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31.发明授权
公开(公告)号：US4464458A
公开(公告)日：1984-08-07
申请号：US454766
申请日：1982-12-30
CPC分类号： G03F7/094 , G03F7/0226
摘要： A resist system for semiconductor device fabrication comprised of bottom positive resist layer of a diazoquinone/novolak resist applied to a substrate and overcoated with a like or different diazoquinone/novolak top resist layer which has been sensitized with pyrene and/or its derivatives.
摘要翻译： 一种用于半导体器件制造的抗蚀剂系统，其由施加到基底上的重氮醌/酚醛清漆抗蚀剂的底部正性抗蚀剂层组成，并用与芘和/或其衍生物敏化的类似或不同的重氮醌/酚醛清漆顶部抗蚀剂层外涂。
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32.发明授权Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists 失效使用含有10.5〜12％氮的硝化纤维作为电子束正抗蚀剂
公开(公告)号：US3985915A
公开(公告)日：1976-10-12
申请号：US534542
申请日：1974-12-20
CPC分类号： G03F7/039 , Y10S430/143
摘要： Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.
摘要翻译： 使用含有10.5〜12％氮的硝酸纤维素薄膜得到非常敏感的电子束正性抗蚀剂。
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公开(公告)号：US3931435A
公开(公告)日：1976-01-06
申请号：US534541
申请日：1974-12-20
IPC分类号： H05K3/00 , G03F7/039 , H01L21/027 , B05D3/06
CPC分类号： G03F7/039 , Y10S430/143
摘要： Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.
摘要翻译： 使用含有乙酸酯聚合物的聚合甲基丙烯酸甲酯薄膜已经获得非常敏感的电子束正性抗蚀剂。
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34.发明授权Apparatus and method for the rapid thermal control of a work piece in liquid or supercritical fluid 失效用于在液体或超临界流体中快速热控制工件的装置和方法公开(公告)号：US08388758B2
公开(公告)日：2013-03-05
申请号：US11866255
申请日：2007-10-02
申请人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
发明人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
IPC分类号： B08B7/00
CPC分类号： H01L21/02101 , B08B7/0021 , H01L21/67109 , H01L21/67248 , Y10S134/902
摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.
摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。
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35.发明授权Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates 有权使用混合的底物来增强镀铬或敏感衬底上的抗蚀剂图案公开(公告)号：US07960095B2
公开(公告)日：2011-06-14
申请号：US10597904
申请日：2004-02-11
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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36.发明授权Etch improved resist systems containing acrylate (or methacrylate) silane monomers 有权蚀刻改进的含有丙烯酸酯（或甲基丙烯酸酯）硅烷单体的抗蚀剂体系公开(公告)号：US06586156B2
公开(公告)日：2003-07-01
申请号：US09907392
申请日：2001-07-17
申请人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
发明人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要翻译： 一种化学放大（CA）光刻胶体系，其中提供含有缩酮/酚/硅基侧链的三元共聚物。 除其他外，三元共聚物可提供改进的烘烤技术。 在另一方面，提供了通过缩酮/酚/硅基组合物对基材进行光刻处理的方法和用于制备物体，特别是电子部件的相应方法。
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公开(公告)号：US06509136B1
公开(公告)日：2003-01-21
申请号：US09893267
申请日：2001-06-27
申请人： Dario L. Goldfarb , Kenneth John McCullough , David R. Medeiros , Wayne M. Moreau , John P. Simons , Charles J. Taft
发明人： Dario L. Goldfarb , Kenneth John McCullough , David R. Medeiros , Wayne M. Moreau , John P. Simons , Charles J. Taft
IPC分类号： G03F7027
CPC分类号： F26B21/14 , F26B5/005 , G03F7/162 , G03F7/168 , Y10S430/136
摘要： A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.
摘要翻译： 干燥设置在工件上的流延膜聚合物的方法。 在该方法中，设置在工件上的包含其中的挥发性有机化合物的浇铸聚合物膜与可以是液体二氧化碳或超临界二氧化碳的萃取剂接触。
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公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译： 本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。 本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。 本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.
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公开(公告)号：US06383712B1
公开(公告)日：2002-05-07
申请号：US09092596
申请日：1998-06-05
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/039 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.
摘要翻译： 公开了用于制造半导体器件如集成电路结构的光刻工艺中的光致抗蚀剂组合物。 光致抗蚀剂组合物包括与碱溶性长链聚合物结合的单体敏化剂。
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40.发明授权Photo acid generator compounds, photo resists, and method for improving bias 失效照片酸发生剂化合物，光致抗蚀剂和改善偏压的方法
公开(公告)号：US6074800A
公开(公告)日：2000-06-13
申请号：US64955
申请日：1998-04-23
申请人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
发明人： Gregory Breyta , Phillip J. Brock , Daniel J. Dawson , Ronald A. DellaGuardia , Charlotte R. DeWan , Andrew R. Eckert , Hiroshi Ito , Premlatha Jagannathan , Leo L. Linehan , Kathleen H. Martinek , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/115
摘要： Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.
摘要翻译： 提供了几个中等紫外光酸产生剂（PAG），化学放大光抗蚀剂（CAMP）和改进嵌套到隔离线偏压的方法。 类似地，也可以提高照相速度。 与传统的中等紫外线PAG不同，本发明的PAG化合物，抗蚀剂组合物和方法不需要中等紫外线敏化剂。 具体地说，提供了能够承受中等紫外线辐射，特别是I线的发色团的PAG，并且适合用于光速为500mJ / cm 2以下但优选为200mJ / cm 2的化学放大型光致抗蚀剂的PAG， cm2以下。 例如，PAG可以是锍或碘鎓盐，例如蒽基，丁基，甲基锍三氟甲磺酸酯和双（4-叔丁基苯基）碘9,10-二甲氧基蒽磺酸盐。 形成PAG的一部分的发色团可以选自多芳族烃，例如氯仿，芘，荧蒽，蒽，二苯甲酮，噻吨酮，蒽和菲，但优选为蒽。
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