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31.发明授权Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition 有权通过气相沉积在铜和钌区域的基板上选择性沉积铜薄膜的工艺公开(公告)号：US08283485B2
公开(公告)日：2012-10-09
申请号：US12139585
申请日：2008-06-16
IPC分类号： H01L21/443
CPC分类号： H01L21/28556 , C23C16/04 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76877
摘要： A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.
摘要翻译： 本文描述了制备多层基底的方法。 在一个实施例中，该方法提供了包括第一层和第二层的多层衬底，其中该方法包括提供包括阻挡区域和铜区域的第一层的步骤; 以及将包含铜的所述第二层沉积到所述第一层上，其中所述沉积提供所述第二层，所述第二层包括从所述阻挡区域上的约20埃到约2000埃的第一厚度，以及从约0埃到约1,000埃的第二厚度 第一层中的铜区域，其中第一厚度大于第二厚度。
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公开(公告)号：US08143431B2
公开(公告)日：2012-03-27
申请号：US12126333
申请日：2008-05-23
CPC分类号： H05K3/105 , C09D11/30 , H05K3/125 , H05K2203/013 , H05K2203/1105 , H05K2203/121
摘要： Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at
摘要翻译： 公开了新的烷基酚化合物基油墨配方及其化学合成。 还公开了使用油墨配方在<150℃下用标准喷墨印刷和固化印刷导电铜金属线的方法。
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33.发明授权Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效用于沉积多组分含金属材料的液体前体混合物公开(公告)号：US06503561B1
公开(公告)日：2003-01-07
申请号：US09546452
申请日：2000-04-10
IPC分类号： C23C1618
CPC分类号： C23C18/1225 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1216 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译： 本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自 由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。 本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物， 其中配体相同并且选自烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基，吡唑及其氟，氧和氮取代的类似物; b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。
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公开(公告)号：US08263795B2
公开(公告)日：2012-09-11
申请号：US12258996
申请日：2008-10-27
CPC分类号： H01L21/28562 , C07F7/1804 , C23C16/18 , H01L21/28556
摘要： Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译： 本文描述了非氟化铜前体及其制备和使用方法。 在某些实施方案中，本文所述的铜前体可用作通过例如原子层沉积或化学气相沉积条件将铜膜及其合金沉积在衬底上的前体。
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公开(公告)号：US20090114874A1
公开(公告)日：2009-05-07
申请号：US12258996
申请日：2008-10-27
CPC分类号： H01L21/28562 , C07F7/1804 , C23C16/18 , H01L21/28556
摘要： Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译： 本文描述了非氟化铜前体及其制备和使用方法。 在某些实施方案中，本文所述的铜前体可用作通过例如原子层沉积或化学气相沉积条件将铜膜及其合金沉积在衬底上的前体。
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36.发明授权Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes 失效扩散阻挡层和通过CVD或ALD工艺沉积金属膜的方法公开(公告)号：US07524533B2
公开(公告)日：2009-04-28
申请号：US10820864
申请日：2004-04-09
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the surface of the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层的表面可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，含硅，碳和氮的化合物及其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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公开(公告)号：US20080305268A1
公开(公告)日：2008-12-11
申请号：US12126333
申请日：2008-05-23
CPC分类号： H05K3/105 , C09D11/30 , H05K3/125 , H05K2203/013 , H05K2203/1105 , H05K2203/121
摘要： Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at
摘要翻译： 公开了新的烷基酚化合物基油墨配方及其化学合成。 还公开了使用油墨配方在<150℃下用标准喷墨印刷和固化印刷导电铜金属线的方法。
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38.发明授权Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants 有权使用致孔剂和/或孔隙化前体来提供具有低介电常数的多孔有机硅玻璃膜的方法公开(公告)号：US06846515B2
公开(公告)日：2005-01-25
申请号：US10150798
申请日：2002-05-17
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C23C16/40
CPC分类号： C23C16/401
摘要： A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.
摘要翻译： 一种提供由式SivOwCxHyFz，v + w + x + y + z = 100％表示的材料的单相组成的多孔有机硅玻璃（OSG）膜的方法，v为10〜35原子％，w 为10〜65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中膜的孔隙和介电常数小于2.6 。 在本发明的一个方面中，通过化学气相沉积方法提供膜，其中从有机硅烷和/或有机硅氧烷前体和成孔剂（孔隙原）沉积预备膜，其可以独立于或替代地键合 前体。 随后除去致孔剂以提供多孔膜。 在本发明的另一方面，使用致孔前体来提供该膜。
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39.发明授权Process for metal metalloid oxides and nitrides with compositional gradients 失效具有组成梯度的金属准金属氧化物和氮化物的工艺公开(公告)号：US06537613B1
公开(公告)日：2003-03-25
申请号：US09546867
申请日：2000-04-10
IPC分类号： C23C1606
CPC分类号： C23C16/52 , C23C16/029
摘要： A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.
摘要翻译： 一种用于在电子材料的基底上的层中沉积具有金属和准金属的组成梯度的多金属和准金属化合物层的方法，包括：a）提供两种或更多种金属 - 配体和准金属 - 配体复合物前体， 其中配体优选相同; b）将前体输送到基底所在的沉积区; c）在沉积条件下将基材与前体接触; d）在接触期间将沉积温度从第一温度变化到与所述第一温度至少40℃的第二不同温度，以及e）从所述前体沉积多个金属和准金属化合物层到所述衬底上， 在层中的金属和准金属的组成梯度中作为步骤d）的结果。 可以加入氧源以产生金属 - 类金属氧化物，或者可以加入氮源以产生金属 - 准金属氮化物，或者可以加入氧和氮源的混合物以产生金属 - 准金属氧氮化物 准金属将优选为硅。
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公开(公告)号：US06319567B1
公开(公告)日：2001-11-20
申请号：US09281616
申请日：1999-03-30
IPC分类号： C23C1634
CPC分类号： C23C16/4481 , C23C16/34
摘要： A method for producing a tantalum nitride layer on a substrate, comprising; directly injecting a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta[&eegr;2—R6N═C (R7)(R8)] into a dispersing zone followed by delivering the dispersed mixture into a reactor containing the substrate at elevated temperature and reacting the mixture with a source of nitrogen selected from the group consisting of ammonia, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce the tantalum nitride layer on the substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen.
摘要翻译： 一种在基板上制造氮化钽层的方法，包括： 将（R1R2N）3Ta（= NR3）和（R4R5N）3Ta-R6N = C（R7）（R8）]的液体混合物直接注入到分散区中，然后将分散的混合物输送到含有底物的反应器中， 温度并使混合物与选自氨，烷基胺，N 2 H 2，烷基肼，N 2及其混合物的氮源反应，以在衬底上产生氮化钽层，其中R1，R2，R3，R4， R 5，R 6，R 7和R 8分别是C 1-6烷基，芳基或氢。
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