公开(公告)号：US07181972B2

公开(公告)日：2007-02-27

申请号：US11023202

申请日：2004-12-27

申请人： Samhita Dasgupta ,  Jeffrey Bernard Fortin ,  Steven Francis LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Alfred Tysoe

发明人： Samhita Dasgupta ,  Jeffrey Bernard Fortin ,  Steven Francis LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Alfred Tysoe

IPC分类号： G01L9/00

CPC分类号： G01H9/00 ,  G01L1/142 ,  G01L1/18 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/08 ,  G01L19/04

摘要： A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.

摘要翻译： 提供了根据本技术方面的传感器。 传感器包括由氮化镓形成的膜。 膜被布置在衬底上，其被湿蚀刻以形成闭合腔。 膜对外部刺激具有电容响应和压电响应。 传感器还包括用于测量电容响应或压电响应中的至少一个的电路。 在某些方面，传感器可操作以测量外部刺激，例如压力，力和机械振动。

公开(公告)号：US07053425B2

公开(公告)日：2006-05-30

申请号：US10706767

申请日：2003-11-12

申请人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

发明人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

IPC分类号： H01L31/312 ,  G01N27/12

CPC分类号： G01N27/4141 ,  G01N33/0037 ,  Y02A50/245

摘要： A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

摘要翻译： 一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

公开(公告)号：US08739604B2

公开(公告)日：2014-06-03

申请号：US11960781

申请日：2007-12-20

申请人： Kalaga Murali Krishna ,  Geetha Karavoor ,  John Patrick Lemmon ,  Jun Cui ,  Vinayak Tilak ,  Mohandas Nayak ,  Ravikumar Hanumantha

发明人： Kalaga Murali Krishna ,  Geetha Karavoor ,  John Patrick Lemmon ,  Jun Cui ,  Vinayak Tilak ,  Mohandas Nayak ,  Ravikumar Hanumantha

IPC分类号： G01N27/00

CPC分类号： G01N27/4162 ,  G01N27/125

摘要： A gas sensor is disclosed. The gas sensor includes a gas sensing layer, at least one electrode, an adhesion layer, and a response modification layer adjacent to said gas sensing layer and said layer of adhesion. A system having an exhaust system and a gas sensor is also disclosed. A method of fabricating the gas sensor is also disclosed.

摘要翻译： 公开了一种气体传感器。 气体传感器包括气体感测层，至少一个电极，粘附层和与所述气体感测层和所述粘合层相邻的响应修饰层。 还公开了一种具有排气系统和气体传感器的系统。 还公开了一种制造气体传感器的方法。

公开(公告)号：US20130105816A1

公开(公告)日：2013-05-02

申请号：US13281638

申请日：2011-10-26

申请人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

发明人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC分类号： H01L29/16 ,  H01L21/56 ,  H01L29/12

CPC分类号： H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

公开(公告)号：US07547953B2

公开(公告)日：2009-06-16

申请号：US11699530

申请日：2007-01-29

申请人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

发明人： Anthony Yu-Chung Ku ,  Steven Alfred Tysoe ,  Vinayak Tilak ,  Peter Micah Sandvik ,  Sergio Paulo Martins Loureiro ,  James Anthony Ruud ,  Anis Zribi ,  Wei-Cheng Tian

IPC分类号： H01L27/14

CPC分类号： G01N27/125

摘要： Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.

摘要翻译： 用于感测气体的氧化镓膜包括Ga 2 O 3并且具有至少约30％的孔隙率。 可以通过用包含镓盐和致孔剂的溶液涂覆基底来形成这种膜，所述成盐剂包含包含亲水链和疏水链的有机化合物; 并将衬底加热至约400℃至约600℃的温度，同时将衬底暴露于含氧源以将镓盐转化为氧化镓。

公开(公告)号：US07313965B2

公开(公告)日：2008-01-01

申请号：US11509397

申请日：2006-08-25

申请人： Vinayak Tilak ,  Jie Jiang ,  David Mulford Shaddock ,  Stacey Joy Kennerly ,  David Richard Esler ,  Aaron Jay Knobloch

发明人： Vinayak Tilak ,  Jie Jiang ,  David Mulford Shaddock ,  Stacey Joy Kennerly ,  David Richard Esler ,  Aaron Jay Knobloch

IPC分类号： G01L9/00

CPC分类号： G01H9/00 ,  G01L1/044 ,  G01L1/148 ,  G01L1/16 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/085 ,  G01L19/0681

摘要： A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.

