公开(公告)号：US20120057222A1

公开(公告)日：2012-03-08

申请号：US12875767

申请日：2010-09-03

申请人： Yasuhiro HASHIMOTO ,  Masao Ariyuki ,  Naoto Mochizuki ,  Tsuguo Fukuda

发明人： Yasuhiro HASHIMOTO ,  Masao Ariyuki ,  Naoto Mochizuki ,  Tsuguo Fukuda

IPC分类号： G02B5/30 ,  C01F5/28 ,  B32B1/00

CPC分类号： G02B1/02 ,  C30B15/00 ,  C30B29/12 ,  Y10T428/24628

摘要： A single crystal of magnesium fluoride having a large diameter and excellent optical properties such as internal transmittance and long term laser durability, and suited for use as optical elements for exposing apparatus. The single crystal of magnesium fluoride is of a cylindrical shape having a straight body portion of a diameter of not smaller than 10 cm, has an internal transmittance of at least 85%/cm at 120 nm and at least 98%/cm at 193 nm and has, desirably, an induced absorption of not larger than 0.0030 absorption/cm at 255 nm and, particularly desirably, not larger than 0.0010 absorption/cm. at 255 nm immediately after the irradiation with 2 million shorts of an ArF excimer laser of an energy density of 30 mJ/cm2 and 2000 Hz. The invention further provides an optical element for optical lithography comprising the single crystal and an optical member for vacuum ultraviolet ray transmission comprising the single crystal.

摘要翻译： 具有大直径且具有优异的光学性质如内部透射率和长期激光耐久性的氟化镁的单晶，并且适合用作曝光装置的光学元件。 氟化镁的单晶是具有直径不小于10cm的直体部分的圆柱形状，在120nm处具有至少85％/ cm的内部透射率，在193nm具有至少98％/ cm 3的内部透射率 并且理想地，在255nm处，特别优选不大于0.0010吸收/ cm 3的吸收/ cm 3的诱导吸收。 在用200万短的能量密度为30mJ / cm 2和2000Hz的ArF准分子激光器照射后立即在255nm处。 本发明还提供了一种用于光学光刻的光学元件，其包括单晶和用于包括单晶的真空紫外线透射的光学构件。

公开(公告)号：US20080213163A1

公开(公告)日：2008-09-04

申请号：US12034949

申请日：2008-02-21

申请人： Toshiro Mabuchi ,  Naoto Mochizuki ,  Teruhiko Nawata ,  Hiroki Sato ,  Tsuguo Fukuda

发明人： Toshiro Mabuchi ,  Naoto Mochizuki ,  Teruhiko Nawata ,  Hiroki Sato ,  Tsuguo Fukuda

IPC分类号： C01B9/08 ,  C30B11/00

CPC分类号： C30B29/12 ,  C30B15/00 ,  C30B33/02 ,  G02B1/02

摘要： Disclosed is a method for producing a BaLiF3 single crystal by a melt growth method, wherein a raw material melt for said single crystal comprising BaF2, LiF and MgF2 in such amounts that the Ba/(Ba+Li+Mg) ratio by mol is in the range of 0.35 to 0.48 and the Mg/(Li+Mg) ratio by mol is in the range of 0.001 to 0.03. In the case where a BaLiF3 single crystal that is useful as a last lens of immersion exposure tools for producing a semiconductor is produced by a melt growth method using, as a raw material, a melt containing excess Li, the Li component is liable to be precipitated to make the resulting BaLiF3 single crystal opaque, and the light transmittance is deteriorated, but such problems can be solved by the present invention.

摘要翻译： 公开了一种通过熔融生长法制备BaLiF 3 N 3单晶的方法，其中包含BaF 2 N，LiF和MgF 3的单晶的原料熔体， 2（Ba +（Ba + Li + Mg）的摩尔比在0.35〜0.48的范围内，Mg /（Li + Mg）的摩尔比在0.001〜0.03的范围内 。 在用作半导体制造用浸渍曝光工具的最后一个透镜的BaLiF 3 N 3单晶的熔融生长方法中，使用作为原料的含有过量的Li ，Li成分容易析出，使得BaLiF 3 N 3单晶不透明，透光率劣化，但是本发明可以解决上述问题。

