后在其中使含Ga的氮化物单晶生长 单晶生长部位的温度（T1）为600℃〜850℃，单晶生长部位的温度（T1）和原料供给部位的温度（T2）为T1> T2，高压釜中的压力为40MPa〜250MPa，以及可用于该方法的高压釜。
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37.发明申请SINGLE CRYSTAL OF MAGNESIUM FLUORIDE, OPTICAL MEMBER AND OPTICAL ELEMENT COMPRISING THE SAME 审中-公开氟化镁，光学部件和包含其的光学元件的单晶公开(公告)号：US20120057222A1
公开(公告)日：2012-03-08
申请号：US12875767
申请日：2010-09-03
CPC分类号： G02B1/02 , C30B15/00 , C30B29/12 , Y10T428/24628
摘要： A single crystal of magnesium fluoride having a large diameter and excellent optical properties such as internal transmittance and long term laser durability, and suited for use as optical elements for exposing apparatus. The single crystal of magnesium fluoride is of a cylindrical shape having a straight body portion of a diameter of not smaller than 10 cm, has an internal transmittance of at least 85%/cm at 120 nm and at least 98%/cm at 193 nm and has, desirably, an induced absorption of not larger than 0.0030 absorption/cm at 255 nm and, particularly desirably, not larger than 0.0010 absorption/cm. at 255 nm immediately after the irradiation with 2 million shorts of an ArF excimer laser of an energy density of 30 mJ/cm2 and 2000 Hz. The invention further provides an optical element for optical lithography comprising the single crystal and an optical member for vacuum ultraviolet ray transmission comprising the single crystal.
摘要翻译： 具有大直径且具有优异的光学性质如内部透射率和长期激光耐久性的氟化镁的单晶，并且适合用作曝光装置的光学元件。 氟化镁的单晶是具有直径不小于10cm的直体部分的圆柱形状，在120nm处具有至少85％/ cm的内部透射率，在193nm具有至少98％/ cm 3的内部透射率 并且理想地，在255nm处，特别优选不大于0.0010吸收/ cm 3的吸收/ cm 3的诱导吸收。 在用200万短的能量密度为30mJ / cm 2和2000Hz的ArF准分子激光器照射后立即在255nm处。 本发明还提供了一种用于光学光刻的光学元件，其包括单晶和用于包括单晶的真空紫外线透射的光学构件。
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公开(公告)号：US20110000423A1
公开(公告)日：2011-01-06
申请号：US12805786
申请日：2010-08-19
IPC分类号： C30B15/08
CPC分类号： C30B15/08 , C01B9/08 , C30B29/12 , Y10T117/10
摘要： Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.
摘要翻译： 提供了能够在非常短的时间内产生氟化物晶体的装置，以及适用于使用该装置生产氟化物晶体的方法。 该设备包括一个室，一个窗户材料等，并且被改造成使得它可以从室中排出空气以在那里提供高度的真空度。 该装置还包括坩埚，其底部具有穿孔。 调整穿孔的毛细管部分以促进晶种与熔体的接触。 通过使用该装置，可以在短时间内稳定地生产高质量的氟化物单晶。
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公开(公告)号：US20070056508A1
公开(公告)日：2007-03-15
申请号：US10554424
申请日：2004-04-23
CPC分类号： C30B15/08 , C01B9/08 , C30B29/12 , Y10T117/10
摘要： An apparatus for producing a fluoride crystal, which has a chamber, a window material and the like capable of dealing with the fluoride, is equipped with facilities necessary for high vacuum evacuation, and uses a crucible in which the capillary portion of the hole formed in the bottom thereof is so controlled for a seed crystal and a molten material to be easily contacted to each other; and a method for producing a fluoride crystal comprising using the apparatus. The apparatus allows the production of a single crystal of a fluoride having high quality in a extremely short time with stability.
摘要翻译： 具有能够处理氟化物的室，窗材料等的氟化物晶体的制造装置具有高真空排气所需的设备，并且使用坩埚，其中形成有孔的毛细管部分 其底部被如此控制以使晶种和熔融材料彼此容易接触; 以及使用该装置的氟化物晶体的制造方法。 该装置允许在极短的时间内稳定地生产具有高质量的氟化物的单晶。
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40.发明授权Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US6072118A
公开(公告)日：2000-06-06
申请号：US897945
申请日：1997-07-24
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译： 一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少 生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉 熔融物通过生长部件的尖端部分。
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