摘要翻译： 一种包括电介质层的高温压力传感器。 压力传感器还包括能够耐受大于450℃的温度而不进入相变的衬底，沉积在蓝宝石衬底上的至少一种半导体材料和沉积在半导体材料上的二氧化硅层。 压力传感器的一个方面包括第二半导体材料。

公开(公告)号：US20060137456A1

公开(公告)日：2006-06-29

申请号：US11023202

申请日：2004-12-27

申请人： Samhita Dasgupta ,  Jeffrey Fortin ,  Steven LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Tysoe

发明人： Samhita Dasgupta ,  Jeffrey Fortin ,  Steven LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Tysoe

IPC分类号： G01L9/00

CPC分类号： G01H9/00 ,  G01L1/142 ,  G01L1/18 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/08 ,  G01L19/04

摘要： A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.

摘要翻译： 提供了根据本技术方面的传感器。 传感器包括由氮化镓形成的膜。 膜被布置在衬底上，其被湿蚀刻以形成闭合腔。 膜对外部刺激具有电容响应和压电响应。 传感器还包括用于测量电容响应或压电响应中的至少一个的电路。 在某些方面，传感器可操作以测量外部刺激，例如压力，力和机械振动。

公开(公告)号：US09041384B2

公开(公告)日：2015-05-26

申请号：US13069509

申请日：2011-03-23

申请人： Lam Arthur Campbell ,  Vinayak Tilak

发明人： Lam Arthur Campbell ,  Vinayak Tilak

IPC分类号： G01R1/04 ,  G01D11/24

CPC分类号： G01D11/245 ,  Y10T29/49002

摘要： A sensor assembly includes an outer housing and at least one high-impedance sensing device positioned within the outer housing. The sensor assembly also includes a buffering circuit having at least one wide bandgap semiconductor device positioned within the outer housing. The buffering circuit is operatively coupled to the at least one high-impedance sensing device.

摘要翻译： 传感器组件包括外壳和位于外壳内的至少一个高阻抗感测装置。 传感器组件还包括缓冲电路，其具有定位在外壳内的至少一个宽带隙半导体器件。 缓冲电路可操作地耦合到至少一个高阻抗感测装置。

公开(公告)号：US08530902B2

公开(公告)日：2013-09-10

申请号：US13281638

申请日：2011-10-26

申请人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

发明人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC分类号： H01L29/15

CPC分类号： H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

摘要翻译： 提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。 TVS组件包括台面结构中的半导体管芯，其包括具有第一极性的导电率的第一宽带隙半导体的第一层，具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触，其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一，第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层，具有第二极性的导电性的层被轻掺杂。

公开(公告)号：US20120253747A1

公开(公告)日：2012-10-04

申请号：US13077598

申请日：2011-03-31

申请人： Ertugrul Berkcan ,  Emad Andarawis Andarawis ,  Vinayak Tilak

发明人： Ertugrul Berkcan ,  Emad Andarawis Andarawis ,  Vinayak Tilak

IPC分类号： G06F15/00

CPC分类号： G01D21/00

摘要： A high accuracy wireless sensing platform assembly comprising a sensor subassembly that is configured to obtain measurement data from a device in response to a measurand; a data transceiver assembly that is configured to communicate with an antenna assembly; a parameter coder, in communication with the sensor subassembly, that is configured to control the data transceiver assembly and/or the sensor subassembly, based on the measurement data; and a resonant circuit that is formed by the data transceiver, the sensor subassembly, and/or the parameter coder. Embodiments are capable of provide robust performance and high accuracy in harsh (e.g., hot environments). The present invention has been described in terms of specific embodiment(s), and it is recognized that equivalents, alternatives, and modifications, aside from those expressly stated, are possible and within the scope of the appending claims.

摘要翻译： 一种高精度无线感测平台组件，包括传感器子组件，其被配置为响应于被测量从设备获得测量数据; 数据收发器组件，被配置为与天线组件通信; 与所述传感器子组件通信的参数编码器，其被配置为基于所述测量数据来控制所述数据收发器组件和/或所述传感器子组件; 以及由数据收发器，传感器子组件和/或参数编码器形成的谐振电路。 实施例能够在苛刻（例如，热环境）中提供鲁棒的性能和高精度。 已经根据具体实施例描述了本发明，并且认识到除了明确说明的那些之外的等同物，替代方案和修改是可能的并且在所附权利要求的范围内。