Abstract:
A tunable apparatus for performing Surface Enhanced Raman Spectroscopy (SERS) includes a deformable layer and a plurality of SERS-active nanoparticles disposed at one or more locations on the deformable layer, wherein the one or more locations are configured to be illuminated with light of a pump wavelength to cause Raman excitation light to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles. In addition, a morphology of the deformable layer is configured to be controllably varied to modify an intensity of the Raman scattered light produced from the molecules.
Abstract:
A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
Abstract:
Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device (400) includes an active region (402) for controlling the flow of charge carriers between a first electrode (104) and a second electrode (106). The active region is disposed between the first electrode and the second electrode and includes a storage material. Excess mobile oxygen ions formed within the active region are stored in the storage material by applying a first voltage.
Abstract:
A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.
Abstract:
Embodiments of the present invention provide a method of forming an electrical connection on a device. In one embodiment, the electrical connection is attached to the device via an adhesive having electrically conductive particles disposed therein. In one embodiment, the adhesive is cured while applying pressure such that the conductive particles align, have a reduced particle-to-particle spacing, or come into contact with each other to provide a more directly conductive (less resistive) path between the electrical connection and the device. In one embodiment of the present invention, a method for forming an electrical lead on a partially formed solar cell during formation of the solar cell device is provided. The method comprises placing a side-buss wire onto a pattern of electrically conductive adhesive disposed on a back contact layer of a solar cell device substrate, laminating the side-buss wire and electrically conductive adhesive between the solar cell device substrate and a back glass substrate to form a composite solar cell structure, and curing the electrically conductive adhesive while applying pressure and heat to the composite solar cell structure.
Abstract:
An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.
Abstract:
An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.
Abstract:
Raman-enhancing structures include a layer of dielectric material, a superlens configured to focus electromagnetic radiation having a wavelength greater than about 100 nanometers to a two-dimensional focal area having linear dimensions less than about 100 nanometers on a surface of the layer of dielectric material, and at least two nanoparticles comprising a Raman-enhancing material disposed proximate the focal area. Additional Raman-enhancing structures include a layer of dielectric material, a layer of conductive material, and at least two nanoparticles comprising a Raman-enhancing material disposed on a second, opposite surface of the layer of dielectric material. The layer of conductive material has a plurality of apertures therethrough that are arranged in a two-dimensional array. Methods for conducting Raman spectroscopy are performed using such structures and systems.
Abstract:
Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
Abstract:
Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.