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公开(公告)号:US20240412759A1
公开(公告)日:2024-12-12
申请号:US18229772
申请日:2023-08-03
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Son T. LE , Hisashi TAKANO
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer. The SOT device comprises a seed layer and a BiSb layer having a (012) orientation. The seed layer comprises at least one of an amorphous/nanocrystalline material with a nearest neighbor x-ray diffraction peak with a d-spacing in the range of about 2.02 Å to about 2.20 Å; a polycrystalline material having a (111) orientation and an a-axis of about 3.53 Å to about 3.81 Å; and a polycrystalline material having a cubic (100) or tetragonal (001) orientation and an a-axis of about 4.1 Å to about 4.7 Å. When the seed layer comprises an amorphous material or a polycrystalline material having a (111), the BiSb layer is doped, and the seed layer has a lower a/c ratio than when the seed layer comprises polycrystalline material having a cubic (100) or tetragonal (001) orientation.
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公开(公告)号:US20240112840A1
公开(公告)日:2024-04-04
申请号:US17956786
申请日:2022-09-29
Applicant: Western Digital Technologies, Inc.
Inventor: Susumu OKAMURA , Quang LE , Brian R. YORK , Cherngye HWANG , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC classification number: H01F10/329 , C22C19/07 , G11B5/39 , H01L27/222 , H01L43/04 , H01L43/06 , H01L43/10 , G11B2005/0024
Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.
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公开(公告)号:US20230197132A1
公开(公告)日:2023-06-22
申请号:US17854568
申请日:2022-06-30
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Cherngye HWANG , Brian R. YORK , Randy G. SIMMONS , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO , Michael A. GRIBELYUK , Xiaoyu XU
CPC classification number: G11C11/161 , G11C11/1675 , G11C11/1673 , H01L43/08 , H01L43/10 , H01L43/04 , H01L43/14 , H01L43/06 , H01L27/222
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
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公开(公告)号:US20230027086A1
公开(公告)日:2023-01-26
申请号:US17954679
申请日:2022-09-28
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Cherngye HWANG , Brian R. YORK , Andrew CHEN , Thao A. NGUYEN , Yongchul AHN , Xiaoyong LIU , Hongquan JIANG , Zheng GAO , Kuok San HO
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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公开(公告)号:US20210336127A1
公开(公告)日:2021-10-28
申请号:US16861118
申请日:2020-04-28
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Cherngye HWANG , Brian R. YORK , Andrew CHEN , Thao A. NGUYEN , Yongchul AHN , Xiaoyong LIU , Hongquan JIANG , Zheng GAO , Kuok San HO
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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公开(公告)号:US20200372929A1
公开(公告)日:2020-11-26
申请号:US16991971
申请日:2020-08-12
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Yongchul AHN , Susumu OKAMURA , Zheng GAO , Alexander GONCHAROV , Muhammad ASIF BASHIR , Petrus Antonius VAN DER HEIJDEN , James Mac FREITAG
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.
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公开(公告)号:US20200327899A1
公开(公告)日:2020-10-15
申请号:US16912572
申请日:2020-06-25
Applicant: Western Digital Technologies, Inc.
Inventor: Suping SONG , Zhanjie LI , Michael Kuok San HO , Quang LE , Alexander M. ZELTSER
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.
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公开(公告)号:US20190259413A1
公开(公告)日:2019-08-22
申请号:US16276508
申请日:2019-02-14
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Hongquan JIANG , Ning SHI , Alexander M. ZELTSER
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, a MAMR stack disposed between the trailing shield and the main pole, side shields surrounding at least a portion of the main pole, and a structure disposed between the side shields and the main pole at a media facing surface (WS). The structure is fabricated from a material that is thermally conductive and electrically insulating/dissipative. The material has a thermal conductivity of at least 50 W/(m*K) and an electrical resistivity of at least 105 Ω*m. The structure helps dissipate joule heating generated from either the main pole or the MAMR stack into surrounding area without electrical shunting, leading to reduced heating or break-down induced failures.
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公开(公告)号:US20250054671A1
公开(公告)日:2025-02-13
申请号:US18933330
申请日:2024-10-31
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
IPC: H01F10/32 , C23C8/12 , C30B29/52 , G11B5/00 , G11B5/39 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/01 , H10N52/80
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
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公开(公告)号:US20250014618A1
公开(公告)日:2025-01-09
申请号:US18889747
申请日:2024-09-19
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Cherngye HWANG , Brian R. YORK , Randy G. SIMMONS , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO , Michael A. GRIBELYUK , Xiaoyu XU
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
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