公开(公告)号：US20130087739A1

公开(公告)日：2013-04-11

申请号：US13703713

申请日：2011-06-17

申请人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

发明人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

IPC分类号： G01T1/202

CPC分类号： G01T1/2023 ,  C09K11/54 ,  C09K11/55 ,  C09K11/623 ,  C30B7/10 ,  C30B29/16 ,  G01T1/003 ,  G01T1/202 ,  G21K4/00 ,  G21K2004/06

摘要： A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

摘要翻译： 闪烁体材料由生长在包含C面作为主面的氧化锌的板状晶种的+ C面或-C面的生长的氧化锌单晶构成。 氧化锌单晶含有In和Li。 响应于入射辐射，闪烁体材料发射小于20ps荧光寿命的荧光。

公开(公告)号：US20100104495A1

公开(公告)日：2010-04-29

申请号：US12444847

申请日：2007-10-10

申请人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

发明人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

IPC分类号： C30B9/00 ,  C01F11/20 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B7/10 ,  C30B29/406

摘要： A method for producing a nitride semiconductor, comprising controlling temperature and pressure in a autoclave containing a seed having a hexagonal crystal structure, a nitrogen element-containing solvent, a raw material substance containing a metal element of Group 13 of the Periodic Table, and a mineralizer so as to put said solvent into a supercritical state and/or a subcritical state and thereby ammonothermally grow a nitride semiconductor crystal on the surface of said seed, wherein the crystal growth rate in the m-axis direction on said seed is 1.5 times or more the crystal growth rate in the c-axis direction on said seed. By the method, a nitride semiconductor having a large-diameter C plane or a nitride semiconductor thick in the m-axis direction can be efficiently and simply produced.

摘要翻译： 一种氮化物半导体的制造方法，包括控制含有六方晶系结晶种子的高压釜中的温度和压力，含氮元素的溶剂，含有元素周期表第13族金属元素的原料物质，以及 使所述溶剂处于超临界状态和/或亚临界状态，从而在所述种子的表面上氨氮化物半导体晶体生长，其中所述种子上的m轴方向的晶体生长速率为1.5倍或 更多的是在所述种子上的c轴方向上的晶体生长速率。 通过该方法，可以有效且简单地制造具有大直径C面的氮化物半导体或在m轴方向上厚的氮化物半导体。

公开(公告)号：US20070018107A1

公开(公告)日：2007-01-25

申请号：US10569488

申请日：2004-08-25

申请人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga ,  Hikaru Koike

发明人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga ,  Hikaru Koike

IPC分类号： G01T1/20

CPC分类号： G01T1/2023 ,  A61B6/037 ,  A61B6/4258

摘要： A scintillator, characterized in that it comprises crystals of Pr1-xCexF3 [wherein 0

摘要翻译： 闪烁体，其特征在于其包含Pr 1-x Ce 3 F 3 [其中0

公开(公告)号：US5900054A

公开(公告)日：1999-05-04

申请号：US938265

申请日：1997-09-26

申请人： Hiroshi Takagi ,  Makoto Kumatoriya ,  Tsuguo Fukuda

发明人： Hiroshi Takagi ,  Makoto Kumatoriya ,  Tsuguo Fukuda

IPC分类号： C30B15/00 ,  C30B29/32 ,  H01L21/208 ,  C30B15/02

CPC分类号： C30B15/00 ,  C30B29/32

摘要： Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO.sub.2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO.sub.2 in a stoichiometrically excess amount, and/or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than about 2.times.10.sup.-1 atm.

摘要翻译： 提供具有Ca 3 Ga 2 Ge 4 O 14的晶体结构并且含有Ge作为构成元素的大尺寸的氧化物单晶及其制造方法。 氧化物单晶通过包括以下步骤的制造方法获得：制备包含GeO 2的起始材料的熔体并在所述单晶生长气氛中从所述原料熔体生长所述氧化物晶体，其特征在于，所述原料含有GeO 2 和/或所述单晶生长气氛是具有大于约2×10 -1 atm的氧分压的气体。

公开(公告)号：US4637854A

公开(公告)日：1987-01-20

申请号：US571091

申请日：1984-01-16

申请人： Tsuguo Fukuda ,  Kazutaka Terashima

发明人： Tsuguo Fukuda ,  Kazutaka Terashima

IPC分类号： C30B15/30 ,  C30B15/22 ,  C30B27/02

CPC分类号： C30B15/305 ,  Y10S117/917

摘要： A method for the production of a gallium arsenide single crystal which comprises bringing a seed crystal into contact with a fused layer of raw materials for the crystal while applying to the fused layer a magnetic field which has intensity enabling the temperature fluctuation in the neighborhood of the solid-liquid boundary in the fused layer to be repressed to within 1.degree. C., thereby effecting crystal growth.

摘要翻译： 一种砷化镓单晶的制造方法，其特征在于，使晶种与熔融原料的熔融层接触，同时向所述熔融层施加能够使所述晶体的附近的温度波动强度的磁场 将熔融层中的固 - 液界面压抑至1℃，从而进行晶体生长。

公开(公告)号：US4586979A

公开(公告)日：1986-05-06

申请号：US596705

申请日：1984-04-04

申请人： Tooru Katsumata ,  Kazutaka Terashima ,  Hiroaki Nakajima ,  Tsuguo Fukuda

发明人： Tooru Katsumata ,  Kazutaka Terashima ,  Hiroaki Nakajima ,  Tsuguo Fukuda

IPC分类号： C30B15/20 ,  C30B15/28 ,  C30B27/02

CPC分类号： C30B15/20 ,  C30B15/28

摘要： A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.

摘要翻译： 通过以下方法制造III-V族化合物半导体单晶，该方法包括基于在晶种和用于晶体的原料的熔融层之间流动的电流信号来调节用于晶体的原料的熔融层的温度 晶体的重量信号和晶体的长度信号，在晶体与熔融层的接触期间在晶体的肩部部分的形成期间以及在晶体的肩部部分期间 晶体形成的桶体分别在晶体生长过程中。

公开(公告)号：US4431476A

公开(公告)日：1984-02-14

申请号：US336701

申请日：1982-01-04

申请人： Masayuki Watanabe ,  Jisaburo Ushizawa ,  Tsuguo Fukuda

发明人： Masayuki Watanabe ,  Jisaburo Ushizawa ,  Tsuguo Fukuda

IPC分类号： C01B25/08 ,  C30B27/02

CPC分类号： C01B25/087 ,  C30B27/02 ,  C30B29/40

摘要： A gallium phosphide single crystal is prepared from a polycrystalline gallium phosphide powder as a starting raw material which is obtained by hydrogen reduction of gallium phosphate and which contains residual phosphate radicals in an amount of 0.03 to 0.5% by weight. The gallium phosphide powder is compressed to prepare a green compact which is then melted to provide a gallium phosphide liquid. The gallium phosphide liquid is brought into contact with a seed crystal and is pulled.

摘要翻译： 从作为原料的多晶磷化镓粉末制备磷化镓单晶，其通过氢氧化还原磷酸镓而得到，并含有0.03〜0.5重量％的残留磷酸根。 将磷化镓粉末压缩以制备生坯，然后将其熔化以提供磷化镓液体。 使磷化镓液体与晶种接触并被拉动。

公开(公告)号：US07608828B2

公开(公告)日：2009-10-27

申请号：US11578248

申请日：2005-04-12

申请人： Akira Yoshikawa ,  Kenji Aoki ,  Tomohiko Satonaga ,  Kei Kamada ,  Tsuguo Fukuda

发明人： Akira Yoshikawa ,  Kenji Aoki ,  Tomohiko Satonaga ,  Kei Kamada ,  Tsuguo Fukuda

IPC分类号： G01T1/20

CPC分类号： C09K11/7719 ,  C09K11/7772 ,  C30B29/12 ,  G21K4/00

摘要： A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (REyRE′1−y)F3 (0.0000

摘要翻译： 一种稀土氟化物固溶体材料（多晶体和/或单晶体），其特征在于，所述材料通过相互组合具有相变离子半径不同的多种稀土氟化物而得到，使得稀土氟化物固溶体 材料没有相变。 特征在于该材料由（REyRE'1-y）F3（0.0000